IRFY140-T257 mechanical data dimensions in mm (inches) 123 0.89 (0.035) 1.14 (0.045) 10.41 (0.410) 10.67 (0.420) 3.56 (0.140) 3.81 (0.150) 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 0.64 (0.025) 0.89 (0.035) 3.05 (0.120) bsc 2.54 (0.100) bsc dia. 12.07 (0.500) 19.05 (0.750) dia. to?257aa ? metal package n?channel power mosfet for hi?rel applications features ? hermetically sealed to257aa metal package ? simple drive requirements ? lightweight ? screening options available ? all leads isolated from case pad 1 ? gate pad 2 ? drain pad 3 ? source v dss 100v i d(cont) 18a r ds(on) 0.092 v gs gate ? source voltage i d continuous drain current @ t case = 25c i d continuous drain current @ t case = 100c i dm pulsed drain current p d power dissipation @ t case = 25c linear derating factor t j , t stg operating and storage temperature range r jc thermal resistance junction to case r ja thermal resistance junction to ambient 20v 18a 12a 72a 50w 0.48w/c ?55 to 150c 2.1c/w max. 80c/w max. absolute maximum ratings (t case = 25c unless otherwise stated) document number 6541 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
IRFY140-T257 parameter test conditions min. typ. max. unit v gs = 0 i d = 1ma reference to 25c i d = 1ma v gs = 10v i d = 12a v gs = 10v i d = 18a v ds = v gs i d = 250 a v ds 15v i ds = 12a v gs = 0 v ds = 0.8bv dss t j = 125c v gs = 20v v gs = ?20v v gs = 0 v ds = 25v f = 1mhz v gs = 10v i d = 18a v ds = 0.5bv dss i d = 18a v ds = 0.5bv dss v dd = 50v i d = 18a r g = 9.1 i s = 18a t j = 25c v gs = 0 i s = 18a t j = 25c d i / d t 100a/ sv dd 50v electrical characteristics (t c = 25c unless otherwise stated) drain ? source breakdown voltage temperature coefficient of breakdown voltage static drain ? source on?state resistance gate threshold voltage forward transconductance zero gate voltage drain current forward gate ? source leakage reverse gate ? source leakage input capacitance output capacitance reverse transfer capacitance total gate charge gate ? source charge gate ? drain (?miller?) charge turn?on delay time rise time turn?off delay time fall time continuous source current pulse source current diode forward voltage reverse recovery time reverse recovery charge 100 0.1 0.092 0.11 24 9.1 25 250 100 -100 1660 550 120 30 59 2.4 12 12 30.7 21 145 64 105 18 73 1.5 400 2.4 8.7 8.7 v v/c v s ( a na pf nc nc ns a v ns c nh bv dss bv dss t j r ds(on) v gs(th) g fs i dss i gss i gss c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f i s i sm v sd t rr q rr l d l s static electrical ratings dynamic characteristics source ? drain diode characteristics internal drain inductance (from 6mm down drain lead pad to centre of die) internal source inductance (from 6mm down source lead to centre of source bond pad) package characteristics ( ) document number 6541 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
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