View PMB2332-R_5887443.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

ics for communications lna/mixer pmb 2332 version 1.2 preliminary specification 06.96 t2332-xv12-p2-7600
(glwlrq 3xeolvkhge\ 6lhphqv$* %huhlfk+doeohlwhu0dunhwlqj .rppxqlndwlrq%dodqvwud?h 0?qfkhq ? siemens ag 1995. all rights reserved. $wwhqwlrqsohdvh as far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. the information describes the type of compo- nent and shall not be considered as assured characteristics. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the semiconductor group offices in germany or the siemens companies and representatives worldwide (see address list). due to technical requirements components may contain dangerous substances. for infor- mation on the types in question please contact your nearest siemens office, semiconductor group. siemens ag is an approved cecc manufac- turer. 3dfnlqj please use the recycling operators known to you. we can also help you C get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is returned to us un- sorted or which we are not obliged to accept, we shall have to invoice you for any costs in- curred. &rpsrqhqwvxvhglqolihvxssruwghylfhv ruv\vwhpvpxvwehh[suhvvo\dxwkrul]hg iruvxfksxusrvh critical components 1 of the semiconductor group of siemens ag, may only be used in life-support devices or systems 2 with the ex- press written approval of the semiconductor group of siemens ag. 1 a critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effective- ness of that device or system. 2 life support devices or systems are intend- ed (a) to be implanted in the human body, or (b) to support and/or maintain and sus- tain human life. if they fail, it is reasonable to assume that the health of the user may be endangered. $xvjdeh +hudxvjhjhehqyrq6lhphqv$* %huhlfk+doeohlwhu0dunhwlqj .rppxqlndwlrq%dodqvwud?h 0?qfkhq ? siemens ag 1995. alle rechte vorbehalten. :lfkwljh+lqzhlvh gew?hr fr die freiheit von rechten dritter leisten wir nur fr bauelemente selbst, nicht fr anwendungen, verfahren und fr die in bauelementen oder baugruppen realisierten schaltungen. mit den angaben werden die bauelemente spezifiziert, nicht eigenschaften zugesichert. lieferm?glichkeiten und technische ?nderun- gen vorbehalten. fragen ber technik, preise und lieferm?g- lichkeiten richten sie bitte an den ihnen n?chstgelegenen vertrieb halbleiter in deutschland oder an unsere landesgesell- schaften im ausland. bauelemente k?nnen aufgrund technischer erfordernisse gefahrstoffe enthalten. aus- knfte darber bitten wir unter angabe des be- treffenden typs ebenfalls ber den vertrieb halbleiter einzuholen. die siemens ag ist ein hersteller von cecc- qualifizierten produkten. 9husdfnxqj bitte benutzen sie die ihnen bekannten ver- werter. wir helfen ihnen auch weiter C wenden sie sich an ihren fr sie zust?ndigen vertrieb halbleiter. nach rcksprache nehmen wir verpackungsmaterial sortiert zurck. die transportkosten mssen sie tragen. fr verpackungsmaterial, das unsortiert an uns zurckgeliefert wird oder fr das wir keine rcknahmepflicht haben, mssen wir ihnen die anfallenden kosten in rechnung stellen. %dxvwhlqhlqohehqvhukdowhqghq*hulwhq rghu6\vwhphqp?vvhqdxvgu?fnolfkgdi?u ]xjhodvvhqvhlq kritische bauelemente 1 des bereichs halblei- ter der siemens ag drfen nur mit ausdrckli- cher schriftlicher genehmigung des bereichs halbleiter der siemens ag in lebenserhalten- den ger?ten oder systemen 2 eingesetzt wer- den. 1 ein kritisches bauelement ist ein in einem lebenserhaltenden ger?t oder system ein- gesetztes bauelement, bei dessen ausfall berechtigter grund zur annahme besteht, da? das lebenserhaltende ger?t oder sy- stem ausf?llt bzw. dessen sicherheit oder wirksamkeit beeintr?chtigt wird. 2 lebenserhaltende ger?te und systeme sind (a) zur chirurgischen einpflanzung in den menschlichen k?rper gedacht, oder (b) untersttzen bzw. erhalten das menschli- che leben. sollten sie ausfallen, besteht berechtigter grund zur annahme, da? die gesundheit des anwenders gef?hrdet wer- den kann.
