document number: 94547 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 11-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 power mosfet, 38 a FA38SA50LCP vishay semiconductors features ? fully isolated package ? easy to use and parallel ? low on-resistance ? dynamic dv/dt rating ? fully avalanche rated ? simple drive requirements ? low drain to ca se capacitance ? low internal inductance ? ul pending ? compliant to rohs directive 2002/95/ec ? designed for industrial level description third generation power mosfet s from vishay hpp provide the designer with the best co mbination of fast switching, ruggedized device design , low on-resistance and cost-effectiveness. the sot-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 w. the low thermal resistance of the sot-227 contribute to its wide acceptance throughout the industry. notes (1) repetitive rating ; pulse width limited by maximum junction temperature (see fig. 11) (2) starting t j = 25 c, l = 0.80 mh, r g = 25 , i as = 38 a (see fig. 12) (3) i sd 38 a, di/dt 410 a/s, v dd v (br)dss , t j 150 c product summary v dss 500 v r ds(on) 0.13 i d 38 a type modules - mosfet package sot-227 sot-227 absolute maximum ratings parameter symbol test conditions max. units continuous drain current at v gs 10 v i d t c = 25 c 38 a t c = 100 c 24 pulsed drain current i dm (1) 150 power dissi pation p d t c = 25 c 500 w linear derating factor 4.0 w/c gate to source voltage v gs 20 v single pulse avalanche energy e as (2) 580 mj avalanche current i ar (1) 38 a repetitive avalanche energy e ar (1) 50 mj peak diode recovery dv/dt dv/dt (3) 10 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c insulation withstand voltage (ac-rms) v iso 2.5 kv mounting torque m4 screw 1.3 nm
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94547 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 11-may-10 FA38SA50LCP vishay semiconductors power mosfet, 38 a note (1) pulse width 300 s, duty cycle 2 % notes (1) repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11) (2) pulse width 300 s, duty cycle 2 % thermal resistance parameter symbol typ. max. units junction to case r thjc -0.25 c/w case to sink, flat , greased surface r thcs 0.05 - electrical characteristcs (t j = 25 c unless otherwise noted) parameter symbol test condition s min. typ. max. units drain to source breakdown voltage v (br)dss v gs = 0 v, i d = 1.0 ma 500 - - v breakdown voltage temperature coefficient v (br)dss / t j reference to 25 c, i d = 1 ma - 0.66 - v/c static drain to so urce on-resistance r ds(on) (1) v gs = 10 v, i d = 23 a - - 0.13 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 v forward transconductance g fs v ds = 25 v, i d = 23 a 22 - - s drain to source leakage current i dss v ds = 500 v, v gs = 0 v - - 50 a v ds = 400 v, v gs = 0 v, t j = 125 c - - 500 gate to source forward leakage i gss v gs = 20 v - - 200 na gate to source reverse leakage v gs = - 20 v - - - 200 total gate charge q g i d = 38 a v ds = 400 v v gs = 10 v; see fig. 6 and 13 (1) - 280 420 nc gate to source charge q gs -3755 gate to drain (" miller") charge q gd - 150 220 turn-on delay time t d(on) v dd = 250 v i d = 38 a r g = 10 (??????) r d = 8 , see fig. 10 (1) -42- ns rise time t r -340- turn-off delay time t d(off) -200- fall time t f -330- internal source inductance l s between lead, and center of die contact -5.0-nh input capacitance c iss v gs = 0 v v ds = 25 v f = 1.0 mhz, see fig. 5 - 6900 - pf output capacitance c oss - 1600 - reverse transfer capacitance c rss -580- source-drain ratings and characteristics parameter symbol test conditio ns min. typ. max. units continuous so urce current (body diode) i s mosfet symbol showing the inte gral reverse p-n junction diode. --38 a pulsed source current (body diode) i sm (1) - - 150 diode forward voltage v sd (2) t j = 25 c, i s = 38 a, v gs = 0 v - - 1.3 v reverse recovery time t rr t j = 25 c, i f = 38 a; di/dt = 100 a/s (2) - 830 1300 ns reverse recovery charge q rr -1522c forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s + l d ) s d g
