tc74hct02ap/af 2012-02-29 1 toshiba cmos digital integrat ed ci rcuit silicon monolithic tc74hct02ap,tc74hct02af quad 2-input nor gate the tc74hct02a is a high speed cmos 2-input nor gate fabricated with silicon gate c 2 mos technology. it achieves the high speed operat ion similar to equivalent lsttl while maintaining the cmos low power dissipation. this device may be used as a level converter for interfacing ttl or nmos to high speed cmos. the inputs are compatible with ttl, nmos and cmos output voltage levels. the internal circuit is composed of 3 stages, including buffer output, which provide high nois e immunity and stable output. all inputs are equipped with prot ection circuits against static discharge or transi ent excess voltage. features ? high speed: t pd = 9 ns (typ.) at v cc = 5 v ? low power dissipation: i cc = 1 a (max) at ta = 25c ? compatible with ttl outputs: v ih = 2 v (min) v il = 0.8 v (max) ? wide interfacing ability: lsttl, nmos, cmos ? output drive capability: 10 lsttl loads ? symmetrical output impedance: |i oh | = i ol = 4 ma (min) ? balanced propagation delays: t plh ? t phl ? pin and function compatible with 74ls02 pin assignment tc74hct02ap tc74hct02af weight dip14-p-300-2.54 : 0.96 g (typ.) sop14-p-300-1.27a : 0.18 g (typ.)
tc74hct02ap/af 2012-02-29 2 iec logic symbol truth table a b y l l h l h l h l l h h l absolute maximum ratings (note 1) characteristics symbol rating unit supply voltage range v cc ?0.5~7 v dc input voltage v in ?0.5~v cc + 0.5 v dc output voltage v out ?0.5~v cc + 0.5 v input diode current i ik 20 ma output diode current i ok 20 ma dc output current i out 25 ma dc v cc /ground current i cc 50 ma power dissipation p d 500 (dip) (note 2)/180 (sop) mw storage temperature t stg ?65~150 c note 1: exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in ic performance or even destruction. using continuously under heavy loads (e.g. the app lication of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper ature/current/voltage, etc. ) are within the absolute maximum ratings and the operating ranges. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 2: 500 mw in the range of ta = ? 40 to 65c. from ta = 65 to 85c a derating factor of ? 10 mw/c shall be applied until 300 mw. operating ranges (note) characteristics symbol rating unit supply voltage v cc 4.5~5.5 v input voltage v in 0~v cc v output voltage v out 0~v cc v operating temperature t opr ?40~85 c input rise and fall time t r , t f 0~500 ns note: the operating ranges must be maintained to ensure the normal oper ation of the device. unused inputs must be tied to either vcc or gnd.
tc74hct02ap/af 2012-02-29 3 electrical characteristics dc characteristics test condition ta = 25c ta = ? 40~85c characteristics symbol v cc (v) min typ. max min max unit high-level input voltage v ih ? 4.5~5.5 2.0 ? ? 2.0 ? v low-level input voltage v il ? 4.5~5.5 ? ? 0.8 ? 0.8 v i oh = ?20 a 4.5 4.4 4.5 ? 4.4 ? high-level output voltage v oh v in = v ih or v il i oh = ? 4 ma 4.5 4.18 4.31 ? 4.13 ? v i ol = 20 a 4.5 ? 0.0 0.1 ? 0.1 low-level output voltage v ol v in = v ih or v il i ol = 4 ma 4.5 ? 0.17 0.26 ? 0.33 v input leakage current i in v in = v cc or gnd 5.5 ? ? 0.1 ? 1.0 a i cc v in = v cc or gnd 5.5 ? ? 1.0 ? 10.0 a quiescent supply current i c per input: v in = 0.5 v or 2.4 v other input: v cc or gnd 5.5 ? ? 2.0 ? 2.9 ma ac characteristics (c l = 15 pf, v cc = 5 v, ta = 25c, input: t r = t f = 6 ns) characteristics symbol test condition min typ. max unit output transition time t tlh t thl ? ? 6 12 ns propagation delay time t plh t phl ? ? 9 15 ns ac characteristics (c l = 50 pf, input: t r = t f = 6 ns) test condition ta = 25c ta = ? 40~85c characteristics symbol v cc (v) min typ. max min max unit output transition time t tlh t thl ? 4.5 5.5 ? ? 8 7 15 13 ? ? 19 16 ns propagation delay time t plh t phl ? 4.5 5.5 ? ? 12 11 18 16 ? ? 23 20 ns input capacitance c in ? ? 5 10 ? 10 pf power dissipation capacitance c pd (note) ? ? 18 ? ? ? pf note: c pd is defined as the value of the internal equivalent capacitance which is ca lculated from the operating current consumption without load. average operating current can be obtained by the equation: i cc (opr) = c pd ?v cc ?f in + i cc /4 (per gate)
tc74hct02ap/af 2012-02-29 4 package dimensions weight: 0.96 g (typ.)
tc74hct02ap/af 2012-02-29 5 package dimensions weight: 0.18 g (typ.)
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