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www.irf.com 1 02/23/12 IRLTS2242PBF hexfet power mosfet notes through are on page 2 applications battery operated dc motor inverter mosfet system/load switch features and benefits top view 1 2 d g a d d d s 3 4 5 6 tsop-6 features benefits industry-standard tsop-6 package results in multi-vendor compatibility rohs compliant containing no lead, no bromide and no halogen ? v ds -20 v v gs max 1 2v r ds(on) max (@v gs = -4.5v) 32 m ? r ds(on) max (@v gs = -2.5v) 55 m ? q g typ 12 nc i d (@t a = 25c) -6.9 a note form quantity irlts2242trpbf tsop-6 tape and reel 3000 orderable part number package type standard pack absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 4.5v i d @ t a = 70c continuous drain current, v gs @ 4.5v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 2.0 0.02 1.3 max. -6.9 -55 12 -20 -5.5 v w a c

2 www.irf.com g d s repetitive rating; pulse width limited by max. junction temperature. pulse width ? 400 s; duty cycle ? 2%. when mounted on 1 inch square copper board. thermal resistance parameter typ. max. units r ? ??? 62.5 c/w static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage -20 ??? ??? v ?? ? ? ? t d(on) turn-on delay time ??? 5.8 ??? t r rise time ??? 18 ??? t d(off) turn-off delay time ??? 81 ??? t f fall time ??? 68 ??? c iss input capacitance ??? 905 ??? c oss output capacitance ??? 280 ??? c rss reverse transfer capacitance ??? 200 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 41 62 ns q rr reverse recovery charge ??? 16 24 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = -10 a v gs = -2.5v, i d = -5.5a m ? v dd = -10v, v gs = -4.5v v ds = -10v r g = 6.8 ? v ds = -10v, i d = -5.5a v ds = -16v, v gs = 0v, t j = 125c a i d = -5.5a i d = -5.5a v gs = 0v v ds = -10v v ds = -16v, v gs = 0v t j = 25c, i f = -5.5a, v dd = -16v di/dt = 100a/ s t j = 25c, i s = -5.5a, v gs = 0v showing the integral reverse p-n junction diode. conditions ? = 1.0khz conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -4.5v, i d = -6.9a ??? ??? -55 ??? ??? -2.0 mosfet symbol na ns a pf nc v gs = -4.5v v gs = -12v v gs = 12v

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -4.50v -2.50v -2.25v -2.00v -1.80v -1.55v bottom -1.40v ? 60 s pulse width tj = 25c -1.40v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -1.40v ? 60 s pulse width tj = 150c vgs top -10v -4.50v -2.50v -2.25v -2.00v -1.80v -1.55v bottom -1.40v 0 1 2 3 4 5 -v gs , gate-to-source voltage (v) 1.0 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -10v ? 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -6.9a v gs = -4.5v 1 10 100 -v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -16v v ds = -10v v ds = -4.0v i d = -5.5a

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 8. maximum safe operating area fig 9. maximum drain current vs. case temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v sd , source-to-drain voltage (v) 0.1 1 10 100 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 8 - i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 - v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = -10 a i d = -250 a i d = -1.0ma i d = -10ma 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc

www.irf.com 5 fig 12. on-resistance vs. gate voltage fig 13. typical on-resistance vs. drain current fig 14. maximum avalanche energy vs. drain current fig 15 typical power vs. time

p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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fig 16. for p-channel hexfet power mosfets 0 5 10 15 20 -v gs, gate -to -source voltage (v) 0 10 20 30 40 50 60 70 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = -6.9a t j = 25c t j = 125c 0 10 20 30 40 50 60 -i d , drain current (a) 0 50 100 150 200 250 300 350 400 450 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = -4.5v vgs = -2.5v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -1.3a -2.0a bottom -5.5a 1e-8 1e-7 1e-6 1e-5 1e-4 1e-3 time (sec) 0 2000 4000 6000 8000 10000 12000 14000 16000 p o w e r ( w )

6 www.irf.com fig 17a. gate charge test circuit fig 17b. gate charge waveform fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit fig 19b. switching time waveforms fig 19a. switching time test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k s r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v ' ( ???? ) $
??????? + - t p v ( br ) dss i as v ds 90% 10% v gs t d(on) t r t d(off) t f

www.irf.com 7

tsop-6 package outline tsop-6 part marking information
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8 www.irf.com tsop-6 tape and reel information 8mm feed direction 4mm notes : 1. outline conforms to eia-481 & eia-541. 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. ? qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standard at the time of product release. ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/12 data and specifications subject to change without notice. ms l 1 (per i p c/j e de c j -s t d-020d ??? ) rohs compliant yes tsop-6 qualification information ? moisture sensitivity level qualification level cons umer ?? (per jede c je s d47f ??? guidelines )

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