document number: 93363 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 31-may-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual int-a-pak low profile "half-bridge" (standard speed igbt), 400 a GA400TD60S vishay semiconductors dual int-a-pak low profile features ? generation 4 igbt technology ? standard: optimized for hard switching speed dc to 1 khz ?low v ce(on) ? square rbsoa ?hexfred ? antiparallel diode wi th ultrasoft reverse recovery characteristics ? industry standard package ?al 2 o 3 dbc ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed for industrial level benefits ? increased operating efficiency ? performance optimized as output inverter stage for tig welding machines ? direct mounting on heatsink ? very low junction to case thermal resistance note (1) maximum continuous collector cu rrent must be limited to 500 a to do not ex ceed the maximum temp erature of terminals product summary v ces 600 v i c dc at t c = 25 c 750 a v ce(on) (typical) at 400 a, 25 c 1.24 v absolute maximum ratings parameter symbol test conditions max. units collector to em itter voltage v ces 600 v continuous coll ector current i c (1) t c = 25 c 750 a t c = 80 c 525 pulsed collector current i cm 1000 clamped inductive load current i lm 1000 diode continuous forward current i f t c = 25 c 219 t c = 80 c 145 gate to emitter voltage v ge 20 v maximum power dissipation (igbt) p d t c = 25 c 1563 w t c = 80 c 875 rms isolation voltage v isol any terminal to case (v rms t = 1 s, t j = 25 c) 3500 v
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93363 2 revision: 31-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 GA400TD60S vishay semiconductors dual int-a-pak low profile "half-bridge" (standard speed igbt), 400 a electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units collector to emitte r breakdown voltage v br(ces) v ge = 0 v, i c = 500 a 600 - - v collector to em itter voltage v ce(on) v ge = 15 v, i c = 300 a - 1.14 1.35 v ge = 15 v, i c = 400 a - 1.24 1.52 v ge = 15 v, i c = 300 a, t j = 125 c - 1.08 1.29 v ge = 15 v, i c = 400 a, t j = 125 c - 1.21 1.5 gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 3.0 4.6 6.3 collector to emitter leakage current i ces v ge = 0 v, v ce = 600 v - 0.075 1 ma v ge = 0 v, v ce = 600 v, t j = 125 c - 1.8 10 diode forward voltage drop v fm i fm = 300 a - 1.48 1.75 v i fm = 400 a - 1.63 1.98 i fm = 300 a, t j = 125 c - 1.50 1.77 i fm = 400 a, t j = 125 c - 1.70 2.04 gate to emitter leakage current i ges v ge = 20 v - - 200 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units turn-on switching loss e on i c = 400 a, v cc = 360 v, v ge = 15 v, r g = 1.5 ? , l = 500 h, t j = 25 c -8.5- mj turn-off switching loss e off - 113 - total switching loss e tot - 121.5 - turn-on switching loss e on i c = 400 a, v cc = 360 v, v ge = 15 v, r g = 1.5 ? , l = 500 h, t j = 125 c -21- turn-off switching loss e off - 163 - total switching loss e tot - 184 - turn-on delay time t d(on) - 532 - ns rise time t r - 377 - turn-off delay time t d(off) - 496 - fall time t f - 1303 - reverse bias safe operating area rbsoa t j = 150 c, i c = 1000 a, v cc = 400 v, v p = 600 v, r g = 22 ??? v ge = 15 v to 0 v, l = 500 h fullsquare diode reverse recovery time t rr i f = 300 a, di f /dt = 500 a/s, v cc = 400 v, t j = 25 c - 150 179 ns diode peak reverse current i rr -4359a diode recovery charge q rr -3.96.3c diode reverse recovery time t rr i f = 300 a, di f /dt = 500 a/s, v cc = 400 v, t j = 125 c - 236 265 ns diode peak reverse current i rr -6480a diode recovery charge q rr - 8.6 11.1 c
document number: 93363 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 31-may-11 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 GA400TD60S dual int-a-pak low profile "half-bridge" (standard speed igbt), 400 a vishay semiconductors fig. 1 - typical output characteristics, t j = 25 c, v ge = 15 v fig. 2 - typical output characteristics, t j = 125 c fig. 3 - maximum dc ig bt collector current vs. case temperature fig. 4 - typical igbt coll ector to emitter voltage vs. junction temperature, v ge = 15 v thermal and mechanical specifications parameter symbol min. typ. max. units operating junction and storage temperature range t j , t stg - 40 - 150 c junction to case per leg igbt r thjc - - 0.08 c/w diode - - 0.4 case to sink per module r thcs -0.05- mounting torque case to heatsink: m6 screw 4 - 6 nm case to terminal 1, 2, 3: m5 screw 2 - 4 weight - 270 - g i c (a) v ce (v) 0.25 0.50 1.00 1.50 2.00 0.75 1.25 1.75 0 93363_01 800 200 100 400 300 600 500 700 t j = 25 c t j = 125 c i c (a) v ce (v) 0.25 0.50 1.00 1.50 2.00 1.25 0.75 1.75 93363_02 0 800 200 100 400 300 600 500 700 v g e = 9 v v g e = 12 v v g e = 15 v v g e = 18 v allowable case temperature (c) i c - continuous collector current (a) 300 100 800 500 400 200 600 700 0 100 160 0 40 60 140 80 120 20 93363_03 dc v ce (v) t j (c) 20 40 80 120 160 60 100 140 0.6 1.0 1.4 93363_04 1.7 0.9 1.3 0.8 1.2 1.6 0.7 1.1 1.5 400 a 600 a 300 a 100 a
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93363 4 revision: 31-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 GA400TD60S vishay semiconductors dual int-a-pak low profile "half-bridge" (standard speed igbt), 400 a fig. 5 - typical igbt transfer characteristics fig. 6 - typical igbt gate threshold voltage fig. 7 - igbt reverse bias soa, t j = 150 c, v ge = 15 v, r g = 22 ? fig. 8 - typical igbt zero gate voltage collector current fig. 9 - typical diode forward characteristics fig. 10 - maximum dc forward current vs. case temperature i c (a) v g e (v) 39 45 7 68 0 100 200 400 300 600 500 700 93363_05 800 t j = 25 c t j = 125 c v ce = 20 v v g eth (v) i c (ma) 0.4 1.0 0.5 0.6 0.8 0.7 0.9 2.0 2.5 3.0 4.0 3.5 4.5 93363_06 5.0 t j = 25 c t j = 125 c i c (a) v ce (v) 1 10 100 1000 1 93363_07 10 000 10 100 1000 i ce s (ma) v ce s (v) 100 600 200 300 400 500 0.001 93363_08 10 0.1 0.01 1 t j = 25 c t j = 125 c i f (a) v fm (v) 02.5 0.5 1.0 1.5 2.0 0 93363_09 600 200 100 300 500 400 t j = 25 c t j = 125 c allowable case temperature (c) i f - continuous forwar d current (a) 160 120 80 40 200 240 0 100 160 0 40 60 140 80 120 20 93363_10 dc
document number: 93363 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 31-may-11 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 GA400TD60S dual int-a-pak low profile "half-bridge" (standard speed igbt), 400 a vishay semiconductors fig. 11 - typical igbt energy loss vs. i c , t j = 125 c, v cc = 360 v, r g = 1.5 ? , v ge = 15 v, l = 500 h fig. 12 - typical igbt switching time vs. i c , t j = 125 c, v cc = 360 v, r g = 1.5 ? , v ge = 15 v, l = 500 h fig. 13 - typical igbt energy loss vs. r g , t j = 125 c, i c = 400 a, v cc = 360 v, v ge = 15 v, l = 500 h fig. 14 - typical igbt switching time vs. r g , t j = 125 c, i c = 400 a, v cc = 360 v, v ge = 15 v, l = 500 h fig. 15 - typical reverse recovery time vs. di f /dt, v cc = 400 v, i f = 300 a fig. 16 - typical reverse recovery current vs. di f /dt, v cc = 400 v, i f = 300 a ener g y (mj) i c (a) 0 100 200 400 300 0 93363_11 175 150 100 125 50 75 25 e on e off s witchin g time (ns) i c (a) 0 100 200 400 300 10 93363_12 10 000 100 1000 t d(off) t d(on) t r t f ener g y (mj) r g ( ) 0 5 10 20 15 25 0 93363_13 175 150 75 125 100 50 25 e on e off s witchin g time (ns) r g ( ) 0 5 15 20 10 25 100 93363_14 10 000 1000 t d(off) t d(on) t f t r t rr (ns) d i f / d t (a/s) 100 200 400 600 800 1000 300 500 700 900 100 300 240 120 160 200 260 280 140 180 220 93363_15 t j = 25 c t j = 125 c i rr (a) di f /dt (a/s) 100 200 400 600 800 1000 300 500 700 900 10 130 90 110 120 30 50 70 80 100 20 40 60 93363_16 t j = 25 c t j = 125 c
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93363 6 revision: 31-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 GA400TD60S vishay semiconductors dual int-a-pak low profile "half-bridge" (standard speed igbt), 400 a fig. 17 - typical reverse recovery charge vs. di f /dt, v cc = 400 v, i f = 300 a fig. 18 - maximum thermal impedance z thjc characteristics (igbt) fig. 19 - maximum thermal impedance z thjc characteristics (diode) q rr (c) d i f / d t (a/s) 100 200 400 600 800 1000 300 500 700 900 0 22 16 4 2 6 8 20 12 14 18 10 93363_17 t j = 25 c t j = 125 c 0.0001 0.001 0.01 0.1 1 0.00001 93363_18 0.0001 0.001 0.01 0.1 1 t 1 - rectan g ular pulse duration (s) z thjc - thermal impe d ance junction to case (c/w) 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc 0.001 0.01 0.1 1 0.00001 93363_19 0.0001 0.001 0.01 0.1 1 t 1 - rectan g ular pulse duration (s) z thjc - thermal impe d ance junction to case (c/w) 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc
document number: 93363 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 31-may-11 7 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 GA400TD60S dual int-a-pak low profile "half-bridge" (standard speed igbt), 400 a vishay semiconductors ordering information table circuit configuration links to related documents dimensions www.vishay.com/doc?95435 1 - insulated gate bipolar transistor (igbt) 2 - a = generation 4 igbt 3 - current rating (400 = 400 a) 4 - circuit configuration (t = half-bridge) 5 - package indicator (d = dual int-a-pak low profile) 6 - voltage rating (60 = 600 v) 7 - speed/type (s = standard speed igbt) device code 5 1 3 2 4 6 7 g a 400 t d 60 s 4 5 1 6 7 3 2
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