AO4830 v ds (v) = 80 v i d = 3.5a (v gs = 10v) (v gs = 10v) symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 48 62.5 74 90 r q jl 32 40 a repetitive avalanche energy l=0.1mh c 12.8 mj avalanche current c 16 pulsed drain current c continuous drain current t a =25c t a =70c junction and storage temperature range -55 to 150 c thermal characteristics t 10s c/w parameter r q ja units maximum junction-to-ambient a v v 30 gate-source voltage drain-source voltage 80 maximum units parameter absolute maximum ratings t a =25c unless otherwise noted the AO4830 uses advanced trench technology to provide excellent r ds(on) and low gate charge . this device is suitable for use as a load switch or in p wm applications. r ds(on) < 75m w a i d 3.5 2.9 18 power dissipation b p d w 2 t a =25c 1.3 t a =70c maximum junction-to-lead steady-state c/w steady-state c/w maximum junction-to-ambient a d g2 d2 s2 g1 d1 s1 g1 s1 g2 s2 d1 d1 d2 d2 top view soic-8 www.freescale.net.cn 1/6 80v dual n-channel mosfet general description features
symbol min typ max units bv dss 80 v v ds =80v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 3.5 4.2 5 v i d(on) 18 a 62 75 t j =125c 113.0 135 g fs 15 s v sd 0.77 1 v i s 2.5 a i sm 18 a c iss 510 640 770 pf c oss 28 40 52 pf c rss 12 20 30 pf r g 0.9 1.8 2.7 w q g (10v) 8 11 13 nc q g (4.5v) 4 5.5 7 q gs 4 5 6 nc q gd 0.7 1.2 1.7 nc t d(on) 7.2 ns t r 2.2 ns t d(off) 17 ns t f 2 ns t rr 14 20 26 ns q rr 35 50 65 nc body diode reverse recovery charge i f =3.5a, di/dt=300a/ m s pulsed body-diode current c input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =40v, r l =8 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =40v, i d =3.5a gate source charge gate drain charge total gate charge switching parameters m w i s =1a,v gs =0v v ds =5v, i d =3.5a forward transconductance diode forward voltage r ds(on) static drain-source on-resistance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 30v zero gate voltage drain current gate-body leakage current maximum body-diode continuous current body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =3.5a reverse transfer capacitance i f =3.5a, di/dt=300a/ m s v gs =0v, v ds =40v, f=1mhz a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with www.freescale.net.cn 2/6 AO4830 80v dual n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 4 8 12 16 20 3 4 5 6 7 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 50 60 70 80 90 100 0 4 8 12 16 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =10v i d =3.5a 50 70 90 110 130 150 4 8 12 16 20 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =10v i d =3.5a 25c 125c 0 4 8 12 16 20 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) 6v 7v 10v 5.5v 5v www.freescale.net.cn 3/6 AO4830 80v dual n-channel mosfet
typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 10 12 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 0 20 40 60 80 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =40v i d =3.5a 0.0 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to-am bient (note f) power (w) t a =25c 10ms 100ms 1 10 100 0.000001 0.00001 0.0001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 10ms 100m t a =25c t a =150c t a =100c t a =125c www.freescale.net.cn 4/6 AO4830 80v dual n-channel mosfet
typical electrical and thermal characteristics 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q q q q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =90c/w www.freescale.net.cn 5/6 AO4830 80v dual n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 6/6 AO4830 80v dual n-channel mosfet
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