smd type ic www.kexin.com.cn 1 smd type ic dual n-channel 20-v (d-s) mosfet KI5908DC features trenchfet power mosfets ultra low r ds(on) and excellent power handling in compact footprint absolute maximum ratings ta = 25 parameter symbol 5secs steady state unit drain-source voltage v ds gate-source voltage v gs continuous drain current (t j = 150 )t a =25 5.9 4.4 t a =85 4.2 3.1 pulsed drain current i dm continuous source current (diode conduction)* i s 1.8 0.9 maximum power dissipation * t a =25 2.1 1.1 t a =85 1.1 0.6 operating junction and storage temperature range t j ,t stg soldering recommendations *surface mounted on 1" x 1" fr4 board. v a w 260 i d p d 20 8 -55to150 thermal resistance ratings symbol typical maximum unit t 5sec 50 60 steady-state 90 110 maximum junction-to-foot (drain) steady-state r thjf 30 40 * surface mounted on 1" x 1" fr4 board. /w parameter maximum junction-to-ambient * r thja
www.kexin.com.cn 2 smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 0.4 1.0 v gate-body leakage i gss v ds =0v,v gs = 8v 100 na v ds = 20v, v gs =0v 1 v ds =20v,v gs =0v,t j =85 5 on-state drain current* i d(on) v ds 5v,v gs =4.5v 20 a v gs =4.5v,i d = 4.4 a 0.032 0.04 v gs =2.5v,i d = 4.1a 0.036 0.045 v gs =2.5v,i d =1.9a 0.042 0.052 forward transconductanceb g fs v ds = 10v, i d =4.4a 22 s schottky diode forward voltage* v sd i s =0.9a,v gs =0v 0.8 1.2 v total gate charge q g 57.5 gate-source charge q gs 0.85 gate-drain charge q gd 1 gate resistance r g 1.9 turn-on delay time t d(on) 20 30 rise time t r 36 55 turn-off delay time t d(off) 30 45 fall time t f 12 20 source-drain reverse recovery time t rr i f =0.9a,d i /d t = 100 a/ s 45 90 ns * pulse test :pulse width 300 s,duty cycle 2% ns i dss zero gate voltage drain current r ds(on) drain source on state resistance* a v ds =10v,v gs =4.5v,i d =4.4a v dd =10v,r l =10 ,i d =1a,v gen =10v,r g =6 nc KI5908DC
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