30% 5hylvlrq+lvwru\ &xuuhqw9huvlrq previous version: 11.95 page (in version) page (in new version) subjects (major changes since last revision) update of rf/s-parameters becauce of cavitiy change, correction of printing mistakes
30% 7deohri&rqwhqwv 3djh semiconductor group 4 06.96 2yhuylhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.1 functional description, benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.2 applications: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.3 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 1.4 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 1.5 functional block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 1.6 circuit description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 (ohfwulfdo&kdudfwhulvwlfv . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 2.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 2.2 operational range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 2.3 ac/dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 3dfndjh2xwolqhv . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
376623 semiconductor group 5 06.96 /1$0,;(5 30% 9huvlrq %lsrodu,& 7\sh 2ughulqj&rgh 3dfndjh pmb 2332 p-tssop-16 ? reduced external components ? high isolation between mixer ports ? good crosstalk performance /1$ ? 17 db gain, 1.3db noise figure at 0.9ghz ? gain adjustable over 20 db range ? 5.5ma current consumption 0,;(5 ? universal gilbert cell mixer with adjustable mixer current ? 15db gain, 9db ssb noise figure for 0.9ghz at 45mhz if ? if up to 3ghz $ssolfdwlrqv ? all wireless systems up to 1.1ghz 2yhuylhz )xqfwlrqdo'hvfulswlrq%hqhilwv ? new b6hf bipolar technology, 25ghz ft ? frequency range up to 1.1 ghz ? small outline p-tssop 16 package ? 2.7-4.5v supply voltage ? -40c to +85c operational temperature range ? 7.7 ma total current consumption, adjustable ? standby function
30% semiconductor group 6 06.96 3lq&rqiljxudwlrq (top view) 376623 ai aref gnd1 gnd1 mo mox vcc2 lox ao gc stb mix mi gnd2 lo vcc1
30% semiconductor group 7 06.96 3lq'hilqlwlrqvdqg)xqfwlrqv 3lq1r 6\pero )xqfwlrq 1 aref lna bias supply for ai input 2 ai lna signal, base input 3 gnd1 lna ground 4 gnd1 lna ground 5 mo mixer signal open collector output, not inverted 6 mox mixer signal open collector output, inverted, 7 vcc2 mixer voltage supply 8 lox mixer local oscillator signal base input, inverted 9 lo mixer local oscillator signal base input, not inverted 10 gnd2 mixer ground 11 mi mixer signal emitter input, not inverted 12 mix mixer signal emitter input, inverted 13 stb standby total circuit 14 vcc1 lna voltage supply 15 ao lna signal output, open collector 16 gc lna gain control input
30% semiconductor group 8 06.96 )xqfwlrqdo%orfn'ldjudp 1 2 3 4 5 6 7 8 12 13 9 10 11 16 15 14 bias 9&& /2; 02 02; 9&& 67% $, $5() $2 *& *1' /2 0,; 0, *1' *1' mo mox lo lox mi mix bias1 bias2 mixer amplifier
30% semiconductor group 9 06.96 &lufxlw'hvfulswlrq *hqhudo'hvfulswlrq /1$ after entering the ic at pin ai the rf input signal is amplified in the lna stage. the gain of this lna is controlled with the dc level at pin gc and can be adjusted over a range of 20 db. the output pin ao makes the amplified signal externally available for further use. matching networks at in-/ and output can be used to improve the gain and noise performance. for reducing the series feedback of the emitter line the lna is connected to gnd with the two gnd1 pins. at aref the internal supplied reference voltage has to be blocked for improving the noise performance and needs to be connected to ai for biasing the lna transistor stages. vcc1 is the voltage supply for the lna. 0,;(5 the mixer used in this design is a symmetric gilbert cell mixer. the amplified and filtered rf signal reenters the ic via a transformer at the pins mi/mix, a base grounded balanced input configuration. with an external supplied local oscillator at lo/lox a up/ down converted output signal is created at the open collector pins mo/mox. for biasing the open collector pins need to be connected to an external voltage supply. the input pins mi/mix and lo/lox can be used in a balanced or unbalanced configuration. via the pins vcc2 and gnd2 the mixer voltage supply has to be connected to the ic. &20021 differential signals and symmetrical circuits are used throughout the mixer part of the ic. an internal bias driver generates supply voltage and temperature compensated reference voltages. the stb pin allows the circuit to be switched in a low power consuming mode. all pins with the exception of ai,ao and gnd1,2 are esd protected.
