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inchange semiconductor product specification silicon pnp power transistors 2SA1021 description with to-126 package high breakdown voltage large current capacity applications for color tv sound output;converters inverters applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -150 v v ceo collector-emitter voltage open base -150 v v ebo emitter-base voltage open collector -6 v i c collector current -1.5 a i cm collector current-peak -2.5 a t a =25 1.0 p c collector power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150 www..net
inchange semiconductor product specification silicon pnp power transistors 2SA1021 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma; r be = -150 v v (br)cbo collector-base breakdown voltage i c =-10 a; i e =0 -150 v v (br)ebo emitter-base breakdown voltage i e =-10 a ; i c =0 -6 v v cesat collector-emitter saturation voltage i c =-500ma; i b =-50ma b -0.5 v v besat base-emitter saturation voltage i c =-500ma; i b =-50ma b -1.2 v i cbo collector cut-off current v cb =-120v; i e =0 -1.0 a i ebo emitter cut-off current v eb =-4v; i c =0 -1.0 a h fe dc current gain i c =-150ma ; v ce =-5v 60 320 f t transition frequency i c =-50ma ; v ce =-10v 15 mhz 2
inchange semiconductor product specification silicon pnp power transistors 2SA1021 package outline fig.2 outline dimensions 3

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