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| inchange semiconductor isc product specification isc silicon npn power transistor BDY54 description collector-emitter sustaining voltage- : v ceo(sus) = 120v(min.) collector-emitter saturation voltage- : v ce(sat )= 1.1 v(max)@ i c = 4a high switching speed applications designed for general-purpose switching and amplifier applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 180 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 7 v i c collector current-continuous 12 a i b b base current 5 a p c collector power dissipation@t c =25 60 w t j junction temperature 200 t stg storage temperature -65~200 isc website www.iscsemi.cn 1
inchange semiconductor isc product specification isc silicon npn power transistors BDY54 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 120 v v ce (sat) -1 collector-emitter saturation voltage i c = 4a; i b = 0.4a b 1.1 v v ce (sat) -2 collector-emitter saturation voltage i c = 7a; i b = 1.4a b 2.2 v v be (sat) -1 base-emitter saturation voltage i c = 4a; i b = 0.4a b 2.0 v v be (sat) -2 base-emitter saturation voltage i c = 7a; i b = 1.4a b 2.5 v i cex collector cutoff current v ce = 150v;v be =-1.5v,t c =150 15 ma i ebo emitter cutoff current v eb = 7v; i c = 0 3.0 ma h fe dc current gain i c = 2a; v ce = 1.5v 20 f t current gain-bandwidth product i c = 0.5a; v ce = 4v; f=10mhz 20 mhz switching times t on turn-on time i c = 5a; i b = 1a b 0.3 s t off turn-off time i c = 5a; i b1 = 1a; i b2 = -0.5a 1.8 s isc website www.iscsemi.cn 2 |
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