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www.irf.com 1 advanced process technology ultra low on-resistance dual n and p channel mosfet surface mount available in tape & reel 150c operating temperature lead-free these hexfet ? power mosfet's in a dual so-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of these hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating.these benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. the efficient so-8 package provides enhanced thermal characteristics and dual mosfet die capability making it ideal in a variety of power applications. this dual, surface mount so-8 can dramatically reduce board space and is also available in tape & reel. so-8 pd - 96110a
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www.irf.com 3 1 10 100 3 4 5 6 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j

1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 6.0v 4.0v 3.5v 3.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 3.0v 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 8.0v 6.0v 4.0v 3.5v 3.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 3.0v 0.1 1 10 100 0.2 0.5 0.8 1.1 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j
4 www.irf.com 0 10 20 30 40 0.040 0.060 0.080 0.100 0.120 r , drain-to-source on resistance i , drain current (a) d ds (on) vgs = 10v vgs = 4.5v !"# " $%""&' (

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( ? ) -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 4.7a 25 50 75 100 125 150 0 40 80 120 160 200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 2.1a 3.8a 4.7a 0.04 0.06 0.08 0.10 0.12 0246810 a gs v , gate-to-source voltage (v) i = 4.7a d
www.irf.com 5 1 10 100 0 200 400 600 800 1000 1200 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss $%""( ' "*" +, &"-
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0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 4.5a v = 12v ds v = 30v ds v = 48v ds 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
6 www.irf.com 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -12v -10v -8.0v -6.0v -4.0v -3.5v -3.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -3.0v

0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -12v -10v -8.0v -6.0v -4.0v -3.5v -3.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -3.0v 1 10 100 3 4 5 6 7 v = -25v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j
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0 2 4 6 8 10 12 0.080 0.120 0.160 0.200 0.240 r , drain-to-source on resistance -i , drain current (a) d ds (on) vgs = -4.5v vgs = -10v @ ? a -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -3.4 a 25 50 75 100 125 150 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.5a -2.7a -3.4a 3 "
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( ? ) 0.05 0.15 0.25 0.35 0.45 2581114 a gs -v , gate-to-source voltage (v) i = -3.4 a d
8 www.irf.com 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -3.1a v = -12v ds v = -30v ds v = -48v ds
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$%""( ' "*" +, &"- 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 1 10 100 0 240 480 720 960 1200 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss
www.irf.com 9 so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx int ernat ional rectifier logo f7101 y = las t digit of t he year part number lot code ww = we e k example: t his is an irf7101 (mos fet ) p = designates lead-free product (opt ional) a = as s e mb l y s i t e code

10 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/2010 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site.

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