30% semiconductor group 10 06.96 (ohfwulfdo&kdudfwhulvwlfv $evroxwh0d[lpxp5dwlqjv the maximum ratings may not be exceeded under any circumstances, not even momentarily and individually, as permanent damage to the ic will result. ambient temperature 7 amb = -40c...+85c 3dudphwhu 6\pero /lplw9doxhv 8qlwv 5hpdunv 0lq 0d[ 1 supply voltage 9 s -0.3 5.5 v 9 s = 9 cc1 = 9 cc2 2a input voltage 9 mi/mix -0.3 1.9 v 9 s = 0v 2b input voltage 9 lo/lox 0.6 9 s +0.3 v 2c input current , ai 0.16 ma 2d input voltage 9 gc -0.3 9 cc1 +0.3 v 2e input voltage 9 stb -0.3 9 s +0.3 v 2f output current , ao 8ma 3a output voltage 9 aref no external voltage to be con- nected to ai 3b open collector output voltage 9 mo/mox 1.3 9 s +0.3 v 3c open collector output voltage 9 ao, 9 cc1 1.0 9 s +0.3 v 4 differential input voltage 9, diff 2.0 9 pp 5 junction temperature 7 j 125 c 6 storage temperature 7 s -40 125 c 7 thermal resistance 5 thja 184 k/w
30% semiconductor group 11 06.96 2shudwlrqdo5dqjh within the operational range the ic operates as described in the circuit description. the ac/dc characteristic limits are not guaranteed. supply voltage 9 vcc = 2.7v...4.5v, ambient temperature 7 amb = -40c...85c 1rwh 3rzhuohyhovuhihuwr2kpvlpshgdqfh 3dudphwhu 6\pero /lplw9doxhv 8qlwv 5hpdunv 0lq 0d[ 1 ai input frequency i ai 1100 mhz 2 mi/x input frequency i mi 3000 mhz 3 lo/x input frequency i lo 3000 mhz 4 if intermediate frequency i if 3000 mhz 5 standby voltage on 67% on 2.0 9 s v 6 standby voltage off 67% off 00.5v 7 gain control on *& on 0 1.2 v diagram4 8 gain control off *& off 2.3 9 s v diagram4
30% semiconductor group 12 06.96 $&'&&kdudfwhulvwlfv ac/dc characteristics involve the spread of values guaranteed within the specified supply voltage and ambient temperature range. typical characteristics are the median of the production. supply voltage 9 9&& 2.7v...4.5v, ambient temperature 7 dpe = +25c all lna mesasurements have been done with siemens rt5880 duroid (teflon) boards * minimum values for external resistors at mi/mix r1=r2=180 w matching network used 3dudphwhu 6\pero /lplw9doxhv 8qlwv 7hvw &rqglwlrqv 7hvw &lufxlw 0lq 7\s 0d[ 6xsso\&xuuhqw 1 supply current, total ic , 5,6,7,14,15 7.7 ma stb on, no external resistors r1,2 1a,b 2 supply current, total ic , 5,6,7,14,15 10.7 ma stb on, with ext. resistors r1,2=180 w * 1a,b 3 supply current, total ic , 5,6,7,14,15 <20 m a stb off 1a,b *dlq&rqwuro adjustable gain range d g 20 db diagram 4 1a,b /1$6ljqdo,qsxw$,pd[jdlqdgmxvwhg 5 input impedance vs. freq. 6 11 diagram 2a 1a,b 6 max. input level, 1db comp. 3 ai -18.0 dbm f=0.9ghz 1a 7 input intercept, third order ,,&3 ai 0 dbm f=0.9ghz 1a 8 noise figure ) ai 1.3 db f=0.9ghz 1a** /1$6ljqdo,qsxw$,plqjdlqdgmxvwhg 9 input impedance vs. freq. 6 11 diagram 2b 1a,b 10 max. input level, 1db comp. 3 ai -18.0 dbm f=0.9ghz 1a 11 input intercept, third order ,,&3 ai 0 dbm f=0.9ghz 1a 12 noise figure ) ai 8.0 db f=0.9ghz 1a**
