? semiconductor components industries, llc, 2002 july, 2002 rev. 6 1 publication order number: mmqa5v6t1/d mmqa5v6t1 series 24 watt peak power zener transient voltage suppressors sc59 quad common anode for zeners esd protection these quad monolithic silicon voltage suppressors are designed for applications requiring transient voltage protection capability. they are intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. their quad junction common anode design protects four separate lines using only one package. these devices are ideal for situations where board space is at a premium. specification features: ? sc59 package allows four separate unidirectional configurations ? working peak reverse voltage range 3.0 v to 2.5 v ? standard zener breakdown voltage range 5.6 v to 33 v ? peak power minimum 24 w @ 1 ms (unidirectional), per figure 5 ? peak power minimum 150 w @ 20 s (unidirectional), per figure 6 ? esd rating of class 3 (> 16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? package designed for optimal automated board assembly ? small package size for high density applications ? low leakage < 2.0 a mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds maximum ratings rating symbol value unit peak power dissipation (note 1) @ 1.0 ms @ t l 25 c p pk 24 w peak power dissipation (note 2) @ 20 s @ t l 25 c p pk 150 w total power dissipation (note 3) @ t a = 25 c derate above 25 c thermal resistance junction to ambient p d r ja 225 1.8 556 mw mw/ c c/w total power dissipation (note 4) @ t a = 25 c derate above 25 c thermal resistance junction to ambient p d r ja 300 2.4 417 mw mw/ c c/w junction and storage temperature range t j , t stg 55 to +150 c 1. nonrepetitive current pulse per figure 5 and derated above t a = 25 c per figure 4 2. nonrepetitive current pulse per figure 6 and derated above t a = 25 c per figure 4 3. fr5 board = 1.0 x 0.75 x 0.62 in. 4. alumina substrate = 0.4 x 0.3 x 0.024 in., 99.5% alumina device package shipping ordering information mmqaxxxt1 sc59 3000/tape & reel 2the at1o suffix refers to an 8 mm, 7 inch reel. the at3o suffix refers to an 8 mm, 13 inch reel. mmqaxxxt3* sc59 10,000/tape & reel 1 2 3 4 5 6 pin 1. cathode 2. anode 3. cathode 4. cathode 5. anode 6. cathode 1 2 3 6 5 4 dev = device code = (see table next page) m = date code marking diagram pin assignment sc59 case 318f style 1 dev m *mmqa13vt3 not available in 10,000/tape & reel http://onsemi.com
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f mmqa5v6t1 series http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted, v f = 0.9 v max. @ i f (note 5) = 10 ma) unidirectional (circuit tied to pins 1, 2 and 5; pins 2, 3 and 5; or 2, 4 and 6; or pins 2, 5 and 6) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm z zt maximum zener impedance @ i zt v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br i f forward current v f forward voltage @ i f electrical characteristics i r @ breakdown voltage z zt (note 6) v c @ i pp (note 7) device v rwm i r @ v rwm v br (note 5) (volts) @ i t z zt (n o t e 6) @ i zt v c i pp v br device d ev i ce marking volts na min nom max ma ma volts amps mw/ c mmqa5v6t1 5a6 3.0 2000 5.32 5.6 5.88 1.0 400 1.0 8.0 3.0 1.26 mmqa6v2t1,t3 6a2 4.0 700 5.89 6.2 6.51 1.0 300 1.0 9.0 2.66 10.6 mmqa6v8t1 6a8 4.3 500 6.46 6.8 7.14 1.0 300 1.0 9.8 2.45 10.9 mmqa12vt1 12a 9.1 75 11.4 12 12.6 1.0 80 1.0 17.3 1.39 14 mmqa13vt1,t3 13a 9.8 75 12.35 13 13.65 1.0 80 1.0 18.6 1.29 15 mmqa15vt1 15a 11 75 14.25 15 15.75 1.0 80 1.0 21.7 1.1 16 mmqa18vt1 18a 14 75 17.1 18 18.9 1.0 80 1.0 26 0.923 19 mmqa20vt1,t3* 20a 15 75 19.0 20 21.0 1.0 80 1.0 28.6 0.84 20.1 mmqa21vt1 21a 16 75 19.95 21 22.05 1.0 80 1.0 30.3 0.792 21 mmqa22vt1 22a 17 75 20.9 22 23.1 1.0 80 1.0 31.7 0.758 22 mmqa24vt1 24a 18 75 22.8 24 25.2 1.0 100 1.0 34.6 0.694 25 mmqa27vt1 27a 21 75 25.65 27 28.35 1.0 125 1.0 39.0 0.615 28 mmqa30vt1 30a 23 75 28.5 30 31.5 1.0 150 1.0 43.3 0.554 32 mmqa33vt1 33a 25 75 31.35 33 34.65 1.0 200 1.0 48.6 0.504 37 5. v br measured at pulse test current i t at an ambient temperature of 25 c 6. z zt is measured by dividing the ac voltage drop across the device by the ac current supplied. the specified limits are i z (ac) = 0.1 i z (dc) with the ac frequency = 1.0 khz 7. surge current waveform per figure 5 and derate per figure 4 *not available in the 10,000/tape & reel.
