cdsv16-g features -fast switching speed -electrically identical to standard jedec -high conductance -surface mount package ideally suited for automatic insertion -flat package sod-123 in stead mini-melf package mechanical data -case: sod-323, molded plastic -t erminals: solderable per mil-std-202, method 208 -w eight: 0.01 gram(approx.) page 1 qw -b0027 smd switching diode rohs device maximum rating (at t a=25c unless otherwise noted) rev :a electrical characteristics (at t a=25c unless otherwise noted) o c o c o c/w mw ma ma v v v +150 +125 625 200 150 53 75 100 -65 t stg t j p d io v r(r ms ) v rrm v r wm v r v rm i fm t p = 1us t p = 1s storage temperature junction temperature power dissipation peak forward surge current a verage rectified output current peak repetitive peak reverse voltage w orking peak reverse voltage dc blocking voltage non-repetitive peak reverse voltage forward continuous current parameter conditions symbol min max unit ns p f na ua v 4 2 25 1 0.715 0.855 1.0 1.25 c t i r v f t rr capacitance between terminals reverse current forward voltage reverse recovery time parameter conditions symbol min t yp max unit f = 1 mh z ,and 0vdc reverse voltage v r = 20 v v r = 75 v i f = 1 ma dc i f = 10ma dc i f = 50ma dc i f =150ma dc i f = i r =10 ma, r l =100 ohms, irr = 0.1 x i r r ja rms reverse voltage thermal resistance (junction to ambient) i fsm 300 2 1 a sod-323 dimensions in inches and (millimeters) 0.106 (2.70) 0.098 (2.50) 0.055 (1.40) 0.047 (1.20) 0.071 (1.80) 0.063 (1.60) 0.039 (1.00)max 0.014 (0.35) 0.010 (0.25) 0.019 (0.475)ref . 0.006 (0.15) 0.004 (0.10)max 0.003 (0.08)
t ypical characteristics (cdsv16-g) page 2 smd switching diode qw -b0027 fig.1 - forward characteristics fig.2 - leakage current v .s. junction t emperature rev :a 0.01 0.1 1 10 100 1000 0 1 2 v f , instantaneous forward v oltage (v) i f , i n s t a n t a n e o u s f o r w a r d c u r r e n t ( m a ) 1 10 100 1,000 10,000 0 100 200 tj, junction t emperature ( o c) i r , l e a k a g e c u r r e n t ( n a ) v r =20v
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