STD15N06L n - channel enhancement mode low threshold power mos transistor n typical r ds(on) = 0.075 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n low gate charge n high current capability n 175 o c operating temperature n application oriented characterization n through-hole ipak (to-251) power package in tube (suffix "-1") n surface-mounting dpak (to-252) power package in tape & reel (suffix "t4") applications n high current, high speed switching n solenoid and relay drivers n regulators n dc-dc & dc-ac converters n motor control, audio amplifiers n automotive environment (injection, abs, air-bag, lampdrivers, etc.) internal schematic diagram type v dss r ds(on) i d STD15N06L 60 v < 0.1 w 15 a february 1995 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain- gate voltage (r gs = 20 k w )60v v gs gate-source voltage 15 v i d drain current (continuous) at t c = 25 o c15a i d drain current (continuous) at t c = 100 o c10a i dm ( ) drain current (pulsed) 60 a p tot total dissipation at t c = 25 o c50w derating factor 0.33 w/ o c t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ) pulse width limited by safe operating area 1 3 2 ipak to-251 (suffix "-1") 1 3 dpak to-252 (suffix "t4") 1/10
thermal data r thj-case r thj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 3 100 1.5 275 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 15 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25 v) 50 mj e ar repetitive avalanche energy (pulse width limited by t j max, d < 1%) 12 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 10 a electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating x 0.8 t c = 125 o c 250 1000 m a m a i gss gate-body leakage current (v ds = 0) v gs = 15 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a11.72.5v r ds(on) static drain-source on resistance v gs = 5v i d = 7.5 a v gs = 5v i d = 7.5 a t c = 100 o c 0.075 0.1 0.2 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 15 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds > i d(on) x r ds(on)max i d = 7.5 a 3 5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 700 230 80 950 310 110 pf pf pf STD15N06L 2/10
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 30 v i d = 7.5 a r g = 4.7 w v gs = 5 v (see test circuit figure) 15 160 60 200 ns ns (di/dt) on turn-on current slope v dd = 40 v i d = 15 a r g = 47 w v gs = 5 v (see test circuit figure) 70 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 40 v i d = 15 a v gs = 5 v 18 8 9 30 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 48 v i d = 15 a r gs = 47 w v gs = 10 v (see test circuit figure) 52 100 170 80 140 240 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 15 60 a a v sd ( * ) forward on voltage i sd = 15 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 15 a di/dt = 100 a/ m s v dd = 25 v t j = 150 o c 60 0.14 5 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area thermal impedance STD15N06L 3/10
derating curve transfer characteristics static drain-source on resistance output characteristics transconductance gate charge vs gate-source voltage STD15N06L 4/10
capacitance variations normalized gate threshold voltage vs temperature normalized on resistance vs temperature turn-on current slope cross-over time turn-off drain-source voltage slope STD15N06L 5/10
switching safe operating area accidental overload area source-drain diode forward characteristics fig. 1: unclamped inductive load test circuits fig. 2: unclamped inductive waveforms STD15N06L 6/10
fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times fig. 3: switching times test circuits for resistive load STD15N06L 7/10
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 d a c2 c l a3 l2 l1 1 3 h = = b3 b b6 b2 e g a1 = = = = b5 2 to-251 (ipak) mechanical data 0068771-e STD15N06L 8/10
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 a c2 c h a1 a2 == d l2 l4 1 3 == b e == b2 g 2 detail "a" detail "a" to-252 (dpak) mechanical data 0068772-b STD15N06L 9/10
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a STD15N06L 10/10
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