aptm20hm10f aptm20hm10f? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 1 ? 6 s4 g4 g2 s2 vbus 0/vbus s1 g1 s3 out1 out2 g3 absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. symbol parameter max ratings unit v dss drain - source breakdown voltage 200 v t c = 25c 175 i d continuous drain current t c = 80c 131 i dm pulsed drain current 700 a v gs gate - source voltage 30 v r dson drain - source on resistance 10 m p d maximum power dissipation t c = 25c 694 w i ar avalanche current (repetitive and non repetitive) 89 a e ar repetitive avalanche energy 50 e as single pulse avalanche energy 2500 mj v dss = 200v r dson = 10m max @ tj = 25c i d = 175a @ tc = 25c application welding converters switched mode power supplies uninterruptible power supplies motor control features power mos 7 ? fredfets - low r dson - low input and miller capacitance - low gate charge - fast intrinsic reverse diode - avalanche energy rated - very rugged kelvin source for easy drive very low stray inductance - symmetrical design - m5 power connectors high level of integration benefits outstanding performance at high frequency operation direct mounting to heatsink (isolated package) low junction to case thermal resistance low profile full - bridge mosfet power module
aptm20hm10f aptm20hm10f? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 2 ? 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv dss drain - source breakdown voltage v gs = 0v, i d = 375a 200 v v gs = 0v,v ds = 200v t j = 25c 375 i dss zero gate voltage drain current v gs = 0v,v ds = 160v t j = 125c 1500 a r ds(on) drain ? source on resistance v gs = 10v, i d = 87.5a 10 m v gs(th) gate threshold voltage v gs = v ds , i d = 5ma 3 5 v i gss gate ? source leakage current v gs = 30 v, v ds = 0v 150 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 13.7 c oss output capacitance 4.36 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 0.2 nf q g total gate charge 224 q gs gate ? source charge 86 q gd gate ? drain charge v gs = 10v v bus = 100v i d = 150a 94 nc t d(on) turn-on delay time 28 t r rise time 56 t d(off) turn-off delay time 81 t f fall time inductive switching @ 125c v gs = 15v v bus = 133v i d = 150a r g = 2.5 99 ns e on turn-on switching energy 926 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 133v i d = 150a, r g = 2.5 ? 910 j e on turn-on switching energy 1216 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 133v i d = 150a, r g = 2.5 ? 1062 j source - drain diode ratings and characteristics symbol characteristic test conditions min typ max unit tc = 25c 175 i s continuous source current (body diode) tc = 80c 131 a v sd diode forward voltage v gs = 0v, i s = - 150a 1.3 v dv/dt peak diode recovery 8 v/ns t j = 25c 220 t rr reverse recovery time t j = 125c 420 ns t j = 25c 2.14 q rr reverse recovery charge i s = -150a v r = 133v di s /dt = 200a/s t j = 125c 5.8 c e on includes diode reverse recovery. in accordance with jedec standard jesd24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. i s - 150a di/dt 700a/s v r v dss t j 150c
aptm20hm10f aptm20hm10f? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 3 ? 6 thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case 0.18 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 280 g package outline
aptm20hm10f aptm20hm10f? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 4 ? 6 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 5.5v 6v 6.5v 7v 7.5v 9v 0 100 200 300 400 500 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =15&10v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c 0 100 200 300 400 23456789 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.9 0.95 1 1.05 1.1 1.15 1.2 0 40 80 120 160 200 240 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 87.5a 0 20 40 60 80 100 120 140 160 180 200 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
aptm20hm10f aptm20hm10f? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 5 ? 6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) bv dss , drain to source breakdown volta g e ( normalized ) breakdown voltage vs temperature on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d = 87.5a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area dc line 10ms 1ms 100s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited b y r dson single pulse t j =150c ciss crss coss 100 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =40v v ds =100v v ds =160v 0 2 4 6 8 10 12 0 50 100 150 200 250 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =150a t j =25c
aptm20hm10f aptm20hm10f? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 6 ? 6 delay times vs current td (on) td (off) 10 20 30 40 50 60 70 80 90 0 50 100 150 200 250 300 i d , drain current (a) t d(on) and t d(off) (ns) v ds =133v r g =2.5 ? t j =125c l=100 h rise and fall times vs current t r t f 0 20 40 60 80 100 120 140 160 0 50 100 150 200 250 300 i d , drain current (a) t r and t f (ns) v ds =133v r g =2.5 ? t j =125c l=100h switching energy vs current e on e off 0 0.5 1 1.5 2 2.5 0 50 100 150 200 250 300 i d , drain current (a) e on and e off (mj) v ds =133v r g =2.5 ? t j =125c l=100 h e on e off 1 1.5 2 2.5 3 0 5 10 15 20 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =133v i d =150a t j =125c l=100h 0 50 100 150 200 250 300 350 20 40 60 80 100 120 140 160 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =133v d=50% r g =2.5 ? t j =125c t j =25c t j =150c 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage apt reserves the right to change, without notice, the specifications and information contained herein apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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