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february 2007 rev 2 1/31 31 VN5770AK-E quad smart power solid state relay for complete h bridge configurations features general features ? inrush current management by active power limitation on the high side switches ? very low stand-by current ? very low electromag netic susceptibility ? in compliance with the 2002/95/ec european directive protection ? high side drivers undervoltage shutdown ? overvoltage clamp ? output current limitation ? high and low side overtemperature shutdown ? short circuit protection ? esd protection diagnostic functions ? proportional load current sense ? thermal shutdown indication on both the high and low side switches description the VN5770AK-E is a device formed by three monolithic chips housed in a standard so-28 package: a double high side and two low side switches. the double high side is made using stmicroelectronics vipower? m0-5 technology, while the low side switches are fully protected vipower? m0-3 omnifet ii. this device is suitable to drive a dc motor in a bridge configuration as well as to be used as a quad switch for any low voltage application. the dual high side switches integrate built-in non- latching thermal shutdown with thermal hysteresis. an output current limiter protects the device in overload condition. in the case of long overload duration, the device limits the dissipated power to a safe level up to thermal shut-down intervention. an analog current sense pin delivers a current proportional to the load current (according to a known ratio) and indicates overtemperature shutdown of the relevant high side switch through a voltage flag. the low side switches have built-in non-latching thermal shutdown with thermal hysteresis, linear current limitation and overvoltage clamping. fault feedback for overtemperature shutdown of the low side switch is in dicated by the relevant input pin current consumption going up to the fault sink current flag. applications dc motor driving in full or half bridge configuration all types of resistive, inductive and capacitive loads type r ds(on) i out v cc VN5770AK-E 280m ? (1) 1. total resistance of one side in bridge configuration 8.5a (2) 2. typical current limitation value 36v so-28 table 1. order codes package tube tape and reel so-28 VN5770AK-E vn5770aktr-e www.st.com
contents VN5770AK-E 2/31 contents 1 block diagram and pin descriptio ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.1 electrical characteristics for dual high side switch . . . . . . . . . . . . . . . . . . . 9 3.2 electrical characteristics for low side switches . . . . . . . . . . . . . . . . . . . . . 15 4 application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.1 maximum demagnetization energy (v cc = 13.5v) . . . . . . . . . . . . . . . . . . 22 5 package and thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 5.1 so-28 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 6 package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 6.1 so-28 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
VN5770AK-E list of tables 3/31 list of tables table 1. order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 table 2. pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 table 3. thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 table 4. dual high side switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 table 5. low side switch. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 table 6. power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 7. switching (vcc=13v) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 8. logic input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 9. protection and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 10. current sense (8v list of figures VN5770AK-E 4/31 list of figures figure 1. block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 figure 2. configuration diagram (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 figure 3. switching time waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 4. output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 5. current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 6. off