30% semiconductor group 13 06.96 $&'&&kdudfwhulvwlfv ac/dc characteristics involve the spread of values guaranteed within the specified supply voltage and ambient temperature range. typical characteristics are the median of the production. supply voltage 9 vcc = 2.7v to 4.5v, ambient temperature 7 amb = +25 *matching network used ** referenced for specified mixer performance 3dudphwhu 6\pero /lplw9doxhv 8qlw 7hvw &rqglwlrqv 7hvw &lufxlw 0lq 7\s 0d[ /1$6ljqdo2xwsxw$2pd[jdlq 13 output current , ao 5.0 ma 1a 14 output impedance vs. freq. 6 22 diagram 2a 1a 15 power gain 6 21lna 17 db f=0.9ghz 1a /1$6ljqdo2xwsxw$2plqjdlq 16 output current , ao 0.5 ma 1a 17 output impedance vs. freq. 6 22 diagram 2b 1a 18 power gain 6 21lna -3 db f=0.9ghz 1a 0,;(56ljqdo,qsxw0,0,;'rzqfrqyhuvlrq5 2kp 19 input impedance vs .freq. = mi diagram 3a 1a,b 20 max. input level, 1 db comp. at mo/mox, if=45mhz 3 mi -15 dbm f=0.9ghz 1a 21 input intercept point, d f=800khz, if= 45mhz ,,&3 mi 0 dbm f=0.9ghz 1a 22 blocking level, d f=800khz, if=45mhz, p in ,unwanted= -20db 3 in , unwanted -16 dbm f=0.9ghz 1a 23 noise figure, ssb (nf ssb nf dsb +3db), if=45mhz ) mi 9 db f=0.9ghz 1a* 0,;(5/rfdo2vfloodwru,qsxw/2/2;'rzqfrqyhuvlrq5 2kp 24 input impedance vs freq. = lo diagram 3b 2a,b 25 input level 3 lo -3 dbm f=0.9ghz 1a, **
30% semiconductor group 14 06.96 $&'&&kdudfwhulvwlfv ac/dc characteristics involve the spread of values guaranteed within the specified supply voltage and ambient temperature range. typical characteristics are the median of the production supply voltage 9 vcc = 2.7v...4.5v, ambient temperature 7 amb = +25c 3dudphwhu 6\pero /lplw9doxhv 8qlwv 7hvw &rqglwlrqv 7hvw &lufxlw 0lq 7\s 0d[ 0,;(56ljqdo2xwsxw0202;'rzqfrqyhuvlrq5 2kp 26 output current , mo+mox 4.0 ma incl. r1,r2 1a 27a output resistance 5 modiff 32 kohm if=45mhz 1a 27b 5 modiff 25 kohm if=300mhz 1b 28a output capacitance & modiff 0.36 pf if=45mhz 1a 28b & modiff 0.39 pf if=300mhz 1b 29 power gain, if=45mhz 3 mi 15 db f=0.9ghz 1a 30 power gain, if=300mhz 3 mi 7dbf=0.9ghz1b 0,;(5,vrodwlrq%hwzhhq,q2xwsxw*+]'rzqfrqyhuvlrq5 2kp 31 mi to mo $ mi-mo 50 db i mi = 945mhz, i lo = 900mhz 1a 32 lo to mo $ lo-mo 40 db 1a 33 lo to mi $ lo-mi 35 db 1a 34 mo to mi $ mo-mi 60 db 1a 35 mo to lo $ mo-lo 60 db 1a
30% semiconductor group 15 06.96 7hvw&lufxlwd 7hvw&lufxlwiru0+],qwhuphgldwhiuhtxhqf\ 7hvw&lufxlw i ,) >0+]@ & % >s)@ & . >s)@ ; ; 1a 45 15/100 15 x x c b v gc 16 bias te e ao output v cc c b 180 180 c k 30% 9 8 v cc v cc to k o balun 1:1 to k o balun 1:2 v cc c k c k c k c b mi input lo input c b =20:2 vogt transformer kit, 0.05mm wire =20:2 toko balun =1:1 ? 617db-1023 =1:2 ? 617db-1016 mo output 1 bias te e dc ai input 50 c b
30% semiconductor group 16 06.96 7hvw&lufxlwe 7hvw&lufxlwiru0+]lqwhuphgldwhiuhtxhqf\ 7hvw &lufxlw i ,) >0+]@ />q+@ />q+@ &>s)@ &>s)@ &>s)@ & . >s)@ 1b ? 300 680 150 2.7 12 1.8 15 c b 180 180 c2 v gc c k 16 30% 1 9 8 v cc v cc to k o balun 1:1 to k o - balun 1:2 bias te e dc ai input bias te e ao output v cc v cc c k c k c k c b c b c1 c3 mi input lo input mo output c b l1 l0 toko balun =1:1 ? 617db-1023 =1:2 ? 617db-1016 c b 50 w
