View 2N3183_5526910.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

savantic semiconductor product specification silicon pnp power transistors 2N3183 description with to-3 package excellent safe operating area low collector saturation voltage applications for medium-speed switching and amplifier applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -40 v v ceo collector-emitter voltage open base -40 v v ebo emitter-base voltage open collector -5 v i c collector current -5 a p c collector power dissipation t c =25 75 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r (th) jc thermal resistance junction to case 1.17 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2N3183 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo collector-emitter sustaining voltage i c =-0.2a ;i b =0 -40 v v ce(sat) collector-emitter saturation voltage i c =-5a; i b =-1a -1.5 v v be(on) base-emitter on voltage i c =-5a ; v ce =-4v -2.0 v i ceo collector cut-off current v ce =rated v ceo ; i b =0 -5.0 ma i cbo collector cut-off current v cb =rated v cbo ; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma h fe-1 dc current gain i c =-0.3a ; v ce =-4v 30 h fe-2 dc current gain i c =-3a ; v ce =-4v 15
savantic semiconductor product specification 3 silicon pnp power transistors 2N3183 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)

▲Up To Search▲

Price & Availability of 2N3183

	To Download 2N3183 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .