a p4503agem-h f advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 30v lower gate charge r ds(on) 26m fast switching performance i d 7a rohs compliant & halogen-free p-ch bv dss -30v r ds(on) 52m description i d -5a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage 30 -30 v v gs gate-source voltage + 20 + 20 v i d @t a =25 continuous drain current 3 7.0 -5.0 a i d @t a =70 continuous drain current 3 5.5 -4.0 a i dm pulsed drain current 1 20 -20 a p d @t a =25 total power dissipation 2 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice 201304011 parameter 1 thermal data halogen-free product ap4503a series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the so-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. s1 g1 s2 g2 d1 d1 d2 d2 so-8 s1 g1 d1 s2 g2 d2
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7a - 18 26 m ? v gs =4.5v, i d =4a - 24 38 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.4 3 v g fs forward transconductance v ds =10v, i d =8a - 15 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 30 ua q g total gate charge i d =7a - 7 11.2 nc q gs gate-source charge v ds =15v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3 - nc t d(on) turn-on delay time v ds =15v - 7 - ns t r rise time i d =1a - 5 - ns t d(off) turn-off delay time r g =3.3 -18- ns t f fall time v gs =10v - 3 - ns c iss input capacitance v gs =0v - 800 1280 pf c oss output capacitance v ds =15v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 80 - pf r g gate resistance f=1.0mhz - 6 12 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time i s =7a, v gs =0 v , - 15 - ns q rr reverse recovery charge di/dt=100a/s - 8 - nc 2 AP4503AGEM-HF
a p4503agem-h f p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-4a - 42 52 m ? v gs =-4.5v, i d =-3a - 54 80 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 -1.5 -3 v g fs forward transconductance v ds =-10v, i d =-4a - 9 - s i dss drain-source leakage current v ds =-24v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 30 ua q g total gate charge i d =-4a - 7 11.2 nc q gs gate-source charge v ds =-15v - 2.2 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 2.7 - nc t d(on) turn-on delay time v ds =-15v - 8 - ns t r rise time i d =-1a - 4.5 - ns t d(off) turn-off delay time r g =3.3 -22- ns t f fall time v gs =-10v - 5 - ns c iss input capacitance v gs =0v - 830 1330 pf c oss output capacitance v ds =-15v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf r g gate resistance f=1.0mhz - 6 12 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.7a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-4a, v gs =0v, - 18 - ns q rr reverse recovery charge di/dt=100a/s - 13 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 135 /w when mounted on min. copper pad.
ap4503agem-h f n-channel fig 1. typical output characteristics fig 2. typical output characteristics 30 -30 fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4 0 10 20 30 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 10 20 30 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 16 18 20 22 24 26 28 246810 v gs , gate-to-source voltage (v) r ds(on0 (m ) i d = 4a t a = 25 o c 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =7a v g =10v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =250ua
a p4503agem-h f n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics 30 -30 fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. ambient temperature 5 0 2 4 6 8 10 03691215 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =7a v ds =15v 0 200 400 600 800 1000 1200 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on) 0 10 20 30 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j =-40 o c 0 2 4 6 8 10 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a)
ap4503agem-h f p-channel fig 1. typical output characteristics fig 2. typical output characteristics 30 -30 fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6 0 4 8 12 16 20 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -6.0v -5.0v v g = - 4.0v 0 4 8 12 16 20 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c -10v -7.0v -6.0v -5.0v v g = - 4.0v 40 50 60 70 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -2 a t a =25 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -4 a v g = - 10v 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d = -250ua
a p4503agem-h f p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics 30 -30 fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. ambient temperature 7 0 2 4 6 8 10 0481216 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -4a v ds = -15v 0 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on) 0 4 8 12 16 20 01234567 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v 0 1 2 3 4 5 6 25 50 75 100 125 150 t a , ambient temperature ( o c ) -i d , drain current (a) t j = -40 o c
|
