TAT7430B catv 75 ? phemt high gain rf amplifier applications ? single-ended and push-pull optical receivers ? low-noise drop amplifiers ? distribution amplifiers ? multi-dwelling units ? single-ended gain block sot-89 package product features functional block diagram ? high typical gain of 22 db in application circuit ? on-chip active bias for consistent bias current and repeatable performance ? 50 ? 1200 mhz bandwidth ? low noise: typical nf < 2.2 db to 1000mhz ? flexible 5 v to 8 v biasing ? i dd (8v) = 190 ma typical in application circuit ? +41 dbm typical oip3 ? +65 dbm typical oip2 ? +22 dbm typical p1db ? low distortion: cso -61 dbc, ctb -81 dbc (10 dbmv/ch at input, 80 ch ntsc flat) ? phemt device technology ? sot-89 package general description pin configuration the TAT7430B is a low cost rf amplifier designed fo r applications from dc to 1200 mhz. the balance of low noise and distortion provides an ideal solution for a wide range of broadband amplifiers used in cable television applications. it is particularly well suited for new home networks requiring higher gain for a large number of splits. in addition, the TAT7430B?s combination of high gain, low noise, and good return loss make it an excellent choice fo r optical receiver applications and low noise front ends. an internal bias circuit mitigates the effect of temperature and process variation. the bias current can be adjuste d with an external resistor. it is able to work in low noise applications from a 5 v supply. the TAT7430B is fabricated using 6-inch gaas phemt technology to optimize performance and cost. it provides excellent gain and return loss consistency inherent to the phemt process. pin # symbol 1 rf in 2 gnd 3 rf out 4 gnd paddle ordering information part no. description TAT7430B 75 ? high linearity phemt amplifier (lead-free/rohs compliant sot-89 pkg) TAT7430B-eb amplifier evaluation board standard t/r size = 1000 pieces on a 7? reel. rf in gnd rfout data sheet: rev b 03/08/11 - 1 of 7 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. con necting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TAT7430B catv 75 ? phemt high gain rf amplifier data sheet: rev b 03/08/11 - 2 of 7 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. con necting the digital world to the global network ? specifications absolute maximum ratings 1 parameter rating storage temperature -65 to +150 o c device voltage +10 v 1. operation of this device outsi de the parameter ranges given above may cause permanent damage. recommended operating conditions parameter min typ max units v cc 5 8 v i cc 190 ma t j (for >10 6 hours mttf) 150 o c electrical specifications test conditions unless otherwise noted: 25oc case temp, +8v vsupply, dc to 1200 mhz parameter conditions min typical max units operational frequency range 50 1002 mhz gain 22 db gain flatness +/- 0.5 db noise figure at 1 ghz 2.0 db input return loss -22 db output return loss -18 db p1db +22 dbm output ip3 see note 1. +41 dbm output ip2 see note 1. +65 dbm cso see note 2. -61 dbc ctb see note 2. -81 dbc idd 190 ma thermal resistance (jnc. to case) ? jc 32 o c/w notes: 1. at -21 dbm/tone at input. 2. 10 dbmv/ch at input, 80 ch flat ntsc 3. electrical specif ications are meas ured at specified test conditions. 4. specifications are not guaranteed over all recommended operating conditions. www.datasheet.net/ datasheet pdf - http://www..co.kr/
TAT7430B catv 75 ? phemt high gain rf amplifier reference design dc-1200 mhz notes: 1. see pc board layout, page 5 for more information bill of material ref des value description manufacturer part number u1 amplifier, sot-89 triquint TAT7430B r1, r2 20 ? thick film res., 1206, 1%, 1/4 w various r3 15 k ? thick film res., 0402, 5%, 1/10 w various r4 5.1 ? thick film res., 0402, 5%, 1/10 w various c1 150 pf ceramic cap, 0603, cog, 16v, 5% various c2 220 pf ceramic cap, 0402, cog, 16v, 5% various c3, c4, c6 0.01 uf ceramic cap, 0603, x7r, 50v, 10% various c5 47 pf ceramic cap, 0402, cog, 16v, 5% various l1, l2 500 nh ferrite ind., vertical wire-wound, 1206, 10% various l3 5.6 nh ceramic wire-wound ind, 0402, 5% various l4 7.5 nh ceramic wire-wound ind, 0402, 5% various data sheet: rev b 03/08/11 - 3 of 7 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. con necting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TAT7430B catv 75 ? phemt high gain rf amplifier application board typical performance case temperature noted on graphs. vsupply = 8v, icc=190 ma. 15 17 19 21 23 25 50 250 450 650 850 1050 1250 s21 (db) frequency (mhz) gain -40 c -36 -30 -24 -18 -12 -6 50 250 450 650 850 1050 1250 s11 (db) frequency (mhz) input return loss +85 c +2 5 c ? 40 c +8 5 c +25 c -30 -24 -18 -12 -6 0 50 250 450 650 850 1050 1250 s22 (db) frequency (mhz) output return loss -80 -75 -70 -65 -60 -55 60 160 260 360 460 560 cso (dbc) frequency (mhz) cso +25 c +85 c +8 5 c +2 5 c ? 40 c ? 40 c -90 -86 -82 -78 -74 -70 60 160 260 360 460 560 ctb (dbc) frequency (mhz) ctb 0 1 2 3 4 50 250 450 650 850 1050 1250 nf (db) frequency (mhz) noise figure +85 c +25 c ? 40 c +85 c +25 c ? 40 c data sheet: rev b 03/08/11 - 4 of 7 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. con necting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TAT7430B catv 75 ? phemt high gain rf amplifier applications information pc board layout core is .062? fr-4, ? r = 4.7 at 1 mhz. metal layers are 1-oz copper. the pad pattern shown has been developed and tested for optimized assembly at triquint semiconductor. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount processes vary from company to company, careful process development is recommended. for further technical information, refer to http://www.triquint.com/TAT7430B data sheet: rev b 03/08/11 - 5 of 7 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. con necting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TAT7430B catv 75 ? phemt high gain rf amplifier mechanical information package information and dimensions this package is lead-free/rohs-compliant. the plating material on the leads is 100 % matte tin. it is compatible with both lead-free (maximum 260 c reflow temperature) and lead (maximum 245 c reflow temperature) soldering processes. the TAT7430B will be marked with a ?TAT7430B? designator and an alphanumeric lot code. mounting configuration data sheet: rev b 03/08/11 - 6 of 7 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. con necting the digital world to the global network ? notes: 1. ground / thermal vias are critical for the proper performance of this device. vias should use a .35 mm (#80/.0135?) diameter d rill and have a final, plated thru diameter of .25 mm (.010?). 2. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. rf trace width depends upon the pc board material and construction. 4. all dimensions are in millimeters (inches). angles are in degrees. www.datasheet.net/ datasheet pdf - http://www..co.kr/
TAT7430B catv 75 ? phemt high gain rf amplifier product compliance information esd information esd rating: class 1b value: passes ? 600 v min. test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes ? 2000 v min. test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating level 3 at +260 c convection reflow jedec standard ipc/jedec j-std-020. solderability compatible with the latest version of j-std-020, lead free solder, 260 c. this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information abou t triquint: web: www.triquint.com tel: +1.707.526.4498 email: info-sales@tqs.com fax: +1.707.526.1485 for technical questions and application information: email: sjcapplications.engineering@tqs.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatso ever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and th e entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any part y any patent rights, licenses, or any other intellectual prope rty rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reason ably be expected to cause severe personal injury or death. data sheet: rev b 03/08/11 - 7 of 7 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. con necting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
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