state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 7. high level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 8. input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 9. input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 10. input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 11. input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 12. on state resistance vs. tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 13. on state resistance vs. vcc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 14. undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 15. turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 16. ilimh vs. tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 17. turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 18. static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 19. derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 20. transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 21. transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 22. input voltage vs. input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 23. capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 24. output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 25. step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 26. source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 27. static drain-source on resistance vs. id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 28. static drain-source on resistance vs. input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 29. static drain-source on resistance vs. input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 30. normalized input threshold voltage vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 31. normalized on resistance vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 32. current limit vs. junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 33. typical application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 34. recommended motor operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 35. waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 36. maximum turn off current versus load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 37. so-28 pc board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 figure 38. chipset configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 figure 39. auto and mutual rthj-amb vs pcb copper area in open box free air condition . . . . . . . . . 23 figure 40. so-28 hsd thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . 25 figure 41. so-28 lsd thermal impedance junction ambient single pulse. . . . . . . . . . . . . . . . . . . . . . 25 figure 42. thermal fitting model of an h-bridge in so-28 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 43. so-28 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 figure 44. so-28 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 figure 45. tape and reel shipment (suffix ?tr?) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
VN5770AK-E block diagram and pin descriptions 5/31 1 block diagram and pin descriptions figure 1. block diagram overtemp. 1 vcc gnd input1 source1 logic driver 1 vcc clamp undervoltage clamp 1 vds limiter 1 current limiter 1 power limitation source2 driver 2 clamp 2 vds limiter 2 power limitation input2 current limiter 2 overvoltage gate linear drain3 source3 clamp current limiter control over temperature input3 overvoltage gate linear drain4 source4 clamp current limiter control over temperature input4 overtemp. 2 ids1 k ids2 k c.sense
block diagram and pin descriptions VN5770AK-E 6/31 figure 2. configuration diagram (top view) table 2. pin descriptions no name function 1, 3, 25, 28 drain 3 drain of switch 3 (low-side switch) 2 input 3 input of switch 3 (low-side switch) 4, 11 n.c. not connected 5, 10, 19, 24 v cc drain of switches 1 and 2 (high- side switches) and power supply voltage 6 gnd ground of switches 1 and 2 (high-side switches) 7 input 1 input of switch 1 (high-side switches) 8 input 2 input of switch 2 (high-side switch) 9 current sense analog current sense pin, delivers a current proportional to the load current 12, 14, 15, 18 drain 4 drain of switch 4 (low-side switch) 13 input 4 input of switch 4 (low-side switch) 16, 17 source 4 source of switch 4 (low-side switch) 20, 21 source 2 source of switch 2 (high-side switch) 22, 23 source 1 source of switch 1 (high-side switch) 26, 27 source 3 source of switch 3 (low-side switch)