mmqa5v6t1 series http://onsemi.com 3 typical characteristics 300 v z , nominal zener voltage (v) c, capacitance (pf) 250 200 150 100 50 0 5.6 6.8 12 20 27 biased at 0 v biased at 1 v biased at 50% of v z nom figure 1. typical capacitance 5.6 6.8 20 27 10,000 1,000 100 10 0 figure 2. typical leakage current i r , leakage (na) v z , nominal zener voltage (v) 33 33 +150 c +25 c -40 c figure 3. steady state power derating curve figure 4. pulse derating curve 0 25 50 75 100 125 150 175 300 250 200 150 100 50 0 p d , power dissipation (mw) t a , ambient temperature ( c) fr5 board alumina substrate 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 t a , ambient temperature ( c) peak pulse derating in % of peak power or current @ t a = 25 c
mmqa5v6t1 series http://onsemi.com 4 typical characteristics figure 5. 10 1000 s pulse waveform value (%) 100 50 0 01234 t, time (ms) t r t p pulse width (t p ) is defined as that point where the peak current decays to 50% of i rsm . t r 10 s half value i rsm 2 peak value i rsm figure 6. 8 20 s pulse waveform figure 7. maximum nonrepetitive surge power, ppk versus pw figure 8. typical maximum nonrepetitive surge power, ppk versus v br ppk peak surge power (w) 0.1 1.0 10 100 1000 1.0 10 100 power is defined as v rsm x i z (pk) where v rsm is the clamping voltage at i z (pk). pw, pulse width (ms) unidirectional rectangular waveform, ta = 25 c 100 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) % of peak pulse current 200 180 160 140 120 100 80 60 40 20 0 5.6 6.8 12 20 33 nominal v z p t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s peak value i rsm @ 8 s half value i rsm /2 @ 20 s 27 , peak surge power (w) pk 8 20 waveform as per figure 6 10 100 waveform as per figure 5
mmqa5v6t1 series http://onsemi.com 5 typical common anode applications a quad junction common anode design in a sc-74 package protects four separate lines using only one package. this adds flexibility and creativity to pcb design especially when board space is at a premium. a simplified example of mmqa series device applications is illustrated below. keyboard terminal printer etc. functional decoder i/o a mmqa series device gnd computer interface protection b c d microprocessor protection i/o ram rom clock cpu control bus address bus data bus gnd v gg v dd mmqa series device
mmqa5v6t1 series http://onsemi.com 6 information for using the sc-59 6 lead surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self-align when subjected to a solder reflow process. inches mm sc-59 6 lead 0.028 0.7 0.074 1.9 0.037 0.95 0.037 0.95 0.094 2.4 0.039 1.0 sc-59 6 lead power dissipation the power dissipation of the sc-59 6 lead is a function of the pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction temperature of the die, r ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the sc-59 6 lead package, p d can be calculated as follows: p d = t j(max) t a r ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 225 milliwatts. p d = 150 c 25 c 556 c/w = 225 milliwatts the 556 c/w for the sc-59 6 lead package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. there are other alternatives to achieving higher power dissipation from the sc-59 6 lead package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. solder stencil guidelines prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. solder stencils are used to screen the optimum amount. these stencils are typically 0.008 inches thick and may be made of brass or stainless steel. for packages such as the sc-59, sc-59 6 lead, sc-70/sot-323, sod-123, sot-23, sot-143, sot-223, so-8, so-14, so-16, and smb/smc diode packages, the stencil opening should be the same as the pad size or a 1:1 registration.
mmqa5v6t1 series http://onsemi.com 7 soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference should be a maximum of 10 c. ? the soldering temperature and time should not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient should be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used since the use of forced cooling will increase the temperature gradient and will result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. typical solder heating profile for any given circuit board, there will be a group of control settings that will give the desired heat pattern. the operator must set temperatures for several heating zones and a figure for belt speed. taken together, these control settings make up a heating aprofileo for that particular circuit board. on machines controlled by a computer, the computer remembers these profiles from one operating session to the next. figure 9 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. this profile will vary among soldering systems, but it is a good starting point. factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. this profile shows temperature versus time. the line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. the two profiles are based on a high density and a low density board. the vitronics smd310 convection/infrared reflow soldering system was used to generate this profile. the type of solder used was 62/36/2 tin lead silver with a melting point between 177189 c. when this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. the components on the board are then heated by conduction. the circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. step 1 preheat zone 1 ramp" step 2 vent soak" step 3 heating zones 2 & 5 ramp" step 4 heating zones 3 & 6 soak" step 5 heating zones 4 & 7 spike" step 6 vent step 7 cooling 200 c 150 c 100 c 50 c time (3 to 7 minutes total) t max solder is liquid for 40 to 80 seconds (depending on mass of assembly) 205 to 219 c peak at solder joint desired curve for low mass assemblies 100 c 150 c 160 c 170 c 140 c figure 9. typical solder heating profile desired curve for high mass assemblies
mmqa5v6t1 series http://onsemi.com 8 outline dimensions 24 watt peak power transient voltage suppressors surface mounted sc59 case 318f03 issue f style 1: pin 1. cathode 2. anode 3. cathode 4. cathode 5. anode 6. cathode 23 4 5 6 a l 1 s g d b h c 0.05 (0.002) dim min max min max millimeters inches a 0.1142 0.1220 2.90 3.10 b 0.0512 0.0669 1.30 1.70 c 0.0354 0.0433 0.90 1.10 d 0.0098 0.0197 0.25 0.50 g 0.0335 0.0413 0.85 1.05 h 0.0005 0.0040 0.013 0.100 j 0.0040 0.0102 0.10 0.26 k 0.0079 0.0236 0.20 0.60 l 0.0493 0.0649 1.25 1.65 m 0 10 0 10 s 0.0985 0.1181 2.50 3.00 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318f-01 and -02 obsolete. new standard 318f-03. m j k on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mmqa5v6t1/d thermal clad is a registered trademark of the bergquist company. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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