a d v a n c e d s e m i c o n d u c t o r, i n c. rev. b 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 o c symbol none test conditions minimum typical maximum units bv cbo i c = 10 ma 60 v bv ceo i c = 50 ma 30 v bv ebo i e = 4.0 ma 4.0 v i cbo v cb = 30 v 4.0 ma h fe v ce = 25 v i c = 500 ma 15 120 --- c ob v cb = 28 v f = 1.0 mhz 10 pf p g imd 1 v ce = 25 v i c = 410 ma f = 860 mhz p out = 2.0 w 10 -60 db dbc npn silicon rf power transistor blv30 description: the asi blv30 is designed for television band iv & v applications up to 860 mhz. features: ? common emitter ? p g = 10 db at 2.0 w/860 mhz ? omnigold ? metalization system maximum ratings i c 1.5 a v cbo 60 v v ceo 30 v v ebo 4.0 v p diss 15.9 w @ t c = 25 o c t j -65 o c to +200 o c t stg -65 o c to +150 o c jc 10 o c/w package style .280 4l stud minimum inches / mm .003 / 0.08 .270 / 6.86 .117 / 2.97 b c d e f g a maximum .285 / 7.24 .137 / 3.48 .007 / 0.18 inches / mm h .245 / 6.22 .255 / 6.48 dim 1.010 / 25.65 1.055 / 26.80 i j .217 / 5.51 .220 / 5.59 k .175 / 4.45 .285 / 7.24 .275 / 6.99 .572 / 14.53 .640 / 16.26 .130 / 3.30 .230 /5.84 g k h f e d c b 45 a #8-32 unc i j e e c b
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