VN5770AK-E maximum ratings 7/31 2 maximum ratings stressing the device above the rating listed in the ?absolute maximum ratings? table may cause permanent damage to the device. these are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. exposure to the conditions in section 2.1: absolute maximum ratings for extended periods may affect devi ce reliability. refer also to the stmicroelectronics sure program and other relevant quality document. 2.1 absolute maximum ratings table 3. thermal data symbol parameter max value unit r thj-case thermal resistance junction-lead (high-side switch) 10 c/w r thj-case thermal resistance junction-lead (low-side switch) 7 c/w r thj-amb thermal resistance junction-ambient. see figure 38 c/w table 4. dual high side switch symbol parameter value unit v cc dc supply voltage 41 v -v cc reverse dc supply voltage 0.3 v - i gnd dc reverse ground pin current 200 ma i out dc output current internally limited a - i out reverse dc output current -12 a i in dc input current -1 to 10 ma i csd dc current sense disable input current -1 to 10 ma v csense current sense maximum voltage v cc -41 +v cc v v e max maximum switching energy (single pulse) (l=3.7mh; r l =0 ? ; v bat =13.5v; t jstart =150oc; i out = i liml (typ.) ) 32 mj v esd electrostatic discharge (h uman body model: r=1.5k ?; c=100pf) - input - current sense - output - v cc 4000 2000 5000 5000 v v v v v esd charge device model (cdm-aec-q100-011) 750 v t j junction operating temperature -40 to 150 c t stg storage temperature -55 to 150 c
maximum ratings VN5770AK-E 8/31 table 5. low side switch symbol parameter value unit v dsn drain-source voltage (v inn =0v) internally clamped v v inn input voltage internally clamped v i inn input current +/-20 ma r in minn minimum input series impedance 220 ? i dn drain current internally limited a i rn reverse dc output current -12 a v esd1 electrostatic discharge (r=1.5k ? , c=100pf) 4000 v v esd2 electrostatic discharge on output pins only (r=330 ? , c=150pf) 16500 v p tot total dissipation at t c =25c 4 w t j operating junction temperature internally limited c t c case operating temperature internally limited c t stg storage temperature -55 to 150 c
VN5770AK-E electrical characteristics 9/31 3 electrical characteristics 3.1 electrical characteristi cs for dual high side switch note: values specified in th is section are for 8v < v cc < 36v; -40c < t j < 150c, unless otherwise specified (for each channel) table 6. power section symbol parameter test cond itions min. typ. max. unit v cc operating supply voltage 4.5 13 36 v v usd undervoltage shutdown 3.5 4.5 v v usdhyst undervoltage shut- down hysteresis 0.5 v r on on state resistance i out =3a; t j =25c i out =3a; t j =150c i out =3a; v cc =5v; t j =25c 160 320 210 m ? m ? m ? v clamp clamp voltage i s =20 ma 41 46 52 v i s supply current off state; v cc =13v; t j =25c; v in =v out =v sense =0v on state; v cc =13v; v in =5v; i out =0a 2 (1) 3 1. powermos leakage included 5 (1) 6 a ma i l(off) off state output current (2) 2. for each channel v in =v out =0v; v cc =13v; t j =25c v in =v out =0v; v cc =13v; t j =125c 0 0 3 5 a v f output - v cc diode voltage (2) -i out =3a; t j =150c 0.7 v table 7. switching (v cc =13v) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time r l =4.3 ? (see figure 3. )15 s t d(off) turn-off delay time r l =4.3 ? (see figure 3. )10 s (dv out /dt) on turn-on voltage slope r l =4.3 ? see figure 15 v / s (dv out /dt) off turn-off voltage slope r l =4.3 ? see figure 17. v / s w on switching energy losses during t won r l =4.3 ? (see figure 3. )0.16 mj w off switching energy losses during t woff r l =4.3 ? (see figure 3. )0.08 mj
