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?2002 fairchild semiconductor corporation hgtg12n60b3, HGTP12N60B3, hgt1s12n60b3s rev. c hgtg12n60b3, HGTP12N60B3, hgt1s12n60b3s 27a, 600v, ufs series n-channel igbts this family of mos gated high voltage switching devices combine the best features of mosfets and bipolar transistors. these devices have the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. the much lower on-state voltage drop varies only moderately between 25 o c and 150 o c. the igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: ac and dc motor controls, power supplies and drivers for solenoids, relays and contactors. formerly developmental type ta49171. symbol features ? 27a, 600v, t c = 25 o c 600v switching soa capability typical fall time. . . . . . . . . . . . . . . . 112ns at t j = 150 o c short circuit rating low conduction loss packaging jedec to-220ab (alternate version) jedec to-263ab jedec style to-247 ordering information part number package brand HGTP12N60B3 to-220ab g12n60b3 hgtg12n60b3 to-247 g12n60b3 hgt1s12n60b3s to-263ab g12n60b3 note: when ordering, use the entire part number. add the suffix 9a to obtain the to-263ab variant in tape and reel, i.e. hgt1s12n60b3s9a. c e g c e g collector (flange) g collector (flange) e collector (bottom side metal) c e g fairchild corporation igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet april 2002
?2002 fairchild semiconductor corporation hgtg12n60b3, HGTP12N60B3, hgt1s12n60b3s rev. c absolute maximum ratings t c = 25 o c, unless otherwise specified hgtg12n60b3, HGTP12N60B3, hgt1s12n60b3s units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .bv ces 600 v collector current continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 27 a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c110 12 a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 110 a gate to emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 20 v gate to emitter voltage pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v gem 30 v switching safe operating area at t j = 150 o c (figure 2) . . . . . . . . . . . . . . . . . . . . . . . ssoa 96a at 600v maximum power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 104 w linear derating factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 w/ o c reverse voltage avalanche energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . e arv 100 mj operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l package body for 10s, see tech brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t pkg 300 260 o c o c short circuit withstand time (note 2) at v ge = 12v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t sc 5 s short circuit withstand time (note 2) at v ge = 10v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t sc 10 s caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. notes: 1. pulse width limited by maximum junction temperature. 2. v ce(pk) = 360v, t j = 125 o c, r g = 25 ?. electrical specifications t c = 25 o c, unless otherwise specified parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = 250 a, v ge = 0v 600 - - v collector to emitter leakage current i ces v ce = 600v t c = 25 o c--250 a t c = 150 o c--2.0ma collector to emitter saturation voltage v ce(sat) i c = 12a v ge = 15v t c = 25 o c-1.62.1v t c = 150 o c-1.72.5v gate to emitter threshold voltage v ge(th) i c = 250 a, v ce = v ge 4.5 4.9 6.0 v gate to emitter leakage current i ges v ge = 20v - - 250 na switching soa ssoa t j = 150 o c, r g = 25 ?, v ge = 15v l = 100 h, v ce = 600v 96 - - a gate to emitter plateau voltage v gep i c = 12a, v ce = 0.5 bv ces -7.3 - v on-state gate charge q g(on) i c = 12a v ce = 300v v ge = 15v - 51 60 nc v ge = 20v - 68 78 nc current turn-on delay time t d(on)i igbt and diode at t j = 25 o c i ce = 12a v ce = 480v v ge = 15v r g = 25 ? l = 1mh test circuit (figure 17) -26 - ns current rise time t ri -23 - ns current turn-off delay time t d(off)i -150 - ns current fall time t fi -62 - ns turn-on energy (note 4) e on1 -150 - j turn-on energy (note 4) e on2 - 304 350 j turn-off energy (note 3) e off - 250 350 j hgtg12n60b3, HGTP12N60B3, hgt1s12n60b3s
