MS1408 microsemi reserves the right to c hange, without notice, the specifications and info rmation contained herein. visit our web site at www.microsemi.com or contact our factory direct. description: the MS1408 is a 28 volt epitaxial silicon npn planar transistor designed for 108-152mhz am class c and fm communications. this device utilizes diffused emitter resisters to achieve vswr at rated operating conditions. absolute maximum ratings (tcase = 25 c) symbol parameter value unit v cbo collector-base voltage 65 v v ceo collector-emitter voltage 35 v v ces collector-emitter voltage 65 v v ebo emitter-base voltage 4 v i c collector current 3 a p diss power dissipation 30 w t j junction temperature + 200 c t stg storage temperature - 65 to + 150 c thermal data r th(j-c) junction-case thermal resistance 5.83 c/w features ? fm class c transistor ? frequency 136mhz ? voltage 28v ? power out 20w ? power gain 8.2db ? efficiency 55% ? common emitter rf and microwave transistors 108-152mhz applications
MS1408 microsemi reserves the right to c hange, without notice, the specifications and info rmation contained herein. visit our web site at www.microsemi.com or contact our factory direct. electrical specifications (tcase = 25 c) static value symbol test conditions min. typ. max. units bv cbo i c = 200 ma i e = 0 v 65 v bv ces i c = 200 ma v be = 0 v 65 v bv ceo i c = 200 ma i b = 0 ma 35 v bv ebo i e = 10 ma i c = 0 ma 4 v i cbo v cb = 30 v i e = 0 v 1 ma h fe v ce = 5 v i c = 200 ma 5 dynamic value symbol test conditions min. typ. max. units p out f = 136 mhz v ce = 28 v 20 w g p * f = 136 mhz v ce = 28 v 8.2 db c ob f = 1 mhz v cb = 30 v i e = 0 v 35 pf rev. b ? june 2008
MS1408 microsemi reserves the right to c hange, without notice, the specifications and info rmation contained herein. visit our web site at www.microsemi.com or contact our factory direct. package mechanical data
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