electrical characteristics VN5770AK-E 10/31 table 8. logic input symbol parameter test conditions min. typ. max. unit v il input low level voltage 0.9 v i il low level input current v in =0.9v 1 a v ih input high level voltage 2.1 v i ih high level input current v in =2.1v 10 a v i(hyst) input hysteresis voltage 0.25 v v icl input clamp voltage i in =1ma i in =-1ma 5.5 -0.7 7v v table 9. protection and diagnostics (1) 1. to ensure long term reliability under heavy overload or s hort circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. if the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles symbol parameter test conditions min. typ. max. unit i limh dc short circuit current v cc =13v 5v VN5770AK-E electrical characteristics 11/31 figure 3. switching time waveforms i sense0 analog sense current i out =0a; v sense =0v; v in =0v; t j =-40c to 150c v in =5v; t j =-40c to 150c 0 0 1 2 a a v sense max analog sense output voltage i out =5a; r sense =3.9k ? 5v v senseh analog sense output voltage in overtemperature condition v cc =13v; r sense =3.9k ? 9v i senseh analog sense output current in overtemperature condition v cc =13v 8 ma t dsense2h delay response time from rising edge of input pin v sense <4v, 0.35a electrical characteristics VN5770AK-E 12/31 figure 4. output voltage drop limitation figure 5. current sense delay characteristics table 11. truth table conditions input output sense normal operation l h l h 0 nominal overtemperature l h l l 0 v senseh undervoltage l h l l 0 0 short circuit to gnd l h l l 0 0 short circuit to v cc l h h h 0 < nominal negative output voltage clamp ll 0 von iout vcc-vout tj=150 o c tj=25 o c tj=-40 o c von/ron(t) sense current input load current t dsense2h t dsense2l
VN5770AK-E electrical characteristics 13/31 figure 6. off state output current figure 7. high level input current tbd -50 -25 0 25 50 75 100 125 150 175 tc (c) 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 iloff (ua) off state vcc=13v vin=vout=0v -50 -25 0 25 50 75 100 125 150 175 tc (c) 0 0.5 1 1.5 2 2.5 3 3.5 4 4 .5 5 iih (ua) vin=2.1v figure 8. input clamp voltage figure 9. input low level -50 -25 0 25 50 75 100 125 150 175 tc (c) 5 5.2 5.4 5.6 5.8 6 6.2 6.4 6.6 6.8 7 v icl (v) lin=1ma -50 -25 0 25 50 75 100 125 150 175 tc (c) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v il (v) figure 10. input high level figure 11. input hysteresis voltage -50 -25 0 25 50 75 100 125 150 175 tc (c) 0 0.5 1 1.5 2 2.5 3 3.5 4 v ih (v) -50 -25 0 25 50 75 100 125 150 175 tc (c) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v ihyst (v)
electrical characteristics VN5770AK-E 14/31 figure 12. on state resistance vs. t case figure 13. on state resistance vs. v cc -50 -25 0 25 50 75 100 125 150 175 tc (c) 50 100 150 200 250 300 ron (mohm) iout=3a vcc=13v 0 5 10 15 20 25 30 35 40 vcc (v) 0 50 100 150 200 250 300 350 4 00 ron (mohm) tc=-40 c tc=25 c tc=125 c tc=150 c iout=3a figure 14. undervoltage shutdown figure 15. turn-on voltage slope -50 -25 0 25 50 75 100 125 150 175 tc (c) 0 2 4 6 8 10 12 14 16 v usd (v) -50 -25 0 25 50 75 100 125 150 175 tc (c) 0 100 200 300 400 500 600 700 800 900 1000 (dvout/dt)on (v/ms) vcc=13v ri=4.3ohm figure 16. i limh vs. t case figure 17. turn-off voltage slope tbd -50 -25 0 25 50 75 100 125 150 175 tc (c) 0 2 4 6 8 10 12 14 16 18 20 ilimh (a) vcc=13v -50 -25 0 25 50 75 100 125 150 175 tc (c) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 (dvout/dt)off (v/ms) vcc=13v ri=4.3ohm
VN5770AK-E electrical characteristics 15/31 3.2 electrical characterist ics for low side switches note: values specified in this section are for -40c < tj < 150c, unless otherwise specified table 12. off symbol parameter test conditions min typ max unit v clamp drain-source clamp voltage v in =0v; i d =1.5a 40 45 55 v v clth drain-source clamp threshold voltage v in =0v; i d =2ma 36 v v inth input threshold voltage v ds =v in ; i d =1ma 0.5 2.5 v i iss supply current from input pin v ds =0v; v in =5v 100 150 a v incl input-source clamp voltage i in =1ma i in =-1ma 6 -1.0 6.8 8 -0.3 v i dss zero input voltage drain current (v in =0v) v ds =13v; v in =0v; t j =25c v ds =25v; v in =0v 30 75 a table 13. on symbol parameter test conditions min typ max unit r ds(on) static drain-source on resistance v in =5v; i d =3a; t j =25c v in =5v; i d =3a 120 240 m ? table 14. dynamic (tj=25c, unless otherwise specified) symbol parameter test co nditions min typ max unit g fs forward transconductance v dd =13v; i d =1.5a 2.5 s c oss output capacitance v ds =13v; f=1mhz; v in =0v 150 pf table 15. switching (tj=25c, unless otherwise specified) symbol parameter test co nditions min typ max unit t d(on) turn-on delay time v dd =15v; i d =3a v gen =5v; r gen =r in minn =220 ? 200 400 ns t r rise time 1.2 2.5 s t d(off) turn-off delay time 600 1350 ns t f fall time 400 1000 ns t d(on) turn-on delay time v dd =15v; i d =3a v gen =5v; r gen =2.2k ? 0.80 2.5 s t r rise time 3.7 7.5 s t d(off) turn-off delay time 2.6 7.5 s t f fall time 2.3 7.0 s
