CPH6604 no.7147-1/4 features ? low on-resistance. ? ultrahigh-speed switching. ? 4v drive. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7147 CPH6604 package dimensions unit : mm 2202 [CPH6604] 11502 ts im ta-3454 n-channel silicon mosfet ultrahigh-speed switching applications specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 30 v gate-to-source voltage v gss 20 v drain current (dc) i d 2.0 a drain current (pulse) i dp pw 10 m s, duty cycle 1% 8.0 a allowable power dissipation p d mounted on a ceramic board (900mm 2 5 0.8mm)1unit 0.9 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance ? yfs ? v ds =10v, i d =1a 1.3 1.8 s r ds (on)1 i d =1a, v gs =10v 115 150 m w static drain-to-source on-state resistance r ds (on)2 i d =0.5a, v gs =4v 190 270 m w marking : fp continued on next page. any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 sanyo : cph6 0.05 0.9 0.7 0.2 1.6 0.6 0.6 0.95 1 23 6 5 4 2.8 0.2 2.9 0.15 0.4
CPH6604 no.7147-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit input capacitance ciss v ds =10v, f=1mhz 120 pf output capacitance coss v ds =10v, f=1mhz 30 pf reverse transfer capacitance crss v ds =10v, f=1mhz 15 pf turn-on delay time t d (on) see specified test circuit. 6 ns rise time t r see specified test circuit. 4 ns turn-off delay time t d (off) see specified test circuit. 17 ns fall time t f see specified test circuit. 5 ns total gate charge qg v ds =10v, v gs =10v, i d =2.0a 3.6 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =2.0a 0.6 nc gate-to-drain miller charge qgd v ds =10v, v gs =10v, i d =2.0a 0.5 nc diode forward voltage v sd i s =2.0a, v gs =0 0.87 1.2 v electrical connection switching time test circuit pw=10 m s d.c. 1% p. g 50 w g s d i d =1a r l =15 w v dd =15v v out CPH6604 v in 10v 0v v in drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a gate-to-source voltage, v gs -- v r ds (on) -- v gs ambient temperature, ta -- c r ds (on) -- ta gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m 0 250 200 150 100 50 300 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.2 0.4 0.6 0.8 1.0 it02698 50 100 150 200 250 300 350 400 0 01234 5678910 ta=25 c it02700 it02701 i d =0.5a, v gs =4v i d =1.0a, v gs =10v --60 --40 --20 0 20 40 60 80 100 120 160 140 0 2.5 2.0 1.5 1.0 0.5 3.0 v ds =10v --25 c ta=75 c it02699 25 c 1a i d =0.5a v gs =3v 10v 4v 5v 8v 6v 654 123 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 top view
CPH6604 no.7147-3/4 7 0.1 35 7 1.0 23 5 7 23 5 0 5 10 15 20 25 30 1.0 2 7 5 3 10 7 5 3 2 100 0.01 7 5 3 2 0.1 7 5 3 2 1.0 7 5 3 2 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 1000 100 7 5 3 2 7 5 3 2 f=1mhz ciss coss crss it02705 t d (off) it02704 t d (on) t r t f v dd =15v v gs =10v it02703 v gs =0 --25 c 25 c ta=75 c total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v amibient tamperature, ta -- c p d -- ta allowable power dissipation, p d -- w a s o drain-to-source voltage, v ds -- v drain current, i d -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf drain current, i d -- a sw time -- i d switching time, sw time -- ns drain current, i d -- a forward transfer admittance, ? y fs ? -- s ? y fs ? -- i d diode forward voltage, v sd -- v forward current, i f -- a i f -- v sd 0.1 1.0 2 3 5 7 0.01 2 3 5 7 10 2 3 5 7 it04065 0.1 23 57 1.0 23 57 10 23 5 < 10 s 100 s i d =2a dc operation i dp =8a 1ms 10ms 100ms 0 0 2 4 6 8 4.5 4.0 2.0 2.5 3.0 3.5 0.5 1.0 1.5 10 it04064 it04063 0.01 0.1 0.1 1.0 10 23 57 23 57 23 57 10 1.0 7 5 3 2 7 5 3 2 v ds =10v 75 c 25 c ta= --25 c v ds =10v i d =2a 0.2 0.4 0.6 0.8 0.9 1.0 0 0 20 40 60 80 100 120 140 160 it04066 mounted on a ceramic board(900mm 2 5 0.8mm)1unit operation in this area is limited by r ds (on). ta=25 c single pulse mounted on a ceramic board (900mm 2 5 0.8mm)1unit
CPH6604 no.7147-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of january, 2002. specifications and information herein are subject to change without notice. ps
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