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  savantic semiconductor product specification silicon pnp power transistors 2SB1368 d escription with to-220f package complement to type 2sd2060 low collector saturation voltage: v ce(sat) =-1.7v(max) at i c =-3a,i b =-0.3a collector power dissipation: p c =25w(t c =25  ) applications with general purpose applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -4 a i b base current -0.4 a t a =25 2.0 p c collector dissipation t c =25 25 w t j junction temperature 150  t stg storage temperature -55~150  fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1368 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;i b =0 -80 v v cesat collector-emitter saturation voltage i c =-3a ;i b =-0.3a -1.0 -1.7 v v be base-emitter on voltage i c =-3a;v ce =-5v -1.0 -1.5 v i cbo collector cut-off current v cb =-80v; i e =0 -30 a i ebo emitter cut-off current v eb =-5v; i c =0 -100 a h fe-1 dc current gain i c =-0.5a ; v ce =-5v 40 240 h fe-2 dc current gain i c =-3a ; v ce =-5v 15 f t transition frequency i c =-0.5a ; v ce =-5v 9.0 mhz c ob collector output capacitance f=1mhz;v cb =10v 130 pf  h fe-1 classifications r o y 40-80 70-140 120-240
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1368 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon pnp power transistors 2SB1368


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