document number: 94547 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 11-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 FA38SA50LCP power mosfet, 38 a vishay semiconductors fig. 1 - typical output characteristics fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature fig. 5 - typical capacitance vs. drain to source voltage fig. 6 - typical gate charge vs. gate to source voltage 1 10 100 1000 0 0 1 0 1 1 v , drain-to-source voltage (v) 20s pulse w idth t = 25c c a 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ds i d , drain-to-source current (a) 1 10 100 1000 0 0 1 0 1 1 v , drain-to-source voltage (v) 20s pulse w idth t = 25c c a 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ds i d , drain-to-source current (a) 10 100 1000 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 4 5 6 7 8 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 38a 1 10 100 0 2000 4000 6000 8000 10000 12000 14000 16000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 80 160 240 320 400 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 38a v = 100v ds v = 250v ds v = 400v ds
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94547 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 11-may-10 FA38SA50LCP vishay semiconductors power mosfet, 38 a fig. 7 - typical source drain diode forward voltage fig. 8 - maximum safe operating area fig. 9 - basic gate charge waveform fig. 10 - gate charge test circuit fig. 11 - switching time test circuit fig. 12 - switching time waveforms 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 1 10 100 1000 10000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms q g q gs q gd v g charge 10v d.u.t. v ds i d i g 3 ma v gs .3 f 50 k .2 f 12 v current regulator same type as d.u.t. current sampling resistors + - pulse width 1 s duty factor 0.1 % d.u.t. 10 v + - v ds r d v dd r g v gs v ds 90% 0% gs t d(on) t r t d(off) t f
document number: 94547 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 11-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 FA38SA50LCP power mosfet, 38 a vishay semiconductors fig. 13 - maximum effective transient thermal impedance, junction to case fig. 14 - unclamped inductiv e test circuit fig. 15 - un clamped induct ive waveforms fig. 16 - maximum avalanche energy vs. drain current 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response) 0.01 d.u.t l + - driver a 15 v 20 v r g v ds i as t p v dd t p v (br)dss i as 25 50 75 100 125 150 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 17a 24a 38a
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94547 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 11-may-10 FA38SA50LCP vishay semiconductors power mosfet, 38 a fig. 17 - peak diode recovery dv/dt test circuit fig. 18 - for n-channel power mosfets + - + + + - - - ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t. circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer 1 2 4 3 r g v dd p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period * v gs = 5v for logic level devices *
document number: 94547 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 11-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 FA38SA50LCP power mosfet, 38 a vishay semiconductors ordering information table circuit configuration circuit circuit configuration code circuit drawing single switch no diode s 1 - power mosfet 2 - generation 3, mosfet silicon, dbc construction 3 - current rating (38 = 38 a) 4 - single switch (see circuit configuration table) 5 - sot-227 6 - voltage rating (50 = 500 v) 8 7 - low charge - p = lead (pb)-free device code 5 13 24 678 f a 38 s a 50 lc p s (1-4) d(3) g (2) lead a ss ignment s d g s 3 2 4 1 links to related documents dimensions www.vishay.com/doc?95036 packaging information www.vishay.com/doc?95037
document number: 95036 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 28-aug-07 1 sot-227 outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensioning and toleranc ing per ansi y14.5m-1982 ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 4 12 3 12.50 (0.492) 7.50 (0.295) ? 4.40 (0.173) ? 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 6.25 (0.246) 25.70 (1.012) 25.20 (0.992) -b- r full chamfer 2.00 (0.079) x 45 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303) 4 x 2.10 (0.082) 1.90 (0.075) -c- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) mmm 0.25 (0.010) ca b 4 x m4 nuts
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