agr21 180ef 180 w , 2. 1 10 ghz ?2.17 0 ghz, n-channe l e-m ode, la teral mosfet introdu ction t he ag r21 180e f i s a hi gh- v o lt a ge, gol d- met a li ze d, la ter a l l y di f f us ed m e t a l ox id e s e m i c ond uc tor ( l dmo s ) rf po wer tr ans i s to r sui t ab le for wid eba nd c ode d i v i s i o n mu lti p l e ac ce ss ( w - cdma ) , si ngl e an d mu lti c a r r i er c l as s ab wi r e les s ba se st a t io n po wer am pli f i e r app li ca tio n s . f i gu r e 1 . agr2 1 1 8 0 e f ( f la nge d ) pa c k a g e featu res t y pi cal pe r f or man c e for two c a r r i e r 3g p p w - cdma s y s t em s. f 1 = 213 5 m h z and f 2 = 21 45 m h z with 3.8 4 mh z c h a nne l b andw id th ( b w ) , adj ac ent ch ann el bw = 3.84 mhz a t f 1 ? 5 m h z a nd f 2 + 5 m h z. t h i r d - o r d e r di sto r tion is me as ur ed ove r 3.84 mhz b w at f 1 ? 10 mhz and f 2 + 10 mhz . t y pi c a l pea k- to- a v e r a g e ( p / a ) r a ti o of 8.5 d b a t 0. 01% (prob abi l i ty ) ccdf: ? o u t put powe r : 38 w . ? p o we r gai n: 1 4 db . ? ef f i ci en cy : 2 6 % . ? i m 3: ?36 dbc . ? ac pr : ?39 d b c. ? re tur n l o s s : ?12 db . hig h - r e l i abi li ty , gol d- me t a li z a ti on p r o c e s s . hot c a r r i er i n je cti o n ( hci ) i ndu ce d bia s d r i f t of < 5 % ov er 20 ye ar s. inte r n al ly ma tc h ed. hig h ga in , ef fic i enc y , and li nea r i ty . inte gr ated e s d p r o t ec tio n . dev i c e can wi ths t and a 1 0 :1 vo lt a ge s t an din g wa ve r a tio ( v s w r ) a t 28 vd c , 214 0 m h z , 1 80 w o u tpu t pow er pul se d 4 s a t 10 % du ty . lar ge s i gn al imp eda nc e p a r a mete r s a v a i l abl e. t a b l e 1. t h e r m al ch a r ac t e ris t ic s t a ble 2 . abs o l u te m a x i mum ra tings * * s t ress e s i n exc e ss of t he absolut e m a xim u m rat i ngs ca n caus e perm anent dam age t o t he device. t h e s e are absolut e st r e ss rat - ings only . f unct i o nal operat ion of t he device i s not im pli ed at t hese or any ot her condit i ons in e xcess of t hose given in t he operat ional se ct ions of t he dat a sheet . expos ure t o absolut e m a ximum rat i ngs f o r ext ended periods can advers e l y af f e c t devic e reliabili t y . t a b l e 3. e s d rat i n g * * alt hough el ec t ros t a t i c di s c harge (e sd) prot ect i on circ ui t r y has been designed i n t o t h is device, pr oper p recaut i o ns m u st be t a ken t o avoid ex posure t o e s d and elec t r ical overs t res s (eo s) during all handling, asse mbly , and t e st operat ions. ag ere em pl oy s a hum an-body m odel (hb m), a m a chine m odel ( mm ), and a c harged-dev i c e m odel (c dm) qualif icat ion requ i r ement in order t o det erm i ne es d-sus cept ibi lit y limit s and pr ot ect i on design ev aluat ion. es d volt ag e t h res holds are depe ndent on t he circ ui t p a ramet e rs used in eac h of t he models, as def ined by je dec's je sd22- a1 14b (h bm) , jes d 22-a 1 15a (m m), and je sd22- c101a (cdm ) s t anda rds. cau ti o n : m o s d evi ces are su scep t i b l e to d a mag e fro m el ec- tro s t a ti c ch arg e . reaso n a b l e p r ecau ti o n s i n h a n - d l i n g an d p ackag i n g mo s d evi ces sh o u l d b e ob s e r v e d . 375d? 03, style 1 pa r a m e te r s ym v a l u e u ni t the r m a l r e si st a n c e , j u n c ti on to ca s e r ? jc 0. 3 5 c/w pa ra m e te r s ym v a l u e u ni t dr ain - s o u r c e v o l t age v ds s 65 v d c g a te- s our c e v o lt a g e v gs ? 0 . 5, 15 vd c t o t a l d i ss ip a t io n at t c = 25 cp d 50 0 w der a te a bov e 25 c ? 2.8 6 w / c o p er ati ng j unc tio n t e mpe r a - tur e t j 20 0 c s t o r a ge t e mp er atur e ran g e t st g ? 6 5 , 150 c a g r 2 1 180e f m in imu m ( v ) c la ss hbm 500 1 b mm 50 a cdm 100 0 4 peak devices
