? 2004 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 175 c 500 a r ds(on) v gs = 10 v, i d = 0.5 i d25 11 m ? v gs = 15 v, i d = 300 a 9 m ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 100 v v gsm 20 v i d25 t c = 25 c 140 a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 300 a i ar t c = 25 c60a e ar t c = 25 c80mj e as t c = 25 c 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 600 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque (to-3p) 1 .13/10 nm/lb.in. weight to-3p 5.5 g to-268 5.0 g g = gate d = drain s = source tab = drain ds99133(04/04) polarht tm power mosfet ixtq 140n10p v dss = 100 v ixtt 140n10p i d25 = 140 a r ds(on) = 11 m ? ? ? ? ? advanced technical information n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density polarht tm dmos transistors utilize proprietary designs and process. us patent is pending. to-3p (ixtq) g d s (tab) to-268 (ixtt) g s d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 45 65 s c iss 4700 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1850 pf c rss 600 pf t d(on) 35 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 60 a 50 ns t d(off) r g = 4 ? (external) 85 ns t f 26 ns q g(on) 155 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 33 nc q gd 85 nc r thjc 0.25 k/w r thck (to-3p) 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 140 a i sm repetitive 300 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a 120 ns -di/dt = 100 a/ s q rm v r = 50 v 2.0 c ixtq 140n10p ixtt 140n10p to-268 outline to-3p (ixtq) outline
? 2004 ixys all rights reserved ixtq 140n10p ixtt 140n10p fig. 2. extended output characteristics @ 25 o c 0 30 60 90 120 150 180 210 240 270 300 012345678910 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 3. output characteristics @ 150 o c 0 20 40 60 80 100 120 140 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 v d s - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 1. output characteristics @ 25 o c 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v d s - volts i d - amperes v gs = 10v 9v 7v 6v 8v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalize d i d = 140a i d = 70a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. drain current 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 0 50 100 150 200 250 300 350 i d - amperes r d s ( o n ) - normalize d t j = 25 o c v gs = 10v t j = 175 o c v gs = 15v
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 ixtq 140n10p ixtt 140n10p fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v g s - volts v ds = 50v i d = 70a i g = 10ma fig. 7. input admittance 0 25 50 75 100 125 150 175 200 225 250 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 v g s - volts i d - amperes t j = 150 o c 25 o c -40 o c fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 0 40 80 120 160 200 240 280 320 i d - amperes g f s - siemens t j = -40 o c 25 o c 150 o c fig. 9. source current vs. source-to-drain voltage 0 50 100 150 200 250 300 0.4 0.6 0.8 1 1.2 1.4 1.6 v s d - volts i s - amperes t j = 150 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 10 100 1000 1 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 175 o c t c = 25 o c r ds(on) limit 10ms 25s
? 2004 ixys all rights reserved ixtq 140n10p ixtt 140n10p fig. 13. m axim um trans ie nt the rm al re s is tance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
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