tig065e8 no. a1862-1/8 ordering number : ena1862a 60612 tkim/n2410pj tkim tc-00002514 sanyo semiconductors data sheet http:// semicon.sanyo.com/en/network features ? low-saturation voltage ? low voltage drive (2.5v) ? enhansment type ? built-in gate-to-emitter protection diode ? mounting height 0.9mm, mounting area 8.12mm 2 ? dv / dt guarantee * ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-emitter voltage v ces 400 v gate-to-emitter voltage (dc) v ges 4 v gate-to-emitter voltage (pulse) v ges pw 1ms 5 v collector current (pulse) i cp v ge =2.5v, c m =100 f 150 a maximum collector-to-emitter dv / dt dv / dt v ce 320v, starting tch=25 c 400 v / s channel temperature tch 150 c storage temperature tstg -40 to +150 c * : concerning dv / dt (slope of collector voltage at the time of turn-off), will be 100% screen-detected in the circuit shown a s fig. 1. package dimensions unit : mm (typ) 7011a-004 tig065e8 n-channel igbt light-controlling flash applications product & package information ? package : ech8 ? jeita, jedec : - ? minimum packing quantity : 3000 pcs./reel packing type: tl marking electrical connection 1 : emitter 2 : emitter 3 : emitter 4 : gate 5 : collector 6 : collector 7 : collector 8 : collector sanyo : ech8 1 4 85 0.15 0 to 0.02 0.25 0.25 2.8 2.3 0.65 2.9 0.3 0.9 0.07 to p view bottom view ze lot no. 87 6 5 12 3 4 tl TIG065E8-TL-H
tig065e8 no. a1862-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector-to-emitter breakdown voltage v (br)ces i c =2ma, v ge =0v 400 v collector-to-emitter cutoff current i ces v ce =320v, v ge =0v 10 a gate-to-emitter leakage current i ges v ge =4v, v ce =0v 10 a gate-to-emitter threshold voltage v ge (off) v ce =10v, i c =1ma 0.4 0.9 v collector-to-emitter saturation voltage v ce (sat) i c =100a, v ge =2.5v 4.2 7 v input capacitance cies v ce =10v, f=1mhz 3100 pf output capacitance coes 30 pf reverse transfer capacitance cres 23 pf fig.1 large current r load switching circuit note1. the collector voltage gradient dv / dt must be smaller than 400v / s to protect the device of gate-series resistance r g when it is turned off. ordering information device package shipping memo TIG065E8-TL-H ech8 3,000pcs./reel pb free and halogen free 100k c m r l r g v cc + tig065e8 v ge i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ge gate-to-emitter voltage, v ge -- v collector current, i c -- a it16024 0 0 25 75 50 150 100 125 it16025 0 0 12 5 9 8 7 6 34 10 25 125 75 50 150 100 0.5 1.0 4.0 2.0 2.5 3.0 3.5 1.5 v ge =4.0v 3.0v 2.5v v ce =10v 1.8v 25 c 75 c tc= --25 c tc=25 c
tig065e8 no. a1862-3/8 case temperature, tc -- c gate-to-emitter cutoff voltage, v ge (off) -- v v ge (off) -- tc collector-to-emitter voltage, v ce -- v v ce -- v ge gate-to-emitter voltage, v ge -- v case temperature, tc -- c v ce (sat) -- tc collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter voltage, v ce -- v v ce -- v ge gate-to-emitter voltage, v ge -- v collector-to-emitter voltage, v ce -- v v ce -- v ge gate-to-emitter voltage, v ge -- v collector-to-emitter voltage, v ce -- v cies, coes, cres -- v ce sw time -- r g switching