electrical characteristics VN5770AK-E 16/31 (di/dt) on turn-on current slope v dd =15v; i d =3a v gen =5v; r gen =r in minn =220 ? 3.0 a/ s q i total input charge v dd =12v; i d =3a; v in =5v i gen =2.13ma 9.0 nc table 16. source drain diode symbol parameter test conditions min typ max unit v sd (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd =1.5a; v in =0v 0.8 v t rr reverse recovery time i sd =1.5a; di/dt=12a/ms v dd =30v; l=200 h 400 ns q rr reverse recovery charge 200 nc i rrm reverse recovery current 1.0 a table 15. switching (tj=25c, unless otherwise specified)
VN5770AK-E electrical characteristics 17/31 table 17. protection and diagnostics (-40c < t j < 150c, unless otherwise specified) symbol parameter test conditions min typ max unit i lim drain current limit v in =5v; v ds =13v 6 8.5 12 a t dlim step response current limit v in =5v; v ds =13v 10 s t jsh overtemperature shutdown 150 175 200 c t jrs overtemperature reset 135 c i gf fault sink current v in =5v; v ds =13v; t j =t jsh 10 15 20 ma e as single pulse avalanche energy starting t j =25c; v dd =24v v in =5v; r gen =r in minn =220 ? ; l=24mh 100 mj figure 18. static drain source on r esistance figure 19. derating curve tbd 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 id(a) 0 100 200 300 400 500 600 700 800 900 1000 rds(on) (mohms) tj=25oc tj=150oc tj=-40oc vin=2.5v figure 20. transconductance figure 21. transfer characteristics 00.511.522.533.544.555.5 id (a) 0 1 2 3 4 5 6 7 8 9 10 11 gfs (s) vds=13v tj=25oc tj=150oc tj=-40oc 1.522.533.544.555.56 vin (v) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 idon (a) vds=13.5v tj=150oc tj=25oc tj=-40oc
electrical characteristics VN5770AK-E 18/31 figure 22. input voltage vs. input ch arge figure 23. capacitance variations 01234567891011 qg (nc) 0 1 2 3 4 5 6 7 8 9 vin (v) vds=1v id=1.5a 0 5 10 15 20 25 30 35 vds(v) 50 100 150 200 250 300 350 c(pf) f=1mhz vin=0v figure 24. output characteristics figure 25. step response current limit tbd 012345678910 vds (v) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 id (a) vin=4v vin=5v vin=3v 5 7.5 1012.51517.52022.52527.53032.5 vdd(v) 7.5 8 8.5 9 9.5 10 10.5 11 11.5 12 12.5 13 tdlim(usec) vin=5v rg=220ohm figure 26. source-drain diode forward characteristics figure 27. static drain-source on resistance vs. id 0123456789101112 id (a) 600 650 700 750 800 850 900 950 1000 1050 1100 vsd (mv) vin=0v 00.511.522.533.54 id (a) 0 25 50 75 100 125 150 175 200 225 250 rds(on) (mohms) tj=25oc tj=150oc tj= - 40oc vin=5v
VN5770AK-E electrical characteristics 19/31 figure 28. static drain-source on resistance vs. input voltage figure 29. static drain-source on resistance vs. input voltage 3 3.5 4 4.5 5 5.5 6 6.5 vin(v) 0 25 50 75 100 125 150 175 200 225 250 275 300 rds(on) (mohms) id=3.5a id=1a id=3.5a id=1a id=3.5a id=1a tj=25oc tj=150oc tj=-40oc 3 3.5 4 4.5 5 5.5 6 6.5 vin(v) 0 25 50 75 100 125 150 175 200 225 250 rds(on) (mohms) id=1.5a tj=150oc tj=-40oc tj=25oc figure 30. normalized input threshold voltage vs. temperature figure 31. normalized on resistance vs. temperature -50 -25 0 25 50 75 100 125 150 175 tc (c) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v inth (v) vds=vin id=1ma -50 -25 0 25 50 75 100 125 150 175 tc (c) 0.6 0.8 1 1.2 1.4 1.6 1.8 ron (mohm) iout=3a vcc=13v figure 32. current limit vs. junction temperature -50 -25 0 25 50 75 100 125 150 175 tc (c) 0 2 4 6 8 10 12 ilim (a) vcc=13v vin=5v
application information VN5770AK-E 20/31 4 application information figure 33. typical application schematic figure 34. recommended motor operation m input 1 input 3 micro 5v vcc source 1 source 2 source 3 source 4 drain 3 drain 4 gnd vbatt vz 32v > 40v motor inducuctance energy recirculation control control control c d z i m m m input 2 input 4 current sense micro 5v vcc source 1 source 2 source 3 source 4 drain 3 drain 4 gnd vbatt vz 32v > 40v motor inducuctance energy recirculation control control control c d z i m mostly motor bridge drivers use a reverse battery protection diode (d) inside supply rail. this diode prevents a reverse current flow back to vbatt in case the bridge gets disabled via the logic inputs while motor inductance still carries energy. in order to prevent a hazardous overvoltage at circui t supply terminal (vcc), a blocking capacitor (c) is needed to limit the voltage overshoot. as basic orientation, 50f per 1a load current in recommended. in alternative, also a zener protection (z) is suitable. even if a reverse polarity diode is not present, it is reco mmended to use a capacitor or zener at vcc because a similar problem appears in case supply terminal of the module has intermittent electrical contact to the battery or gets disconnected while motor is operating. input 1 input 2 input 3 input 4 +i m -i m vz vcc t t c l o c k w i s e o p e r a t i o n c o u n t e r c l o c k w i s e o p e r a t i o n a c t i v e m o t o r s t o p p a s s i v e m o t o r s t o p c l o c k w i s e o p e r a t i o n flyback clamped by zener diode z flyback energy charged into capacitor c flyback spike during cross current protection time p a s s i v e m o t o r s t o p dead time to avoid cross conduction input 1 input 2 input 3 input 4 +i m -i m vz vcc t t c l o c k w i s e o p e r a t i o n c o u n t e r c l o c k w i s e o p e r a t i o n a c t i v e m o t o r s t o p p a s s i v e m o t o r s t o p c l o c k w i s e o p e r a t i o n flyback clamped by zener diode z flyback energy charged into capacitor c flyback spike during cross current protection time p a s s i v e m o t o r s t o p dead time to avoid cross conduction
VN5770AK-E application information 21/31 figure 35. waveforms sense current input normal operation undervoltage v cc v usd v usdhyst input sense current load current load current overload operation input sense current t tsd t r t j load current input load voltage sense current load current application information VN5770AK-E 22/31 4.1 maximum demagnetization energy (v cc = 13.5v) figure 36. maximum turn off current versus load inductance note: values are generated with r l =0 ? in the case of repetitive pulses, t jstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves b and c. v in , i l t demagnetization demagnetization demagnetization 0.1 1 10 100 0.01 0.1 1 10 100 l (mh) i lmax (a) a b c a = single pulse at t jstart =150oc b= repetitive pulse at t jstart =100oc c= repetitive pulse at t jstart =125oc
VN5770AK-E package and thermal data 23/31 5 package and thermal data 5.1 so-28 thermal data figure 37. so-28 pc board figure 38. chipset configuration figure 39. auto and mutual rthj-amb vs pcb copper area in open box free air condition (a) a. see figure 38 . for more detailed information see table 18 and table 19 . layout condition of rth and zth measurements (pcb fr4 area= 58mm x 58mm, pcb thickness=2mm, cu thickness=35mm, copper areas: from minimum pad layout to 16cm2). high side chip channels 1,2 low side chip low side chip channel 3 channel 4 r thb r tha r thc r thab r thac r thbc 0 10 20 30 40 50 60 0 1 2 3 4 5 6 7 cu area (refer to pcb layout) rth (?c/w) rtha rthb = rthc rthab = rthac rthbc
package and thermal data VN5770AK-E 24/31 table 18. thermal calculations in clockwise and anti-clockwise operation in steady- state mode hs 1 hs 2 ls 3 ls 4 t jhs12 t jls3 t jls4 on off off on p dhs1 x r thhs + p dls4 x r thhsls + t amb p dhs1 x r thhsls + p dls4 x r thlsls + t amb p dhs1 x r thhsls + p dls4 x r thls + t amb off on on off p dhs2 x r thhs + p dls3 x r thhsls + t amb p dhs2 x r thhsls + p dls3 x r thls + t amb p dhs2 x r thhsls + p dls3 x r thlsls + t amb table 19. thermal resistances definitions (1) 1. values dependent on pcb heatsink area r thhs = r thhs1 = r thhs2 high side chip thermal resistance junction to ambient (hs 1 or hs 2 in on state) r thls = r thls3 = r thls4 low side chip thermal resistance junction to ambient r thhsls = r thhs1ls4 = r thhs2ls3 mutual thermal resistance junction to ambient between high side and low side chips r thlsls = r thls3ls4 mutual thermal resistance junction to ambient between low side chips table 20. single pulse the rmal impedance definitions (1) 1. values dependent on pcb heatsink area z thhs high side chip thermal impedance junction to ambient z thls = z thls3 = z thls4 low side chip thermal impedance junction to ambient z thhsls = z thhs12ls3 = z thhs12ls4 mutual thermal impedance junction to ambient between high side and low side chips z thlsls = z thls3ls4 mutual thermal impedance junction to ambient between low side chips table 21. thermal calculations in transient mode (1) 1. calculation is valid in any dynamic operating condition. pd values set by user. t jhs12 z thhs x p dhs12 + z thhsls x (p dls3 + p dls4 ) + t amb t jls3 z thhsls x p dhs12 + z thls x p dls3 + z thlsls x p dls4 + t amb t jls4 z thhsls x p dhs12 + z thlsls x p dls3 + z thls x p dls4 + t amb
VN5770AK-E package and thermal data 25/31 figure 40. so-28 hsd thermal impe dance junction ambi ent single pulse figure 41. so-28 lsd thermal impedance junction ambient single pulse pulse calculation formula zth 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 time (sec) (?c/w) footprint 2 cm 2 1 cm 2 6 cm 2 hsd hslsd footprint 2 cm 2 1 cm 2 6 cm 2 zth 0.1 10 100 0.001 0.01 0.1 1 10 100 1000 time (sec) (?c/w) footprint 2 cm 2 1 cm 2 6 cm 2 footprint 2 cm 2 1 cm 2 6 cm 2 lsd lslsd z th r th z thtp 1 ? () + ? = where t p t ? =
package and thermal data VN5770AK-E 26/31 figure 42. thermal fitting model of an h-bridge in so-28 table 22. thermal parameters (1) area/island (cm 2) footprint 1 2 6 r1 (c/w) 1 r2 (c/w) 1.8 r3 (c/w) 3.5 r4 (c/w) 13.5 r5 (c/w) 10.5 r6 (c/w) 62.28 52.28 44.28 32.28 r7 (c/w) 1 r8 (c/w) 1.8 r9 (c/w) 0.24 r10 (c/w) 1.2 r11 (c/w) 3.5 r12 (c/w) 15.2 r13 (c/w) 10.5 r14 (c/w) 62.28 52.28 44.28 32.28 r15 (c/w) 0.24 r16 (c/w) 1.2 r17 (c/w) 3.5 r18 (c/w) 15.5 r19 (c/w) 10.5
VN5770AK-E package and thermal data 27/31 r20 (c/w) 62.28 52.28 44.28 32.28 r21 (c/w) 150 r22 (c/w) 150 r23 (c/w) 150 r24 (c/w) 150 52.28 44.28 32.28 c1 (ws/c) 0.0008 c2 (ws/c) 0.001 c3 (ws/c) 0.008 c5 (ws/c) 0.2 c6 (ws/c) 1.6 1.61 1.7 3.25 c7 (ws/c) 0.0008 c8 (ws/c) 0.001 c9 (ws/c) 0.00015 c10 (ws/c) 0.0005 c11 (ws/c) 0.008 c13 (ws/c) 0.2 c14 (ws/c) 1.6 1.61 1.7 3.25 c15 (ws/c) 0.00015 c16 (ws/c) 0.0005 c17 (ws/c) 0.008 c19 (ws/c) 0.2 c20 (ws/c) 1.6 1.61 1.7 3.25 1. a blank space means that the value is the same as the previous one table 22. thermal parameters (1)
package mechanical VN5770AK-E 28/31 6 package mechanical 6.1 so-28 mechanical data figure 43. so-28 package dimensions table 23. so-28 mechanical data symbol millimeters min typ max a 2.65 a1 0.10 0.30 b 0.35 0.49 b1 0.23 0.32 c0.50 c1 45 (typ.) d 17.7 18.1 e 10.00 10.65 e1.27 e3 16.51 f 7.40 7.60 l 0.40 1.27 s 8 (max.)
VN5770AK-E package mechanical 29/31 figure 44. so-28 tube shipment (no suffix) figure 45. tape and reel shipment (suffix ?tr?) base q.ty 28 bulk q.ty 700 tube length ( 0.5) 532 a3.5 b 13.8 c ( 0.1) 0.6 a c b base q.ty 1000 bulk q.ty 1000 a (max) 330 b (min) 1.5 c ( 0.2) 13 f 20.2 g (+ 2 / -0) 16.4 n (min) 60 t (max) 22.4 tape dimensions according to electronic industries association (eia) standard 481 rev. a, feb. 1986 all dimensions are in mm. tape width w 16 tape hole spacing p0 ( 0.1) 4 component spacing p 12 hole diameter d ( 0.1/-0) 1.5 hole diameter d1 (min) 1.5 hole position f ( 0.05) 7.5 compartment depth k (max) 6.5 hole spacing p1 ( 0.1) 2 top cover tape end start no components no components components 500mm min 500mm min empty components pockets sealed with cover tape. user direction of feed reel dimensions
revision history VN5770AK-E 30/31 7 revision history table 24. document revision history date revision changes june-2006 1 initial release. 16-feb-2007 2 reformatted. table 6: power section updated. table 7: switching (vcc=13v) updated. table 10: current sense (8v VN5770AK-E 31/31 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2007 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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