APTC60DSKM45T1G APTC60DSKM45T1G ? rev 0 august, 2009 www.microsemi.com 1 ? 7 pins 3/4 must be shorted together absolute maximum ratings these devices are sensitive to electrostatic di scharge. proper handling pro cedures should be followed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 600 v t c = 25c 49 i d continuous drain current t c = 80c 38 i dm pulsed drain current 130 a v gs gate - source voltage 20 v r dson drain - source on resistance 45 m p d maximum power dissipation t c = 25c 250 w i ar avalanche current (repetitive and non repetitive) 15 a e ar repetitive avalanche energy 3 e as single pulse avalanche energy 1900 mj application ? ac and dc motor control ? switched mode power supplies features ? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated - very rugged ? very low stray inductance - symmetrical design ? internal thermistor fo r temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? each leg can be easily paralleled to achieve a single buck of twice the current capability ? low profile ? rohs compliant dual buck chopper super junction mosfet power module v dss = 600v r dson = 45m max @ tj = 25c i d = 49a @ tc = 25c
APTC60DSKM45T1G APTC60DSKM45T1G ? rev 0 august, 2009 www.microsemi.com 2 ? 7 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 600v t j = 25c 250 i dss zero gate voltage drain current v gs = 0v,v ds = 600v t j = 125c 500 a r ds(on) drain ? source on resistance v gs = 10v, i d = 24.5a 40 45 m v gs(th) gate threshold voltage v gs = v ds , i d = 3ma 2.1 3 3.9 v i gss gate ? source leakage current v gs = 20 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 7.2 c oss output capacitance v gs = 0v ; v ds = 25v f = 1mhz 8.5 nf q g total gate charge 150 q gs gate ? source charge 34 q gd gate ? drain charge v gs = 10v v bus = 300v i d = 49a 51 nc t d(on) turn-on delay time 21 t r rise time 30 t d(off) turn-off delay time 100 t f fall time inductive switching (125c) v gs = 10v v bus = 400v i d = 49a r g = 5 45 ns e on turn-on switching energy 675 e off turn-off switching energy inductive switching @ 25c v gs = 10v ; v bus = 400v i d = 49a ; r g = 5 520 j e on turn-on switching energy 1100 e off turn-off switching energy inductive switching @ 125c v gs = 10v ; v bus = 400v i d = 49a ; r g = 5 635 j chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 25 i rm maximum reverse leakage current v r =600v t j = 125c 500 a i f dc forward current tc = 80c 60 a i f = 60a 1.7 2.3 i f = 120a 2 v f diode forward voltage i f = 60a t j = 125c 1.4 v t j = 25c 70 t rr reverse recovery time t j = 125c 140 ns t j = 25c 100 q rr reverse recovery charge i f = 60a v r = 400v di/dt =200a/s t j = 125c 690 nc
APTC60DSKM45T1G APTC60DSKM45T1G ? rev 0 august, 2009 www.microsemi.com 3 ? 7 thermal and package characteristics symbol characteristic min typ max unit coolmos 0.5 r thjc junction to case thermal resistance diode 0.85 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 80 g temperature sensor ntc (see application note apt0406 on www.micr osemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 sp1 package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTC60DSKM45T1G APTC60DSKM45T1G ? rev 0 august, 2009 www.microsemi.com 4 ? 7 typical coolmos performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 4v 4.5v 5v 5.5v 6v 6.5v 0 40 80 120 160 200 240 280 320 360 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =15&10v low voltage output characteristics transfert characteristics t j =25c t j =125c 0 20 40 60 80 100 120 140 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 0 20 40 60 80 100 120 140 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 50a 0 10 20 30 40 50 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
APTC60DSKM45T1G APTC60DSKM45T1G ? rev 0 august, 2009 www.microsemi.com 5 ? 7 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage (normalized) on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d = 50a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10 ms 1 ms 100 s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited b y r ds on single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =120v v ds =300v v ds =480v 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 160 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =50a t j =25c
APTC60DSKM45T1G APTC60DSKM45T1G ? rev 0 august, 2009 www.microsemi.com 6 ? 7 t j =25c t j =150c 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage delay times vs current td(on) td(off) 0 20 40 60 80 100 120 140 0 1020304050607080 i d , drain current (a) t d(on) and t d(off) (ns) v ds =400v r g =5 ? t j =125c l=100h rise and fall times vs current t r t f 0 10 20 30 40 50 60 70 0 1020304050607080 i d , drain current (a) t r and t f (ns) v ds =400v r g =5 ? t j =125c l=100h switching energy vs current e on e off 0 0.4 0.8 1.2 1.6 2 0 1020304050607080 i d , drain current (a) switching energy (mj) v ds =400v r g =5 ? t j =125c l=100h e on e off 0 0.5 1 1.5 2 2.5 0 1020304050 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =400v i d =50a t j =125c l=100h hard switching zcs zvs 0 50 100 150 200 250 300 5 101520253035404550 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =400v d=50% r g =5 ? t j =125c t c =75c
APTC60DSKM45T1G APTC60DSKM45T1G ? rev 0 august, 2009 www.microsemi.com 7 ? 7 typical chopper diode performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration t j =25c t j =125c 0 40 80 120 160 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f , anode to cathode voltage (v) i f , forward current (a) forward current vs forward voltage i rrm vs. current rate of charge 30 a 60 a 120 a 0 5 10 15 20 25 30 35 40 0 200 400 600 800 1000 1200 -dif/dt (a/s) i rrm , reverse recovery current (a) t j =125c v r =400v trr vs. current rate of charge 30 a 60 a 120 a 50 75 100 125 150 175 0 200 400 600 800 1000 1200 -di f /dt (a/s) t rr , reverse recovery time (ns) t j =125c v r =400v q rr vs. current rate charge 30 a 60 a 120 a 0.0 0.5 1.0 1.5 2.0 0 200 400 600 800 1000 1200 -dif/dt (a/s) q rr , reverse recovery charge (c) t j =125c v r =400v capacitance vs. reverse voltage 0 100 200 300 400 500 1 10 100 1000 v r , reverse voltage (v) c, capacitance (pf) 0 20 40 60 80 100 25 50 75 100 125 150 175 case temperature (c) i f (a) dc forward current vs. case temp. duty cycle = 0.5 t j =175c ?coolmos? comprise a new family of transistors developed by in fineon technologies ag. ?coolmos? is a trademark of infineon technologies ag?. microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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