document number: 94392 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 11-aug-08 1 phase control thyristors (stud version), 80 a 80ria...pbf/81ria...pbf series vishay high power products features ? hermetic glass-metal seal ? international standard ca se to-209ac (to-94) ? rohs compliant ? lead (pb)-free ? designed and qualified for industrial level typical applications ? dc motor controls ? controlled dc power supplies ? ac controllers electrical specifications product summary i t(av) 80 a to-209ac (to-94) rohs compliant major ratings and characteristics parameter test conditions values units i t(av) 80 a t c 85 c i t(rms) 125 a i tsm 50 hz 1900 60 hz 1990 i 2 t 50 hz 18 ka 2 s 60 hz 16 v drm /v rrm 400 to 1200 v t q typical 110 s t j - 40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = 125 c ma 80ria 81ria 40 400 500 15 80 800 900 120 1200 1300 www.datasheet.net/ datasheet pdf - http://www..co.kr/
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94392 2 revision: 11-aug-08 80ria...pbf/81ria...pbf series vishay high power products phase control thyristors (stud version), 80 a absolute maximum ratings parameter symbol test conditions values units maximum average on-state current at case temperature i t(av) 180 conduction, half sine wave 80 a 85 c maximum rms on-state current i t(rms) dc at 75 c case temperature 125 a maximum peak, one-cycle non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 1900 t = 8.3 ms 1990 t = 10 ms 100 % v rrm reapplied 1600 t = 8.3 ms 1675 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 18 ka 2 s t = 8.3 ms 16 t = 10 ms 100 % v rrm reapplied 12.7 t = 8.3 ms 11.7 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 180.5 ka 2 s low level value of threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.99 v high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j = t j maximum 1.13 low level value of on-state slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 2.29 m high level value of on-s tate slope resistance r t2 (i > x i t(av) ), t j = t j maximum 1.84 maximum on-state voltage v tm i pk = 250 a, t j = 25 c, t p = 10 ms sine pulse 1.60 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 200 ma typical latching current i l 400 switching parameter symbol test conditions values units maximum non-repetitive rate of rise of turned-on current di/dt t j = 125 c, v d = rated v drm , i tm = 2 x di/dt snubber 0.2 f, 15 , gate pulse: 20 v, 65 , t p = 6 s, t r = 0.5 s per jedec standard rs-397, 5.2.2.6. 300 a/s typical delay time t d gate pulse: 10 v, 15 source, t p = 6 s, t r = 0.1 s, v d = rated v drm , i tm = 50 adc, t j = 25 c 1 s typical turn-off time t q i tm = 50 a, t j = t j maximum, di/dt = - 5 a/s, v r = 50 v, dv/dt = 20 v/s, gate bias: 0 v 25 , t p = 500 s 110 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = 125 c exponential to 67 % rated v drm 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = 125 c rated v drm /v rrm applied 15 ma www.datasheet.net/ datasheet pdf - http://www..co.kr/
document number: 94392 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 11-aug-08 3 80ria...pbf/81ria...pbf series phase control thyristors (stud version), 80 a vishay high power products note ? the table above shows the increment of thermal resistance r thjc when devices operate at di fferent conduction angles than dc triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum, t p 5 ms 12 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 3 maximum peak positive gate current i gm t j = t j maximum, t p 5 ms 3a maximum peak positive gate voltage + v gm 20 v maximum peak negative gate voltage - v gm 10 maximum dc gate current required to trigger i gt t j = - 40 c maximum required gate trigger/ current/voltage are the lowest value which will tr igger all units 6 v anode to cathode applied 270 ma t j = 25 c 120 t j = 125 c 60 maximum dc gate voltage required to trigger v gt t j = - 40 c 3.5 v t j = 25 c 2.5 t j = 125 c 1.5 dc gate current not to trigger i gd t j = t j maximum maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode applied 6ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to case r thjc dc operation 0.30 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.1 mounting torque, 10 % non-lubricated threads 15.5 (137) n m (lbf in) lubricated threads 14 (120) approximate weight 130 g case style see dimensions - link at the end of datasheet to-209ac (to-94) r thjc conduction conduction angle sinusoidal conduction recta ngular conduction test conditions units 180 0.042 0.030 t j = t j maximum k/w 120 0.050 0.052 90 0.064 0.070 60 0.095 0.100 30 0.164 0.165 www.datasheet.net/ datasheet pdf - http://www..co.kr/
