absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 75* i d @ v gs = 12v, t c = 100c continuous drain current 56 i dm pulsed drain current ? 300 p d @ t c = 25c max. power dissipation 300 w linear derating factor 2.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 500 mj i ar avalanche current ? 75* a e ar repetitive avalanche energy ? 30 mj dv/dt peak diode recovery dv/dt ? 2.5 v/ns t j operating junction -55 to 150 t stg storage temperature range package mounting surface temperature 300 ( for 5sec) weight 3.3 (typical ) g pre-irradiation international rectifier?s radhard hexfet ? technol- ogy provides high performance power mosfets for space applications. this technology has over a de- cade of proven performance and reliability in satellite applications. these devices have been character- ized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters. o c a radiation hardened power mosfet surface mount(smd-2) 12/12/01 www.irf.com 1 product summary part number radiation level r ds(on) i d qpl part number irhna7064 100k rads (si) 0.015 ? 75*a jansr2n7431u irhna3064 300k rads (si) 0.015 ? 75*a jansf2n7431u irhna4064 600k rads (si) 0.015 ? 75*a jansg2n7431u IRHNA8064 1000k rads (si) 0.015 ? 75*a jansh2n7431u for footnotes refer to the last page *current is limited by pin diameter irhna7064 jansr2n7431u 60v, n-channel ref: mil-prf-19500/664 rad hard ? hexfet ? technology smd-2 features: single event effect (see) hardened low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed surface mount light weight pd - 91416b
2 www.irf.com irhna7064 pre-irradiation note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 75* i sm pulse source current (body diode) ? ? ? 356 v sd diode forward voltage ? ? 3.0 v t j = 25c, i s = 75a, v gs = 0v ? t rr reverse recovery time ? ? 220 ns t j = 25c, i f = 75a, di/dt 100a/ s q rr reverse recovery charge ? ? 3.1 c v dd 50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 0.42 r thj-pcb junction-to-pc board ? 1.6 ? soldered to a 1? sq. copper-clad board electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 60 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.056 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.015 v gs = 12v, i d = 56a resistance ? ? 0.018 v gs = 12v, i d = 75a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 18 ? ? s ( )v ds > 15v, i ds = 56a ? i dss zero gate voltage drain current ? ? 25 v ds = 48v ,v gs =0v ? ? 250 v ds = 48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 260 v gs =12v, i d = 75a q gs gate-to-source charge ? ? 60 nc v ds = 30v q gd gate-to-drain (?miller?) charge ? ? 86 t d (on) turn-on delay time ? ? 27 v dd =30v, i d = 75a t r rise time ? ? 120 v gs =12v, r g = 2.35 ? t d (off) turn-off delay time ? ? 76 t f fall time ? ? 93 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 4900 ? v gs = 0v, v ds = 25v c oss output capacitance ? 2800 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 860 ? na ? ? nh ns a *current is limited by the internal wire diameter ? measured from the center of drain pad to center of source pad c/w
www.irf.com 3 pre-irradiation irhna7064 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300 - 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 60 ? 60 ? v v gs = 12v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 25 ? 50 a v ds =48v, v gs =0v r ds(on) static drain-to-source ? ? 0.015 ? 0.025 ? v gs = 12v, i d =56a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 0.015 ? 0.025 ? v gs = 12v, i d =56a on-state resistance (smd-2) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. 1. part number irhna7064 (jansr2n7431u) 2. part numbers irhna3064, irhna4064 and irhna8054 (jansf2n7431u, jansg2n7431u and jansh2n7431u) fig a. single event effect, safe operating area v sd diode forward voltage ? ? 3.0 ? 3.0 v v gs = 0v, i s = 75a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area n o i t e l ) ) 2 m c / g m ( / v e m y g r e n e ) v e m ( e g n a r ) m ( ) v ( s d v v 0 = s g v @v 5 - = s g v @v 0 1 - = s g v @v 5 1 - = s g v @v 0 2 - = s g v @ i9 . 9 55 4 38 . 2 30 60 65 40 40 3 r b8 . 6 35 0 39 30 45 30 35 20 2 0 10 20 30 40 50 60 70 0 -5 -10 -15 -20 vgs vds br i radiation characteristics
4 www.irf.com irhna7064 pre-irradiation fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 10 100 1000 5 6 7 8 9 10 11 12 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 89a 75a
www.irf.com 5 pre-irradiation irhna7064 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 50 100 150 200 250 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 35a v = 12v ds v = 30v ds v = 48v ds 1 10 100 1000 0.0 1.0 2.0 3.0 4.0 5.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 75a
6 www.irf.com irhna7064 pre-irradiation fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v gs 25 50 75 100 125 150 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 7 pre-irradiation irhna7064 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 16a 22a 35a v gs
8 www.irf.com irhna7064 pre-irradiation ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 25v, starting t j = 25 c, l=0.17mh peak i l = 75a, v gs =12v ? i sd 75a, di/dt 220a/ s, v dd 60v, t j 150 c foot notes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 12/01 case outline and dimensions ? smd-2
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