180 w, 2.110 ghz ? 2.170 ghz, n-channel e-mode, lateral mosfet AGR21180EF electrical characteristics recommended operating conditions apply unless otherwise specified: t c = 30 c. table 4. dc characteristics table 5. rf characteristics * 3gpp w-cdma, typical p/a ratio of 8.5 db at 0.01% ccdf, f1 = 2135.0 mhz, and f2 = 2145 mhz. v dd = 28 vdc, i dq = 2 x 800 ma, and p out = 38 w average. nominal operating voltage 28 vdc. qualified for a maximum operating voltage of 32 vdc 0.5 v. parameter symbol min typ max unit off characteristics drain-source breakdown voltage (v gs = 0, i d = 300 a) v (br)dss 65 ?? vdc gate-source leakage current (v gs = 5 v, v ds =0v) i gss ?? 6 adc zero gate voltage drain leakage current (v ds = 28 v, v gs =0v) i dss ?? 18 adc on characteristics forward transconductance (v ds = 10 v, i d = 1 a) g fs ? 12 ? s gate threshold voltage (v ds =10v, i d = 600 a) v gs(th) 2.8 3.4 4.0 vdc gate quiescent voltage (v ds = 28 v, i d = 2 x 800 ma) v gs(q) 3.0 3.7 4.6 vdc drain-source on-voltage (v gs =10v, i d = 1 a) v ds(on) ? 0.08 ? vdc parameter symbol min typ max unit dynamic characteristics reverse transfer capacitance (v ds =28v, v gs = 0, f = 1.0 mhz) (this part is internally matched on both the input and output.) c rss ? 4.0 ? pf functional tests (in agere systems supplied test fixture) common-source amplifier power gain* g ps 13 14 ? db drain efficiency* 23 26 ? % third-order intermodulation distortion* (im3 distortion measured over 3.84 mhz bw @ f1 ? 10 mhz and f2 + 10 mhz) im3 ?? 36 ? 33 dbc adjacent channel power ratio* (acpr measured over bw of 3.84 mhz @ f1 ? 5 mhz and f2 + 5 mhz) acpr ?? 39 ? 36 dbc input return loss* irl ?? 13 ? 10 db power output, 1 db compression point, pulsed 4 s at 10% duty. (v dd = 28 v, f c = 2140.0 mhz) p 1db 160 200 ? w output mismatch stress (v dd = 28 v, p out = 180 w (pulsed 4 s at 10% duty), i dq = 2 x 800 ma, f c = 2140.0 mhz vswr = 10:1; [all phase angles]) no degradation in output power. 400 200 (in supplied test fixture)
AGR21180EF 180 w, 2.110 ghz ? 2.170 ghz, n-channel e-mode, lateral mosfet test circuit illustrations a. schematic parts list: microstrip line: z1, z20: 1.079 in. x 0.065 in.; z2, z19: 0.914 in. x 0.112 in.; z3: 0.100 in. x 0.065 in.; z4: 1.814 in. x 0.065 in.; z5, z6: 0.340 in. x 0.065 in.; z7, z8: 0.455 in. x 0.600 in.; z9, z10: 0.835 in. x 0.035 in.; z11, z12: 0.510 in. x 0.645 in.; z13, z14: 0.585 in. x 0.050 in.; z15, z16: 0.089 in. x 0.166 in.; z17: 2.006 in. x 0.065 in.; z18: 0.292 in. x 0.065 in. atc ? chip capacitor: c1, c2, c3, c4: 20 pf 100b200jw500x; c5, c6, c7, c8: 5.6 pf 100b5r6bw500x (side mounted); c13, c14: 1000 pf 100b102jca500x. murata? capacitor: c9, c10: 2.2 f, 50 v grm43er71h225ka01l c15, c16: 4.7 f, 50 v grm55er7h475ka01 sprague ? tantalum surface-mount chip capacitor: c11, c12, c17, c18: 15 f, 35 v. 1206 size chip resistor: r1, r2: 4.7 ? ; r3, r4: 560 k ? ; r5, r6 470 k ? . fair-rite ? ferrite bead: l1, l2 2743019447. taconic ? orcer rf-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. b. component layout figure 2. test circuit dut r1 r3 r5 z9 z1 z2 c7 v gg v dd c9 l1 c5 z3 c1 z5 z4 c2 z6 z8 z7 r2 r6 v gg c6 z10 z18 c4 z16 z12 z17 c3 z15 z11 z20 z19 out + c13 c15 c8 v dd c14 c16 c18 z14 z13 1a 1b 3 2a 2b pins: 1a. drain 1b. drain 2a. gate 2b. gate 3. source + c17 + in c11 + l2 r4 c12 + c10 in c2 c1 r5 r1 l1 r3 c11 c6 c8 c14 c16 c9 c10 r2 l2 r4 r6 c12 c18 c4 c3 c5 c7 c15 c13 out c17
180 w, 2.110 ghz ? 2.170 ghz, n-channel e-mode, lateral mosfet AGR21180EF typical performance characteristics (optimally tuned for 28 vds, 2 x 800 ma i dq , p out = 2 w-cdma 38 w average operation.) z s = test circuit impedance as measured from gate to gate, balanced configuration. z l = test circuit impedance as measured from drain to drain, balanced configuration. figure 3. series equivalent balanced input and output impedances mhz (f) z s ? ( complex source impedance ) z l ? (complex optimum load impedance) 2110 (f1) 4.02 ? j7.92 3.92 ? j6.59 2140 (f2) 3.98 ? j7.73 3.79 ? j6.32 2170 (f3) 3.80 ? j7.63 3.67 ? j6.12 0.1 0.1 0.1 0.2 0.2 0.3 0.3 0.4 0.4 0.5 0.5 0.6 0.6 0.7 0.7 0.8 0.8 0.9 0.9 1.0 1.0 1.2 1.2 1.4 1.4 1.6 1.6 1.8 1.8 2.0 2.0 3.0 3.0 4.0 4.0 5.0 5.0 10 10 10 20 20 20 50 50 50 0.2 0.2 0.2 0.4 0.4 0.4 0.6 0.6 0.6 0.8 0.8 0.8 1.0 1.0 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140 -150 -160 170 -170 180 90 -90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.2 0.21 0.22 0.23 0.23 0.24 0.24 0.25 0.25 0.26 0.26 0.27 0.27 0.28 0.29 0.3 0.31 0.32 0.33 0.34 0.35 0.36 0.37 0.38 0.39 0.4 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 0.48 0.49 0.49 0.0 0.0 a n g l e o f t r a n s m i s s i o n c o e f f i c i e n t i n d e g r e e s a n g l e o f r e f l e c t i o n c o e f f i c i e n t i n d e g r e e s e > w a v e l e n g t h s t o w a r d < e w a v e l e n g t h s t o w a r d l o a d < e i n d u c t c a p a c i t i v e r e a c t a n c e c o m p o n e n t ( - j x / z o ) , o r i n d u c t i v e s u s c e p t a n c e ( - j b / y o ) resistance component (r/zo), or conductance component (g/yo) f z s f3 f1 z l f3 f1 z 0 = 10 ? dut 1a 1b 3 2a 2b + + z s z l ? ? pins: 1a. drain 1b. drain 2a. gate 2b. gate 3. source
AGR21180EF 180 w, 2.110 ghz ? 2.170 ghz, n-channel e-mode, lateral mosfet typical performance characteristics (continued) test conditions: 28 v ds , i dq = 1600 ma. two w-cdma carriers, f1 = 2135 mhz and f2 = 2145 mhz each carrier has 8.98 db p/a ratio @ 0.01% ccdf, 3.84 mhz channel bw (cbw) . figure 4. power gain, drain efficiency, acpr, and im3 vs. output power (2 w-cdma carrier data) test conditions: 28 v ds , i dq = 1600 ma, p out = 38 w (average). two w-cdma carriers, each carrier has 8.98 db p/a @ 0.01% probability (ccdf), f1 = f test - 5 mhz and f2 = f test + 5 mhz , 3.84 mhz cbw. figure 5. power gain, drain efficiency, acpr, im3, and irl vs. frequency (2 w-cdma signal data) 0 5 10 15 20 25 30 35 40 45 1 10 100 p out (w, average) ? (%), g ps (db) -70 -60 -50 -40 -30 -20 -10 0 acpr (dbc), im3 (dbc) g ps ? acpr im3 0 5 10 15 20 25 30 2040 2070 2100 2130 2160 2190 2220 2250 f test (mhz) ? (%), g ps (db) -42 -35 -28 -21 -14 -7 0 acpr (dbc), im3 (dbc), irl (db) acpr im3 irl g ps ?