time, sw time -- ns sw time -- i cp switching time, sw time -- ns collector current (pulse), i cp -- a gate series resistance, r g -- it16029 05075 100 125 150 25 --25 --50 5 9 8 7 6 10 4 3 0 1 2 v ge =3v, i c =150a 4 3 0 1 2 it16026 0 1.0 0.5 10 5 9 7 6 8 2.0 1.5 2.5 3.0 4.5 3.5 4.0 5.0 130a 100a tc= --25 c i c =150a it16030 0 50 75 100 125 150 25 --25 --50 1.0 0.6 0.5 0.9 0.8 0.7 0.4 0.3 0.2 0.1 0 0161820 68 41214 10 2 100 10 7 5 10000 1000 7 5 3 2 3 2 7 5 3 2 it16031 cies coes cres f=1mhz 4 3 0 1 2 it16028 0 1.0 0.5 10 5 9 7 6 8 2.0 1.5 2.5 3.0 4.5 3.5 4.0 5.0 130a 100a tc=75 c i c =150a 4 3 0 1 2 it16027 0 1.0 0.5 10 5 9 7 6 8 2.0 1.5 2.5 3.0 4.5 3.5 4.0 5.0 130a 100a tc=25 c i c =150a 2 3 57 57 3 2 100 1000 10 it16032 3 2 7 5 7 5 3 2 1000 10000 100 3 2 7 5 7 5 3 2 1000 10000 100 t r t d (off) t d (on) t f 02040 80 60 100 140 160 120 200 180 it16033 t r t d (off) t d (on) t f v ge =2.5v, i c =100a v ce =10v i c =1ma switching test circuit fig.1 v ge =2.5v v cc =320v i cp =150a c m =100 f pw=50 s switching test circuit fig.1 v ge =2.5v v cc =320v r g =140 c m =100 f pw=50 s cies, coes, cres -- pf
tig065e8 no. a1862-4/8 collector current (pulse), i cp -- a main capacitor, c m -- f c m -- i cp collector current (pulse), i cp -- a main capacitor, c m -- f c m -- i cp gate-to-emitter voltage, v ge -- v collector current (pulse), i cp -- a i cp -- v ge dv / dt -- r g gate series resistance, r g -- turn off dv / dt -- v / s dv / dt -- turn off i c turn off collector current, turn off i c -- a turn off dv / dt, dv / dt -- v / s it16036 20 40 60 80 100 120 140 0 160 50 0 100 150 200 250 300 v ce =320v v ge =2.5v tc=25 c tc=70 c it16037 20 40 60 80 100 120 140 016 0 50 0 100 150 200 300 350 250 400 450 500 v ce =320v v ge =3v tc=25 c tc=70 c it16038 20 40 60 80 100 120 140 0 160 0 100 200 300 400 500 tc=25 c v ce 320v it16103 200 250 300 350 100 150 50 0 0 100 200 300 500 400 600 it16104 1.5 2.0 3.5 4.5 3.0 4.0 5.5 5.0 2.5 1.0 0.5 0 0 20 40 60 80 100 120 140 180 160 v ce =320v c m =100 f tc=25 c tc=70 c switching test circuit fig.1 v ge =2.5v v cc =320v i cp =150a
tig065e8 no. a1862-5/8 de nition of dv/dt dv/dt is de ned as the maximum slope of the below v ce curve during turn-off period. dv/dt= v ce / t= v ce /100ns overall waveform enlarged picture of turn-off period de nition of switching time v ge v ce i c v ge :10% v ce :90% v ge :90% v ce :10% v ce :10% t d (on) t d (off) t r t f i c :90% i c :10% it15324 t t t v,i v ce i c i cp turn off i c t turn-off period t=100ns i c v ce v ce it15323 turn off v ce
tig065e8 no. a1862-6/8 embossed taping speci cation TIG065E8-TL-H
tig065e8 no. a1862-7/8 outline drawing land pattern example TIG065E8-TL-H mass (g) unit 0.02 * for reference mm unit: mm 0.4 0.6 2.8 0.65
tig065e8 no. a1862-8/8 ps this catalog provides information as of june, 2012. speci cations and information herein are subject to change without notice. note : tig065e8 has protection diode between gate and emitter but handling it requires suf cient care to be taken. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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