SPP15P10P g spd15p10p g sipmos ? small-signal-transistor features ? p-channel ? enhancement mode ? normal level ? avalanche rated ? pb-free lead plating; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =100 c pulsed drain current i d,pulse t c =25 c avalanche energy, single pulse e as i d =-15 a, r gs =25 ? mj gate source voltage v gs v power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c esd class soldering temperature iec climatic category; din iec 68-1 -15 -10.6 128 value 230 -60 55/175/56 -55 ... 175 20 260 c 1c (1kv to 2kv) v ds -100 v r ds(on),max 0.24 ? i d -15 a product summary pg-to252-3 pg-to220-3 type package marking lead free packing SPP15P10P g pg-to220-3 15p10p yes non dry spd15p10p g pg-to252-3 15p10p yes non dry rev 1.6 page 1 2009-08-25
SPP15P10P g spd15p10p g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - soldering point r thjc - - 1.17 k/w thermal resistance, junction - ambient r thja minimal footprint, steady state --75 6 cm 2 cooling area 1) , steady state --45 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =-1 ma -100 - - v gate threshold voltage v gs(th) v ds = v gs , i d =- 1.54 ma -4 -3 -2.1 zero gate voltage drain current i dss v ds =-100 v, v gs =0 v, t j =25 c - -0.1 -1 a v ds =-100 v, v gs =0 v, t j =150 c - -10 -100 gate-source leakage current i gss v gs =-20 v, v ds =0 v - -10 -100 na drain-source on-state resistance r ds(on) v gs =-10 v, i d =-10.6 a - 160 240 m ? 6 page 2 2009-08-25
SPP15P10P g spd15p10p g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 961 1280 pf output capacitance c oss - 237 315 reverse transfer capacitance c rss - 100 150 turn-on delay time t d(on) - 9.5 15.9 ns rise time t r -2333 turn-off delay time t d(off) -3343 fall time t f -1620 gate char g e characteristics 2) gate to source charge q gs - 5.4 7.2 nc gate to drain charge q gd -1827 gate charge total q g -3748 gate plateau voltage v plateau - 5.9 - v reverse diode diode continuous forward current i s - - -15 a diode pulse current i s,pulse --60 diode forward voltage v sd v gs =0 v, i f =-15 a, t j =25 c - -0.94 -1.35 v reverse recovery time t rr - 100 150 ns reverse recovery charge q rr - 419 628 nc 2) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =-25 v, f =1 mhz v dd =-50 v, v gs =-10 v, i d =-15 a, r g =6 v dd =-80 v, i d =-15 a, v gs =0 to -10 v v r =50 v, i f =| i s |, d i f /d t =100 a/s rev 1.6 page 3 2009-08-25
SPP15P10P g spd15p10p g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); | v gs | -v ds [v] -i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 10 0 10 -1 10 -2 t p [s] z thjs [k/w] 0 20 40 60 80 100 120 140 0 40 80 120 160 t c [c] p tot [w] 0 4 8 12 16 0 40 80 120 160 t c [c] -i d [a] rev 1.6 page 4 2009-08-25
SPP15P10P g spd15p10p g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j -4 v -4.5 v -5 v -6 v -7 v -8 v -10 v 100 200 300 400 500 0102030 -i d [a] r ds(on) [m ? ] 25 c 125 c 0 2 4 6 8 10 1357 -v gs [v] -i d [a] 0 5 10 15 20 0 5 10 15 20 25 30 -i d [a] g fs [s] -4 v -4.5 v -5 v -6 v -7 v -8 v -10 v 0 5 10 15 20 25 30 35 40 0246810 -v ds [v] -i d [a] rev 1.6 page 5 2009-08-25
SPP15P10P g spd15p10p g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =-10.6 a; v gs =-10 v v gs(th) =f( t j ); v gs = v ds ; i d =-1.54 ma 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ. 98 % 0 100 200 300 400 500 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] ciss coss crss 10 3 10 2 10 1 0 20406080 -v ds [v] c [pf] typ. min. max. 0 1 2 3 4 5 -60 -20 20 60 100 140 180 t j [c] -v gs(th) [v] 25 c, typ 175 c, typ 25 c, 98% 175 c, 98% 10 2 10 1 10 0 10 -1 10 -2 0 0.5 1 1.5 -v sd [v] i f [a] rev 1.6 page 6 2009-08-25
SPP15P10P g spd15p10p g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 v gs =f( q gate ); i d =-15 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =-1ma 90 95 100 105 110 115 120 -60 -20 20 60 100 140 180 t j [c] -v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 125 c 10 3 10 2 10 1 10 0 10 1 10 0 10 -1 t av [s] -i av [a] 20 v 50 v 80 v 0 2 4 6 8 10 0 10203040 - q gate [nc] - v gs [v] rev 1. 6 page 7 2009-08-25
SPP15P10P g spd15p10p g package outline: pg-to-252-3 rev 1.6 page 8 2009-08-25
SPP15P10P g spd15p10p g pg-to220-3: outline rev 1.6 page 9 2009-08-25
rev 1.6 page 10 2009-08-25 SPP15P10P g spd15p10p g
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