1994. 3. 23 1/1 semiconductor technical data KTC3198L epitaxial planar npn transistor revision no : 0 low noise amplifier application. features excellent h fe linearity : h fe (2)=100(typ.) at v ce =6v, i c =150ma : h fe (i c =0.1ma)/h fe (i c =2ma)=0.95(typ.). low noise : nf=0.2db(typ.). f=(1khz). complementary to kta1266l. (o,y,gr class) maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 2. collector 3. base + _ electrical characteristics (ta=25 1 ) note : h fe (1) classification o:70 140, y:120 240, gr:200 400, bl:300~700 characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma emitter current i e -150 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =60v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe (1) (note) v ce =6v, i c =2ma 70 - 700 h fe (2) v ce =6v, i c =150ma 25 100 - collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - 0.1 0.25 v base-emitter saturation voltage v be(sat) i c =100ma, i b =10ma - - 1.0 v transition frequency f t v ce =10v, i c =1ma 80 - - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 2.0 3.0 pf base intrinsic resistance rbb? v cb =10v, i e =1ma, f=30mhz - 50 - u noise figure nf(1) v ce =6v, i c =0.1ma, f=100hz, rg=10k u - 0.5 6.0 db nf(2) v ce =6v, i c =0.1ma, f=1khz, rg=10k u - 0.2 3.0
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