30% semiconductor group 17 06.96 7hvw&lufxlw 63dudphwhu0hdvxuhphqwri$psolilhu 6666 the s-parameters are tested at the indicated frequency on duroid 5880 teflon boards. via the nwa the capacitive coupling is done. the output levels at port1 and 2 for pin x and y are -30dbm. s11 and s22 have to be considered as design hints and are measured with siemens testboards. 7hvw 7hvwiuhtxhqf\ 0+] 3lq; 3lq< amp.s11, s12, s21, s22 30 - 1100 ai ao 1hwzrundqdo\]hu = / 2kp pin y port 1 port 2 '87 pin x
30% semiconductor group 18 06.96 'ldjudpd 63dudphwhu/1$, p$9 && 9i 0+]+ljk*dlq 10 25 50 100 250 1k 0 10 10 25 25 50 50 100 100 250 250 1k 1k s11 300 mhz 600 mhz 900 mhz 1100 mhz s22 300 m 600 mhz 900 mhz 1100 mhz 5 10 15 s21 0.05 0.1 0.15 s12 s21 300 mhz 600 mhz 900 mhz 1100 mhz s12 1110 mhz
30% semiconductor group 19 06.96 'ldjudpe 63dudphwhu$psolilhu, p$9 && 9i 0+]/rz*dlq 10 25 50 100 250 1k 0 10 10 25 25 50 50 100 100 250 250 1k 1k s11 300 mhz 600 mhz 900 mhz 1100 mhz s22 300 m 600 mh z 900 mhz 1100 mhz 0.5 1 1.5 2 s21 0.05 0.1 0.15 0.2 s12 s21 300 mhz 600 mhz 900 mhz 1100 mhz s12 1110 mhz
30% semiconductor group 20 06.96 7hvw&lufxlw 63dudphwhu0hdvxuhphqwri0l[hu 6666 the s-parameters are tested at the indicated frequency and the equivalent parallel or series circuit is calculated on this base. via the nwa the capacitive coupling is done and the open collector pins are connected to vcc. the output levels at port1 and 2 for pin x and y are -30dbm for mi and mo impedances and -3dbm for the lo impedance. s-parameters have to be considered as design hints and are measured with siemens testboards. (duroid 5880, teflon boards) 7hvw 7hvw)uhtxhqf\>*+]@ 3lq; 3lq< lo/x-input impedance 30-3000 8 9 mi/x-input impedance 30-3000 11 12 mo/x-output impedance 30-3000 5 6 '87 pin y pin x port 2 port 1 network analyzer z l = 500 ohm
30% semiconductor group 21 06.96 7hvw&lufxlwd 0l[hu,qsxw,pshgdqfh0hdvxuhphqw 7hvw&lufxlwe 0l[hu/rfdo2vflooodwru,pshgdqfh0hdvxuhphqw 1:$ 0, 0,; 02 02; /2 /2; 5 5 '& 6xsso\ w w s s w 3 3 9 6 67% '87 '& 6xsso\ 0, 0,; 02 02; /2 /2; 3 3 1:$ s s s q 5 5 s s w q q+ ?+ 9 6 67% '& 6xsso\ w '87
30% semiconductor group 22 06.96 7hvw&lufxlwf 0l[hu2xwsxw,pshgdqfh0hdvxuhphqw 0, 0,; 02 02; /2 /2; '87 5 5 w w 3 3 1:$ 3rzhu 6xsso\ 9 s q q 9 6 67% s s ,qwhuqdo %ldv7hhv w
30% semiconductor group 23 06.96 'ldjudpd 0l[hu0,,qsxw,pshgdqfh= 0, , 0202; p$i 0+] 'ldjudpe 0l[hu/2,qsxw,pshgdqfh= /2 , 0202; p$i 0+] 10 25 50 100 250 1k 0 10 10 25 25 50 50 100 100 250 250 1k 1k 900 mhz 1.8 ghz rdiff 3.0 ghz rsingle 900 mhz 1.8 ghz 3.0 ghz 10 25 50 100 250 1k 0 10 10 25 25 50 50 100 100 250 250 1k 1k rdiff 900 mhz 1.8 ghz 2.4 ghz 3.0 ghz rsingle 900 mhz 1.8 ghz 2.4 ghz 3.0 ghz
30% semiconductor group 24 06.96 'ldjudp 9rowdjh *& d *>ge@ >9@ *dlq&rqwuroyv*dlq
30% semiconductor group 25 06.96 3dfndjh2xwolqhv 376623 (plastic package) 6ruwvri3dfnlqj package outlines for tubes, trays etc. are contained in our data book package information. dimensions in mm smd = surface mounted device

▲Up To Search▲

Price & Availability of PMB2332-R

	To Download PMB2332-R Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .