? mitsubishi igbt modules ? ? ? CM600DU-12NFH ? high power switching use ? insulated type ? 1 february-2011 ? CM600DU-12NFH - 5 th generation fast switching igbt module - collector current i c ......... ....?............? 600 a collector-emitter voltage v ces ...........? 600 v maximum junction temperature t jmax ... 150 c flat base type copper base plate rohs directive compliant ul recognized under ul1557, file e323585 dual (half-bridge) application high freqency (30 khz ~ 60 khz) switching use: gradient anplifier, induction heat ing, power supply, etc. outline drawing & internal connection dimension in mm ? internal connection ? tolerance otherwise specified ? division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1.2 g1 e1 e2 g2 di1 di2 tr1 tr2 c1 c2e1 e2 ?
mitsubishi igbt modules CM600DU-12NFH high power switching use ? insulated type ? 2 february-2011 absolute maximum ratings (t j =25 c, unless otherwise specified) symbol item conditions rating unit v ces collector-emitter voltage g-e short-circuited 600 v v ges gate-emitter voltage c-e short-circuited 20 v i c 600 i c(rms) operation (note.5) 400 i crm collector current pulse, repetitive (note.4) 1200 a p tot t c =25 c (note.2, 5) 1130 p tot ' total power dissipation t c '=25 c (note.3, 5) 2350 w i e (note.1) 600 i e(rms) (note.1) operation (note.5) 400 i erm (note.1) emitter current (free wheeling diode forward current) pulse, repetitive (note.4) 1200 a t j junction temperature - -40 ~ +150 t stg storage temperature - -40 ~ +125 c v isol isolation voltage terminals to base pl ate, rms, f=60 hz, ac 1 min 2500 v electrical characteristics (t j =25 c, unless otherwise specified) limits symbol item conditions min. typ. max. unit i ces collector-emitter cut-off current v ce =v ces , g-e short-circuited - - 1 ma i ges gate-emitter leakage current v ge =v ges , c-e short-circuited - - 0.5 a v ge(th) gate-emitter threshold voltage i c =60 ma, v ce =10 v 5 6 7 v i c =600 a (note.6) , t j =25 c - 2.0 2.7 v cesat collector-emitter saturation voltage v ge =15 v t j =125 c - 1.95 - v c ies input capacitance - - 166 c oes output capacitance - - 11 c res reverse transfer capacitance v ce =10 v, g-e short-circuited - - 6.0 nf q g gate charge v cc =300 v, i c =600 a, v ge =15 v - 3720 - nc t d(on) turn-on delay time - - 650 t r rise time v cc =300 v, i c =600 a, v ge =15 v, - - 250 t d(off) turn-off delay time - - 800 t f fall time r g =2.0 ? , inductive load - - 150 ns v ec (note.1) emitter-collector voltage i e =600 a (note.6) , g-e short-circuited - 2.0 2.6 v t rr (note.1) reverse recovery time v cc =300 v, i e =600 a, v ge =15 v, - - 200 ns q rr (note.1) reverse recovery charge r g =2.0 ? , inductive load - 11 - c e on turn-on switching energy per pulse v cc =300 v, i c =i e =600 a, - 11 - e off turn-off switching energy per pulse v ge =15 v, r g =2.0 ? , t j =125 c, - 27 - e rr (note.1) reverse recovery energy per pulse inductive load - 6.3 - mj r g internal gate resistance per switch, t c =25 c - 0.8 - ? thermal resistance characteristics limits symbol item conditions min. typ. max. unit r th(j-c)q junction to case, per igbt - - 0.11 k/w r th(j-c)d thermal resistance (note.2) junction to case, per fwdi - - 