n- and p-channel enhancement mode power mosfet n-ch p-ch bv dss 60v -60v i d 4.5a -3.5a r dson (typ.) @v gs =(-)10v 37m 70m r dson (typ.) @v gs =(-)4.5v 42m 93m description the UM4599 consists of a n-channel and a p-ch annel enhancement-mode mosfet in a single sop-8 package, providing the designer with the best combin ation of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applicat ions such as dc/dc converters . features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free package equivalent circuit outline UM4599 g gate s source d drain sop-8 1 UM4599
absolute maximum ratings (ta=25 c) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 60 -60 v gate-source voltage v gs 20 20 v continuous drain current @t a =25 c (note 2) i d 4.5 -3.5 a continuous drain current @t a =70 c (note 2) i d 3.6 -2.8 a pulsed drain current (note 1) i dm 20 -20 a power dissipation for dual operation 2 1.6 (note 2) power dissipation for single operation p d 0.9 (note 3) w operating junction and storage temperature range tj; tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 40 c/w 78 (note 2) c/w thermal resistance, junction-to-ambient, max r th,j-a 135 (note 3) c/w note : 1.pulse width limited by maximum juncti on temperature. 2.surface mounted on 1 in2 copper pad of fr-4 board, pulse width 10s. 3.surface mounted on minimum copper pad, pulse width 10s. n-channel electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 60 - - v v gs =0, i d =250 a v gs(th) 1.0 1.7 2.5 v v ds =v gs , i d =250 a i gss - - 100 na v gs =20v, v ds =0 - - 1 v ds =48v, v gs =0 i dss - - 10 a v ds =40v, v gs =0, tj=55 c - 37 58 v gs =10v, i d =4.5a *r ds(on) - 42 60 m v gs =4.5v, i d =4a *g fs - 6 - s v ds =10v, i d =4.5a dynamic ciss - 1173 - coss - 45 - crss - 35 - pf v ds =25v, v gs =0, f=1mhz *t d(on) - 8 20 *t r - 12 18 *t d(off) - 30 35 *t f - 7 15 ns v ds =30v, i d =1a, v gs =10v, r g =6 2 UM4599
*qg - 14 16 *qgs - 3.9 - *qgd - 4.7 - nc v ds =30v, i d =4.5a, v gs =10v source-drain diode *v sd - 0.75 1.0 v v gs =0v, i s =1.3a *i s - - 1.3 a *i sm - - 2.6 a *pulse test : pulse width 300 s, duty cycle 2% p-channel electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -60 - - v v gs =0, i d =-250 a v gs(th) -1.0 -1.8 -2.5 v v ds =v gs , i d =-250 a i gss - - 100 na v gs =20v, v ds =0 - - -1 v ds =-48v, v gs =0 i dss - - -10 a v ds =-40v, v gs =0, tj=55 c - 70 90 v gs =-10v, i d =-3.5a *r ds(on) - 93 125 m v gs =-4.5v, i d =-3a *g fs - 5 - s v ds =-10v, i d =-3.5a dynamic ciss - 940 - coss - 49 - crss - 35 - pf v ds =-30v, v gs =0, f=1mhz *t d(on) - 6 13 ns *t r - 8 18 *t d(off) - 26 31 *t f - 11 20 ns v ds =-30v, i d =-1a, v gs =-10v, r g =6 *qg - 10 15 *qgs - 3 - *qgd - 3.1 - nc v ds =-30v, i d =-3.5a, v gs =-10v source-drain diode *v sd - -0.75 -1.0 v v gs =0v, i s =-1.3a *i s - - -1.3 *i sm - - -2.6 a *pulse test : pulse width 300 s, duty cycle 2% 3 UM4599
typical characteristics : q1( n-channel ) typical output characteristics 0 5 10 15 20 012345 v ds , drain-source voltage(v) i d , drain current(a) v gs =3v 10v, 9v, 8v, 7v, 6v, 5v, 4v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =2.5v v gs =3v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 80 90 100 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =4.5a r ds( on) @tj=25c : 36m typ. v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =4.5a 4 UM4599
typical characteristics(cont.) : q1( n-channel) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0246810121416 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =4.5a v ds =48v v ds =30v v ds =12v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 1ms 100 s r ds( on) limite t a =25c, tj=150c, v gs =10v r ja =78c/w,single pulse 1s 100m maximum drain current vs junction temperature 0 1 2 3 4 5 6 25 50 75 100 125 150 175 t j , junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v r ja =78c/w 5 UM4599
typical characteristics(cont .) : q1( n-channel) typical transfer characteristics 0 5 10 15 20 25 30 35 40 024681012 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j( max) =150c t a =25c ja =78c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =78 c/w 6 UM4599
typical characteristics : q2( p-channel) typical output characteristics 0 5 10 15 20 012345 -v ds , drain-source voltage(v) -i d , drain current (a) -10v, -9v, -8v, -7v,-6v,-5v v gs =-3v v gs =-4v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-4.5v v gs =-3v v gs =-10v source drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 02468 -i s , source drain current(a) -v sd , source-drain voltage(v) 10 v gs =0v tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , normalized static drain-source on-state resistance v gs =-10v, i d =-3.5a r ds( on) @tj=25c : 69m typ. -v gs , gate-source voltage(v) r ds(on) , static drain-source on-state resistance(m) i d =-3.5a 7 UM4599
typical characteristics(cont.) : q2(p-channel) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 tj, junction temperature(c) -v gs( th) , threshold voltage(v) i d =-250 a forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance(s) v ds =-10v pulsed t a =25c gate charge characteristics 0 2 4 6 8 10 024681012 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-48v i d =-3.5a v ds =-30v v ds =-12v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -i d , drain-source voltage(v) -i d , drain current(a) dc 10ms 100m 100 s t a =25c, tj=150c, v gs =-10v ja =78c/w, single pulse 1s 1ms r ds( on) limited maximum drain current vs junction temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-10v r ja =78c/w 8 UM4599
typical characteristics(cont.) : q2(p-channel) typical transfer characteristics 0 5 10 15 20 25 30 35 40 0246810 -v gs , gate-source voltage(v) -i d , drain current (a) v ds =-10v single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j( m ax) =150c t a =25c ja =78c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =50c/w 9 UM4599
|
