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2sj551(l), 2sj551(s) silicon p channel mos fet high speed power switching ade-208-647b (z) 3rd. edition jul. 1998 features low on-resistance r ds(on) = 0.050 w typ. low drive current. 4v gate drive devices. high speed switching. outline 1. gate 2. drain 3. source 4. drain 1 2 3 4 1 2 3 4 ldpak d g s
2sj551(l),2sj551(s) 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss ?0 v gate to source voltage v gss ?0 v drain current i d ?8 a drain peak current i d(pulse) note1 ?2 a body-drain diode reverse drain current i dr ?8 a avalanche current i ap note3 ?8 a avalanche energy e ar note3 27 mj channel dissipation pch note2 60 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? note: 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25? 3. value at tch = 25?, rg 3 50 w
2sj551(l),2sj551(s) 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss ?0 v i d = ?0ma, v gs = 0 gate to source breakdown voltage v (br)gss ?0 v i g = ?00 m a, v ds = 0 zero gate voltege drain current i dss ?0 m av ds = ?0 v, v gs = 0 gate to source leak current i gss ?0 m av gs = ?6v, v ds = 0 gate to source cutoff voltage v gs(off) ?.0 ?.0 v i d = ?ma, v ds = ?0v static drain to source on state r ds(on) 0.050 0.065 w i d = ?a, v gs = ?0v note4 resistance r ds(on) 0.070 0.110 w i d = ?a, v gs = ?v note4 forward transfer admittance |y fs | 1016 s i d = ?a, v ds = -10v note4 input capacitance ciss 1300 pf v ds = ?0v output capacitance coss 650 pf v gs = 0 reverse transfer capacitance crss 180 pf f = 1mhz turn-on delay time t d(on) 14 ns v gs = ?0v, i d = ?a rise time t r 95 ns r l =3.33 w turn-off delay time t d(off) 190 ns fall time t f 135 ns body?rain diode forward voltage v df ?.0 v i f = ?8a, v gs = 0 body?rain diode reverse recovery time t rr 70 ns i f = ?8a, v gs = 0 dif/ dt =50a/? note: 4. pulse test
2sj551(l),2sj551(s) 4 main characteristics ?0 ?6 ?2 ? ? 0 ?0 v ? ? ? ? ?0 ? v ?0 ?6 ?2 ? ? 0 tc = 75? 25? ?5? ? ? ? ? ? 80 60 40 20 0 50 100 150 200 ?.5 v ? v ? v v = ? v gs ?.5 v ds v = ?0 v pulse test channel dissipation pch (w) case temperature tc (?) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d maximum safe operation area drain to source voltage v (v) ds drain current i (a) d typical output characteristics gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics 0.1 0.3 1 3 10 30 100 1000 300 100 30 10 3 1 0.3 0.1 ta = 25 ? 10 ? 100 ? 1 ms pw = 10 ms (1shot) dc operation (tc = 25?) operation in this area is limited by r ds(on) pulse test
2sj551(l),2sj551(s) 5 ?.0 ?.5 ?.0 ?.5 ?.0 ?.5 0 ? ? ?2 ?6 ?0 ? ? ?0 ?00 ? ?0 ?0 1 0.2 0.01 ?0 0 40 80 120 160 0 0.05 0.02 0.1 0.5 ?.1 ? ?0 ?00 ?.3 ? ?0 100 10 0.1 1 0.3 3 30 i = ?0 a d ?0 a ? a v = ? v gs ?0 v 0.30 0.25 0.20 0.15 0.10 0.05 ?, ?0, ?0 a v = ? v gs ?0 v i = ?0 a d ?, ?0 a 25 ? tc = ?5 ? 75 ? ds v = ?0 v pulse test drain to source saturation voltage vs. gate to source voltage v (v) ds(on) drain to source saturation voltage drain to source on state resistance r ( ) w ds(on) static drain to source on state resistance vs. drain current case temperature tc (?) r ( ) ds(on) static drain to source on state resistance w static drain to source on state resistance vs. temperature drain current i (a) d forward transfer admittance |y | (s) fs forward transfer admittance vs. drain current pulse test pulse test pulse test gate to source voltage v (v) gs drain current i (a) d
2sj551(l),2sj551(s) 6 ?.1 ?.2 ? ? ?0 ?0 100 20 50 10 0 ?0 ?0 ?0 ?0 ?0 10000 1000 3000 300 10 30 100 0 ?0 ?0 ?0 ?0 0 0 ? ? ?2 ?6 16 32 48 64 80 ?0 1000 200 500 100 20 10 50 ? ?.5 di / dt = 50 a / ? v = 0, ta = 25 ? gs v = 0 f = 1 mhz gs ?00 ?.1 ?.2 ? ? ?0 ?0 ? ?.5 ciss coss crss v = ?0 v ?5 v ?0 v dd i = ?8 a d v gs v ds v = ?0 v ?5 v ?0 v dd v = ?0 v, v = ?0 v pw = 5 ?, duty < 1 % gs dd t f r t d(on) t d(off) t reverse drain current i (a) dr reverse recovery time trr (ns) body?rain diode reverse recovery time capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v (v) ds gate to source voltage v (v) gs dynamic input characteristics drain current i (a) d switching time t (ns) switching characteristics
2sj551(l),2sj551(s) 7 d. u. t rg i monitor ap v monitor ds v dd 50 w vin ?5 v 0 i d v ds i ap v (br)dss l v dd e = ?l ?i 2 1 v v ?v ar ap dss dss dd 2 50 40 30 20 10 25 50 75 100 125 150 0 ?0 ?6 ?2 ? ? 0 ?.4 ?.8 ?.2 ?.6 ?.0 v = 0, 5 v gs ?0 v ? v maximum avalanche energy vs. channel temperature derating avalanche test circuit avalanche waveform reverse drain current i (a) dr reverse drain current vs. source to drain voltage pulse test i = ?8 a v = ?5 v duty < 0.1 % rg > 50 ap dd w channel temperature tch (?) repetitive avalanche energy e (mj) ar source to drain voltage v (v) sd
2sj551(l),2sj551(s) 8 vin monitor d.u.t. vin ?0 v r l v = ?0 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 w 90% 10% t f 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c ch ?c = 2.08 ?/w, tc = 25 ? q g q q tc = 25? d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse switching time test circuit waveform pulse width pw (s) normalized transient thermal impedance s (t) g normalized transient thermal impedance vs. pulse width
2sj551(l),2sj551(s) 9 package dimensions hitachi code jedec eiaj mass (reference value) ldpak (l) 1.4 g 10.2 0.3 0.86 0.76 0.1 2.54 0.5 2.54 0.5 + 0.2 ?0.1 1.2 0.2 4.44 0.2 1.3 0.15 2.59 0.2 0.4 0.1 11.0 0.5 8.6 0.3 10.0 11.3 0.5 + 0.3 ?0.5 (1.4) 1.27 0.2 as of january, 2001 unit: mm
2sj551(l),2sj551(s) 10 hitachi code jedec eiaj mass (reference value) ldpak (s)-(1) 1.3 g 10.2 0.3 1.27 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ?0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ?0.1 0.4 0.1 0.86 + 0.2 ?0.1 2.54 0.5 2.54 0.5 1.2 0.2 3.0 + 0.3 ?0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2001 unit: mm
2sj551(l),2sj551(s) 11 hitachi code jedec eiaj mass (reference value) ldpak (s)-(2) 1.35 g 10.2 0.3 1.27 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ?0.5 4.44 0.2 1.3 0.2 0.1 + 0.2 ?0.1 0.4 0.1 0.86 + 0.2 ?0.1 2.54 0.5 2.54 0.5 1.2 0.2 5.0 + 0.3 ?0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2001 unit: mm
2sj551(l),2sj551(s) 12 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0

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