0.12 k/w r th(c-s) contact thermal resistance (note.2) case to heat sink, per 1/2 module, thermal grease applied (note.7) - 0.02 - k/w r th(j-c')q junction to case, per igbt - - 53 k/kw r th(j-c')d thermal resistance (note.3) junction to case, per fwdi - - 78 k/kw mechanical characteristics limits symbol item conditions min. typ. max. unit m t main terminals m 6 screw 3.5 4.0 4.5 m s mounting torque mounting to heat sink m 6 screw 3.5 4.0 4.5 nm m weight - - 580 - g e c flatness of base plate on the centerline x, y (note.8) -100 - +100 m
mitsubishi igbt modules CM600DU-12NFH high power switching use ? insulated type ? 3 february-2011 recommended operating conditions (t a =25 c) limits symbol item conditions min. typ. max. unit v cc (dc) supply voltage applied across c1-e2 - 300 400 v geon gate (-emitter drive) voltage applied across g1-es1/g2-es2 13.5 15.0 16.5 v r g external gate resistance per switch 1.0 - 10 ? note.1: represent ratings and characteristics of the ant i-parallel, emitter-collector free wheeling diode (fwdi). note.2: case temperature (t c ) measured point is base plate side. (ref er to the figure of chip location) note.3: case temperature (t c ' ) and heat sink temperature (t s ') are defined on the each surfac e of base plate and heat sink just under the chips. (refer to the figure of chip location) the heat sink thermal resistance {r th(s-a) } should measure just under the chips. note.4: pulse width and repetition rate should be such that the device junction temperature (t j ) dose not exceed t jmax rating. note.5: junction temperature (t j ) should not increase beyond t jmax rating. note.6: pulse width and repetition rate should be su ch as to cause negligible temperature rise. (refer to the figure of test circuit) note.7: typical value is measured by using thermally conductive grease of =0.9 w/(mk). note.8: base plate flatness measurement points are as in the following figure. y x +:convex -:concave 3 mm +:convex -:concave bottom bottom bottom note.9: no short circuit capability is designed. chip location (top view) dimension in mm, tolerance: 1 mm case temperature (t c ) measurement point (base plate side) ? tr1/tr2: igbt, di1/di2: fwdi
mitsubishi igbt modules CM600DU-12NFH high power switching use ? insulated type ? 4 february-2011 test circuit and waveforms v ge =15 v v i c c1 c2e1 e2 es2 g2 es1 g1 short- circuited v ge =15 v i c c1 c2e1 e2 es2 g2 es1 g1 v short - circuited v i e c1 c2e1 e2 es2 g2 es1 g1 short- circuited short - circuited i e c1 c2e1 e2 es2 g2 es1 g1 v short - circuited short - circuited tr1 tr2 di1 di2 v cesat test circuit v ec test circuit ? t t f t r t d(on) i c 10% 90 % 90 % v ge v cc i e i c r g -v ge +v ge -v ge load ? ? ? 0 v 0 a + 0 v ce v ge 0 v t d(off) t i rr q rr =0.5i rr t rr 0.5i rr t t rr i e 0 a i e switching characteristics test circuit and waveforms t rr , q rr test waveform 0.1i cm i cm v cc v ce i c t 0 t i 0.1v cc 0.1v cc v cc i cm v ce i c t 0 0.02i cm t i i em v ec i e t 0 v t i t v cc 0 a igbt turn-on switching energy igbt turn-off switching energy fwdi reverse recovery energy turn-on / turn-off switching energy and reverse recovery ener gy test waveforms (integral time instruction drawing) ?
mitsubishi igbt modules CM600DU-12NFH high power switching use ? insulated type ? 5 february-2011 performance curves inverter part output characteristics (typical) collector-emitter saturation voltage characteristics (typical) t j =25 c 13 v 11 v 10 v 9.5 v v ge =15 v collector current i c (a) 0 200 400 600 800 1000 1200 012345 collector-emitter saturation voltage v cesat (v) 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 1200 collector-emitter voltage v ce (v) collector current i c (a) collector-emitter saturation voltage characteristics (typical) free wheeling diode forward characteristics (typical) t j =25 c g-e short-circuited , t j =25 c collector-emitter saturation voltage v cesat (v) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 20 emitter current i e (a) 10 100 1000 10000 0 0.5 1 1.5 2 2.5 3 gate-emitter voltage v ge (v) emitter-collector voltage v ec (v) t j =125 c t j =25 c v ge =20 v 8.5 8 v 7.5 7 v 15 v 9 v i c =1200 a i c =600 a i c =240 a t j =125 c t j =25 c
mitsubishi igbt modules CM600DU-12NFH high power switching use ? insulated type ? 6 february-2011 half-bridge switching characteristics (typical) half-bridge switching characteristics (typical) v cc =300 v, v ge =15 v, r g =2.0 ? , t j =125 c, inductive load v cc =300 v, i c =600 a, v ge =15 v, t j =125 c, inductive load switching time (ns) 10 100 1000 10 100 1000 switching time (ns) 100 1000 10000 0.1 1 10 collector current i c (a) external gate resistance r g ( ? ) half-bridge switching characteristics (typical) half-bridge switching characteristics (typical) v cc =300 v, v ge =15 v, r g =2.0 ? , t j =125 c, inductive load, per pulse v cc =300 v, i c /i e =600 a, v ge =15 v, t j =125 c, inductive load, per pulse switching energy (mj) reverse recovery energy (mj) 1 10 100 10 100 1000 switching energy (mj) reverse recovery energy (mj) 1 10 100 0.1 1 10 collector current i c (a) emitter current i e (a) external gate resistance r g ( ? ) e off e on e rr e off e on e rr t d(on) t r t d(off) t f t d(on) t r t d(off) t f
mitsubishi igbt modules CM600DU-12NFH high power switching use ? insulated type ? 7 february-2011 free wheeling diode reverse recovery characteristics (typical) capacitance characteristics (typical) v cc =300 v, v ge =15 v, r g =2.0 ? , t j =25 c, inductive load g-e short-circuited, t j =25 c t rr (ns), i rr (a) 10 100 1000 10 100 1000 capacitance (nf) 1 10 100 1000 0.1 1 10 100 emitter current i e (a) collector-emitter voltage v ce (v) gate charge characteristics (typical) transient thermal impedance characteristics (maximum) i c =600 a, t j =25 c single pulse, t c '=25c gate-emitter voltage v ge (v) 0 2 4 6 8 10 12 14 16 18 20 0 1000 2000 3000 4000 5000 normalized transient thermal impedance z th(j-c') 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 r th(j-c')q =53 k/kw, r th(j-c')d =78 k/kw gate charge q g (nc) time (s) v cc =200 v v cc =300 v c ies c oes c res i rr t rr
mitsubishi igbt modules CM600DU-12NFH high power switching use ? insulated type ? 8 february-2011 keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products bette r and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or prope rty damage. remember to give due consideration to safety when making your ci rcuit designs, with appropriate m easures such as (i) placement of substitutive, auxiliary circuits, (ii) us e of non-flammable material or (iii) pr evention against any ma lfunction or mishap. notes regarding these materials these materials are intended as a reference to assist our cust omers in the selection of the mitsubishi semiconductor product b est suited to the customer's application; they do not convey any license under any intellectual pr operty rights, or any other rights, belo nging to mitsubishi electric corpor ation or a third party. mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third-party's rights, origina ting in the use of any product data, diagrams, charts, programs, algorithms, or circuit applicati on examples contained in these materials. all information contained in these materi als, including product data, diagrams, char ts, programs and algorithms represents inf ormation on products at the time of publication of these materials, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers c ontact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for the latest product in formation before purchasing a product listed h erein. the information described here may contain te chnical inaccuracies or typographical erro rs. mitsubishi electric corporation assu mes no responsibility for any damage, liability, or other lo ss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporati on by various means, including the mitsubish i semiconductor home page (http ://www.mi tsubishichips.com/global/index.html). when using any or all of the information contained in these ma terials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility fo r any damage, liability or other loss res ulting from the information contained herein. mitsubishi electric corporation semiconduc tors are not designed or manufactured for us e in a device or system that is used und er circumstances in which human life is potentially at stake. pleas e contact mitsubishi electric corporation or an authorized mits ubishi semiconductor product distributor when considering the use of a product contained herein for any s pecific purposes, such as app aratus or systems for transportation, vehicular, medica l, aerospace, nuclear, or undersea repeater use. the prior written approval of mitsubishi elec tric corporation is necessary to reprint or reproduce in whole or in part these m aterials. if these products or technologies are subject to the japanese export control re strictions, they must be exported under a licen se from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is pro hibited. please contact mitsubishi elec tric corporation or an authorized mitsubishi se miconductor product distri butor for further detai ls on these materials or the products contained therein.
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