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94392 4 revision: 11-aug-08 80ria...pbf/81ria...pbf series vishay high power products phase control thyristors (stud version), 80 a fig. 1 - current ratings characteristics f ig. 2 - current ratings characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics 80 90 100 110 120 130 0 102030405060708090 maximum allowable case temperature (c) 30 60 90 120 180 average on-state current (a) conduc tion angle 80ria series r (dc) = 0.30 k/w thjc 70 80 90 100 110 120 130 020406080100120140 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period 80ria series r (dc) = 0.30 k/w thjc 0255075100125 maximum allowable ambient temperature (c) 0 . 6 k / w 1 k / w 2 k / w 5 k / w 3 k / w 1 . 4 k / w r = 0 . 4k / w - d e l t a r t h s a 0 10 20 30 40 50 60 70 80 90 100 110 120 0 10 20 30 40 50 60 70 80 180 120 90 60 30 rm s li m i t conduction angle maximum average on-st ate pow er loss (w) average on-state current (a) 80ria series t = 125c j 0255075100125 maximum allowable ambient temperature (c) r = 0 . 4 k / w - d e l t a r t h s a 0 . 6 k / w 1 k / w 1 . 4 k / w 2 k / w 3 k / w 5 k / w 0 20 40 60 80 100 120 140 160 180 0 20406080100120140 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) 80ria serie s t = 125c j www.datasheet.net/ datasheet pdf - http://www..co.kr/
document number: 94392 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 11-aug-08 5 80ria...pbf/81ria...pbf series phase control thyristors (stud version), 80 a vishay high power products fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics 800 1000 1200 1400 1600 1800 110100 number of eq ua l amp litud e half cyc le current pulses (n) peak half sine wave on-state current (a) at 60 hz 0.0083 s at 50 hz 0.0100 s 80ria series at any rated load condition and with rated v applied following surge. rrm initial t j = 125c 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.01 0.1 1 pu lse tra in du ra t io n ( s) versus pulse train duration. control of conduction may not be maintained. peak half sine wave on-state current (a) initial t = 125c no voltage reapplied rated v reapplied rrm j 80ria series maximum non repetitive surge current 1 10 100 1000 10000 0.511.522.533.544.55 t = 25c j instantaneous on-state current (a) in st a n t a n e o u s o n - st a t e v o lt a g e ( v ) t = 125c j 80ria series 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 sq uare wave pulse duration (s) thjc 80ria series steady state value r = 0.30 k/w (dc operation) transient thermal impedance z (k/w) thjc www.datasheet.net/ datasheet pdf - http://www..co.kr/
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94392 6 revision: 11-aug-08 80ria...pbf/81ria...pbf series vishay high power products phase control thyristors (stud version), 80 a fig. 9 - gate characteristics ordering information table 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 vgd igd (b) (a) tj=25 c tj=125 c tj=-40 c (1) (2) (3) instantaneous gate current (a) instantaneous gate voltage (v) rectangular gate pulse a) recommended load line for b) recommended load line for frequency limited by pg(av) tr<=1 s rated di/dt : 20v, 30ohms; tr<=0.5 s <=30% rated di/dt : 20v, 65ohms (1) pgm = 100w, tp = 500s (2) pgm = 50w, tp = 1ms (3) pgm = 20w, tp = 2.5ms (4) pgm = 10w, tp = 5ms device: 80ria series (4) 1 -i tav x 10 a 2 - 0 = eyelet terminals (gate and auxiliary cathode leads) 3 - ria = essential part number 4 6 - lead (pb)-free 1 = fast-on terminals (gate and auxiliary cathode leads) - voltage code x 100 = v rrm (see voltage ratings table) 5 - none = stud base 1/2"-20unf- 2 a threads m = stud base metric threads m12 x 1.75 e 6 device code 5 13 24 6 8 0 ria 120 m pbf links to related documents dimensions http://www.vishay.com/doc?95003 www.datasheet.net/ datasheet pdf - http://www..co.kr/
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners. www.datasheet.net/ datasheet pdf - http://www..co.kr/
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