r07ds0130ej0100 rev.1.00 page 1 of 6 sep 24, 2010 preliminary data sheet 2sk4146 mos field effect transistor description the 2sk4146 is n-channel mos field effect transistor designed for high current switching applications. features ? low on-state resistance ? r ds(on) = 10.1 m max. (v gs = 10 v, i d = 40 a) ? low input capacitance ? ciss = 3500 pf typ. (v ds = 10 v) ordering information part no. lead plating packing package 2SK4146-S19-AY ? 1 pure sn (tin) 50 pcs/tube to-220, s19 tube note: ? 1. pb-free (this product does not cont ain pb in the external electrode.) absolute maximum ratings (t a = 25 c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss 75 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25 c) i d(dc) 80 a drain current (pulse) ? 1 i d(pulse) 200 a total power dissipation (t c = 25 c) p t1 84 w total power dissipation (t a = 25 c) p t2 1.5 w channel temperature t ch 150 c storage temperature t stg ? 55 to + 150 c repetitive avalanche current ? 2 i ar 33 a repetitive avalanche energy ? 2 e ar 109 mj notes: ? 1. pw 10 s, duty cycle 1% ? 2. starting t ch = 25 c, v dd = 38 v, r g = 25 , v gs = 20 0 v, l = 100 h thermal resistance channel to case thermal resistance r th(ch-c) 1.49 c/w channel to ambient thermal resistance r th(ch-a) 83.3 c/w r07ds0130ej0100 rev.1.00 sep 24, 2010
2sk4146 chapter title r07ds0130ej0100 rev.1.00 page 2 of 6 sep 24, 2010 electrical characteristics (t a = 25 c) item symbol min typ max unit test conditions zero gate voltage drain current i dss 10 a v ds = 75 v, v gs = 0 v gate leakage current i gss 100 na v gs = 20 v, v ds = 0 v gate to source cut-off voltage v gs(off) 2.0 3.0 4.0 v v ds = 10 v, i d = 1 ma forward transfer admittance ? 1 | y fs | 15 32 s v ds = 10 v, i d = 40 a drain to source on-state resistance ? 1 r ds(on) 7.8 10.1 m v gs = 10 v, i d = 40 a input capacitance c iss 3500 pf v ds = 10 v, output capacitance c oss 620 pf v gs = 0 v, reverse transfer capacitance c rss 160 pf f = 1 mhz turn-on delay time t d(on) 26 ns v dd = 38 v, i d = 40 a, rise time t r 20 ns v gs = 10 v, turn-off delay time t d(off) 85 ns r g = 0 fall time t f 17 ns total gate charge q g 61 nc gate to source charge q gs 16 nc gate to drain charge q gd 20 nc v dd = 60 v, v gs = 10 v, i d = 80 a body diode forward voltage ? 1 v f(s-d) 1.0 1.5 v i f = 80 a, v gs = 0 v reverse recovery time t rr 58 ns reverse recovery charge q rr 125 nc i f = 80 a, v gs = 0 v, di/dt = 100 a/ s note: ? 1. pulsed test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
2sk4146 chapter title r07ds0130ej0100 rev.1.00 page 3 of 6 sep 24, 2010 typical characteristics (t a = 25 c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power dissipation - w 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t c - case temperature - c forward bias safe operating area i d - drain current - a 0.1 1 10 100 1000 0.1 1 10 100 i d(dc) t c = 2 5 c sing le puls e i d(pulse) r d s ( o n ) l i m i t e d ( v g s = 1 i 0 v ) 1 i m i s 1 i 0 m i s p o w er d i s s i p a t i o n l i m i t e d p w = 1 i 0 0 s v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 r th(ch-a) = 83.3 c/w single pulse r th(ch-c) = 1.49 c/w pw - pulse width - s 1 m 10 m 100 m 1 10 100 1000
2sk4146 chapter title r07ds0130ej0100 rev.1.00 page 4 of 6 sep 24, 2010 drain current vs. drain to source voltage forward transf er characteristics i d - drain current - a 0 50 100 150 200 250 0123456 v gs = 10 v pu ls e d v ds - drain to source voltage - v i d - drain current - a 0.01 0.1 1 10 100 1000 0123456 75 c 25 c t a = -55 c v ds = 10 v pu ls e d 150c v gs - gate to source voltage - v gate to source cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate to source cut-off voltage - v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -75 -25 25 75 125 175 v ds = 10 v i d = 1 ma pu ls e d t ch - channel temperature - c | y fs | - forward transfer admittance - s 1 10 100 0.1 1 10 100 v ds = 10 v pu ls e d t a = -55c 25 c 75 c 150 c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 4 8 12 16 20 0 1 10 100 1000 v gs = 10 v pu ls e d i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 4 8 12 16 20 0 4 8 12 16 20 80 a i d = 16 a 40 a pu ls e d v gs - gate to source voltage - v
2sk4146 chapter title r07ds0130ej0100 rev.1.00 page 5 of 6 sep 24, 2010 drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0 4 8 12 16 20 -75 -25 25 75 125 175 i d = 40 a v gs = 10 v pu ls e d t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 10 100 1000 10000 0.1 1 10 100 c iss c oss c rs s v gs = 0 v f = 1 mhz v ds - drain to source voltage - v switching characteristics dynamic input/output characteristics t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 1000 0.1 1 10 100 t d ( off ) t d ( on ) t f t r v dd = 38 v v gs = 10 v r g = 0 ? i d - drain current - a v ds - drain to source voltage - v 0 20 40 60 80 0 10203040506070 0 4 8 12 16 i d = 80 a 15 v 38 v v dd = 60 v v ds v gs q g - gate charge - nc v gs - gate to source voltage - v source to drain diode forward voltage reverse recovery time vs. diode forward current i f - diode forward current - a 0.1 1 10 100 1000 0.0 0.5 1.0 1.5 v gs = 10 v 0 v pu ls e d v f(s-d) - source to drain voltage - v t rr - reverse recovery time - ns 1 10 100 1000 0.1 1 10 100 di/dt = 100 a/ s v gs = 0 v i f - diode forward current - a
2sk4146 chapter title r07ds0130ej0100 rev.1.00 page 6 of 6 sep 24, 2010 package drawings (unit: mm) to-220 (mass: 1.9 g typ.) 4.8 max. 1 2 3 10.2 max. 8.7 typ. 3.60.2 4 2.80.3 1.520.2 0.80.1 2.54 typ. 2.54 typ. 6.3 min. 3.0 typ. 15.9 max. 12.7 min. 1.30.2 0.50.2 2.40.2 1.gate 2.drain 3.source 4.fin (drain) equivalent circuit source body diode gate drain remark strong electric field, when exposed to this devic e, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history 2sk4146 description rev. date page summary 1.00 sep 24, 2010 ? first edition issued
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