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| Datasheet File OCR Text: |
| description the AMS2301 is the p-channel logic enhancement mode power , field , effect , transistor , is produced using high cell density, dmos trench techn ology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low volta ge application such as cellular phone and notebook computer power management and other ba tter powered circuits, and low in-line power loss are needed in a very small o utline surface mount package. pin configuration sot-23 1.gate 2.source 3.drain part marking sot-23 y: year code a: process code feature - 20v/-2.8a, r ds(on) = 90m-ohm (typ.) @v gs = -4.5v -20v/-2.0a, r ds(on) = 110m-ohm @v gs = -2.5v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability sot-23 package design 3 1 2 d g s 3 1 2 s01ya
poc-an htm.tsc ofcamdc |
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