?2002 fairchild semiconductor corporation hgtg12n60b3, HGTP12N60B3, hgt1s12n60b3s rev. c current turn-on delay time t d(on)i igbt and diode at t j = 150 o c i ce = 12a v ce = 480v v ge = 15v r g = 25 ? l = 1mh test circuit (figure 17) -22 - ns current rise time t ri -23 - ns current turn-off delay time t d(off)i - 280 295 ns current fall time t fi - 112 175 ns turn-on energy (note 4) e on1 -165 - j turn-on energy (note 4) e on2 - 500 525 j turn-off energy (note 3) e off - 660 800 j thermal resistance junction to case r jc --1.2 o c/w notes: 3. turn-off energy loss (e off ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). all devices were tested per jedec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method produces the true total turn-off energy loss. 4. values for two turn-on loss conditions are shown for the convenience of the circuit designer. e on1 is the turn-on loss of the igbt only. e on2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same t j as the igbt. the diode type is specified in figure 17. typical performance curves unless otherwise specified figure 1. dc collector current vs case temperature figure 2. minimum switching safe operating area electrical specifications t c = 25 o c, unless otherwise specified (continued) parameter symbol test conditions min typ max units t c , case temperature ( o c) i ce , dc collector current (a) 50 5 0 20 10 15 25 30 v ge = 15v 25 75 100 125 150 v ce , collector to emitter voltage (v) 50 700 30 0 i ce , collector to emitter current (a) 10 20 300 400 200 100 500 600 40 0 60 70 80 90 100 t j = 150 o c, r g = 25 ? , v ge = 15v, l = 100 h hgtg12n60b3, HGTP12N60B3, hgt1s12n60b3s
?2002 fairchild semiconductor corporation hgtg12n60b3, HGTP12N60B3, hgt1s12n60b3s rev. c figure 3. operating frequency vs collector to emitter current figure 4. short circuit withstand time figure 5. collector to emitter on-state voltage figure 6. collector to emitter on-state voltage figure 7. turn-on energy loss vs collector to emitter current figure 8. turn-off energy loss vs collector to emitter current typical performance curves unless otherwise specified (continued) t c v ge 110 o c 10v 15v 15v 75 o c 110 o c f max , operating frequency (khz) 2 i ce , collector to emitter current (a) 10 3 1 100 30 t j = 150 o c, r g = 25 ? , l = 1mh, v ce = 480v 10 20 300 75 o c 10v f max1 = 0.05 / (t d(off)i + t d(on)i ) r ?jc = 1.2 o c/w, see notes p c = conduction dissipation (duty factor = 50%) f max2 = (p d - p c ) / (e on2 + e off ) v ge , gate to emitter voltage (v) i sc , peak short circuit current (a) t sc , short circuit withstand time ( s) 10 11 12 13 14 15 2 4 6 8 12 16 10 30 40 50 60 70 80 100 t sc i sc v ce = 360v, r g = 25 ? , t j = 125 o c 14 90 024 v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 10 20 30 6810 60 50 40 t c = -55 o c t c = 150 o c pulse duration = 250 s duty cycle <0.5%, v ge = 10v t c = 25 o c 70 i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 100 120 140 160 180 024 0 40 80 6810 60 20 duty cycle <0.5%, v ge = 15v pulse duration = 250 s t c = 150 o c t c = -55 o c t c = 25 o c e on , turn-on energy loss (mj) 2.5 1.5 i ce , collector to emitter current (a) 2.0 1.0 0.5 20 10 r g = 25 ? , l = 1mh, v ce = 480v t j = 25 o c, t j = 150 o c, v ge = 10v t j = 25 o c, t j = 150 o c, v ge = 15v 30 25 15 5 3.0 0 i ce , collector to emitter current (a) e off , turn-off energy loss (mj) 0 0.5 25 15 10 20 30 5 1.0 2.5 r g = 25 ? , l = 1mh, v ce = 480v t j = 150 o c; v ge = 10v or 15v t j = 25 o c; v ge = 10v or 15v 2.0 1.5 hgtg12n60b3, HGTP12N60B3, hgt1s12n60b3s
?2002 fairchild semiconductor corporation hgtg12n60b3, HGTP12N60B3, hgt1s12n60b3s rev. c figure 9. turn-on delay time vs collector to emitter current figure 10. turn-on rise time vs collector to emitter current figure 11. turn-off delay time vs collector to emitter current figure 12. fall time vs collector to emitter current figure 13. transfer characteristic figure 14. gate charge waveform typical performance curves unless otherwise specified (continued) i ce , collector to emitter current (a) t di , turn-on delay time (ns) 20 15 10 20 30 5 25 30 35 40 45 50 r g = 25 ? , l = 1mh, v ce = 480v t j = 25 o c, t j = 150 o c, v ge = 10v t j = 25 o c, t j = 150 o c, v ge = 15v 25 55 i ce , collector to emitter current (a) t ri , rise time (ns) 10 25 0 50 75 125 100 30 5 150 25 20 15 r g = 25 ? , l = 1mh, v ce = 480v t j = 25 o c and t j = 150 o c, v ge = 15v t j = 25 o c, t j = 150 o c, v ge = 10v 10 15 30 5 125 250 300 25 20 100 200 150 175 225 275 i ce , collector to emitter current (a) t d(off)i , turn-off delay time (ns) r g = 25 ? , l = 1mh, v ce = 480v t j = 150 o c, v ge = 10v, v ge = 15v t j = 25 o c, v ge = 10v, v ge = 15v i ce , collector to emitter current (a) t fi , fall time (ns) 10 15 30 5 60 80 100 120 140 25 20 70 90 110 130 t j = 150 o c, v ge = 10v, v ge = 15v r g = 25 ? , l = 1mh, v ce = 480v t j = 25 o c, v ge = 10v or 15v i ce , collector to emitter current (a) 0 20 40 60 80 100 578910 6 v ge , gate to emitter voltage (v) t c = 150 o c pulse duration = 250 s 11 12 13 14 15 120 t c = -55 o c 140 160 180 4 duty cycle <0.5%, v ce = 10v t c = 25 o c q g , gate charge (nc) 20 0 12 15 9 6 3 010 515 30 v ge , gate to emitter voltage (v) i g (ref) = 1ma, r l = 25 ? , t c = 25 o c v ce = 200v v ce = 400v v ce = 600v 35 40 45 50 25 hgtg12n60b3, HGTP12N60B3, hgt1s12n60b3s
?2002 fairchild semiconductor corporation hgtg12n60b3, HGTP12N60B3, hgt1s12n60b3s rev. c figure 15. capacitance vs collector to emitter voltage figure 16. normalized transient thermal response, junction to case figure 17. inductive switching test circuit figure 18. switching test waveforms typical performance curves unless otherwise specified (continued) v ce , collector to emitter voltage (v) 0 5 10 15 20 25 0 c, capacitance (nf) 0.50 1.00 1.50 2.00 2.50 c ies c oes c res frequency = 1mhz t 1 , rectangular pulse duration (s) 10 -5 10 -3 10 0 10 1 10 -4 10 -1 10 -2 10 0 z jc , normalized thermal response 10 -1 10 -2 duty factor, d = t 1 / t 2 peak t j = p d x z jc x r jc + t c t 1 t 2 p d single pulse 0.5 0.2 0.1 0.05 0.02 0.01 r g = 25 ? l = 1mh v dd = 480v + - HGTP12N60B3d t fi t d(off)i t ri t d(on)i 10% 90% 10% 90% v ce i ce v ge e off e on2 hgtg12n60b3, HGTP12N60B3, hgt1s12n60b3s
?2002 fairchild semiconductor corporation hgtg12n60b3, HGTP12N60B3, hgt1s12n60b3s rev. c hgtg12n60b3, HGTP12N60B3, hgt1s12n60b3s handling precautions for igbts insulated gate bipolar transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static charge built in the handler?s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precautions are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ?eccosorbd? ld26? or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are essentially capacitors. circuits that leave the gate open-circuited or floating should be avoided. these conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required an external zener is recommended. operating frequency information operating frequency information for a typical device (figure 3) is presented as a guide for estimating device performance for a specific application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 5, 6, 7, 8, 9 and 11. the operating frequency plot (figure 3) of a typical device shows f max1 or f max2 ; whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is defined by f max1 = 0.05/(t d(off)i + t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. other definitions are possible. t d(off)i and t d(on)i are defined in figure 18. device turn-off delay can establish an additional frequency limiting condition for an application other than t jm . t d(off)i is important when controlling output ripple under a lightly loaded condition. f max2 is defined by f max2 = (p d - p c )/(e off + e on2 ). the allowable dissipation (p d ) is defined by p d = (t jm - t c )/r jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 3) and the conduction losses (p c ) are approximated by p c =(v ce xi ce )/2. e on2 and e off are defined in the switching waveforms shown in figure 18. e on2 is the integral of the instantaneous power loss (i ce x v ce ) during turn-on and e off is the integral of the instantaneous power loss (i ce xv ce ) during turn-off. all tail losses are included in the calculation for e off ; i.e., the collector current equals zero (i ce = 0).

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