180 w, 2.110 ghz ? 2.170 ghz, n-channel e-mode, lateral mosfet AGR21180EF typical performance characteristics (continued) test conditions: 28 v ds , i dq = 1600 ma, 2140 mhz. figure 6. power gain and drain efficiency vs. output power (cw signal data) test conditions: 28 v ds , i dq = 1600 ma. f1 = 2135 mhz and f2 = 2145 mhz. figure 7. im3, im5, and im7 vs. output power (2 cw signal data) 9 10 11 12 13 14 15 1 10 100 1000 p out (w) g ps (db) 0 10 20 30 40 50 60 ? (%) g ps ? -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 1 10 100 1000 p out (w, pep) im3, im5, and im7 (dbc) z 0 5 10 15 20 25 30 35 40 45 50 ? (%) im5 ? im7 im3
AGR21180EF 180 w, 2.110 ghz ? 2.170 ghz, n-channel e-mode, lateral mosfet typical performance characteristics (continued) test conditions: 28 v ds , i dq = 1200 ma to 2000 ma in 200 ma steps. f1 = 2135 mhz and f2 = 2145 mhz. figure 8. im3 vs. output power at 1200 ma to 2000 ma, 200 ma steps (2 cw signal data) test conditions: 28 v ds , i dq = 1200 ma to 2000 ma in 200 ma steps. f1 = 2135 mhz and f2 = 2145 mhz. figure 9. power gain vs. output power at 1200 ma to 2000 ma, 200 ma steps (2 cw signal data) -70 -60 -50 -40 -30 -20 -10 0 1 10 100 1000 p out (w, pep) im3 (dbc) 2000 ma 1800 ma 1600 ma 1400 ma 1200 ma 11.5 12 12.5 13 13.5 14 14.5 15 1 10 100 1000 gain (db) 2000 ma 1800 ma 1600 ma 1400 ma 1200 ma
180 w, 2.110 ghz ? 2.170 ghz, n-channel e-mode, lateral mosfet AGR21180EF typical performance characteristics (continued) test conditions: i dq = 1600 ma, p out = 170 w peak envelope power (pep). f1 = 2135 mhz and f2 = 2145 mhz. figure 10. im3 and drain efficiency vs. v ds (2 cw signal data) test conditions: 28 v ds , i dq = 1600 ma, p out = 170 w (pep). f center = 2140 mhz, f1 = f center - ? f/2 mhz, f2 = f center - ? f/2 mhz. figure 11. intermodulation products vs. tone separation (2 cw signal data) 33 34 35 36 37 38 39 40 41 42 43 23 24 25 26 27 28 29 30 31 v ds (v) ? (%) -31 -30 -29 -28 -27 -26 -25 -24 -23 -22 -21 im3 (dbc) ? im3 -60 -50 -40 -30 -20 -10 0 0.01 0.1 1 10 100 tone separation ( ? f, mhz) imd (dbc) im7 im3 im5
AGR21180EF 180 w, 2.110 ghz ? 2.170 ghz, n-ch annel e-mode, lateral mosfet typical performance characteristics (continued) figure 12. spectral plot 20 10 0 -10 -20 -30 -40 -50 -60 -70 -80 carrier 2.1625 ghz 5 mhz span 50 mhz 2 carrier w-cdma 3gpp, p/a = 8.5 db @ 0.01% ccdf 10 mhz spacing, 3.84 mhz cbw, p out = 38 w, v dd = 28 v, idq = 1600 ma f1 f2 imd3 imd3 acpr acpr
180 w, 2.110 ghz ? 2.170 ghz, n-channel e-mode, lateral mosfet AGR21180EF package dimensions all dimensions are in inches. tolerances are 0.005 in. unless specified. label notes: m before the part number denotes model program. x before the part number denotes engineering prototype. the last two letters of the part number denote wafer technology and package type. yywwll is the date code including place of manufacture: year year work week (yyww), ll = location (al = allentown, pa; bk = ban gkok, thailand). xxxxx = five-digit wafer lot number. zzzzzzz = seven-digit assembly lot number on production parts. zzzzzzzzzzzz = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. pins: 1a. drain 1b. drain 2a. gate 2b. gate 3. source 1a 1b 2a 2b 3 agr19k180u yywwll xxxxx zzzzzzz peak devices agr21180xf yywwll xxxxx zzzzzzz
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