ao6402 30v n-channel mosfet general description product summary v ds i d (at v gs =10v) 5a r ds(on) (at v gs =10v) < 31m w r ds(on) (at v gs =4.5v) < 43m w symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl junction and storage temperature range -55 to 150 c power dissipation b p d t a =70c 0.8 w 1.25 t a =25c units thermal characteristics parameter typ max the ao6402 uses advanced trench technology to provi de excellent r ds(on) and low gate charge. this device may be used as a load switch or in pwm applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v drain-source voltage 30 i d maximum junction-to-ambient a d v 20 continuous drain current 5 gate-source voltage 4 t a =25c t a =70c pulsed drain current c c/w r q ja 70 maximum junction-to-ambient a 82 110 100 20 a maximum junction-to-lead c/w c/w 56 130 g ds tsop6 top view bottom view pin1 d d g d s d top view rev 8: february 2011 www.aosmd.com page 1 of 5
ao6402 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.2 1.8 2.4 v i d(on) 25 a 25.5 31 t j =125c 41 50 34 43 m w g fs 15 s v sd 0.76 1 v i s 1.5 a c iss 255 310 pf c oss 45 pf c rss 35 50 pf r g 1.6 3.25 4.9 w q g(10v) 5.2 6.3 nc qg (4.5v) 2.55 3.2 q gs 0.85 nc q gd 1.3 nc t d(on) 4.5 ns t r 2.5 ns t d(off) 14.5 ns t f 3.5 ns t rr 8.5 ns q rr 2.2 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. input capacitance output capacitance turn-on rise time i f =5a, di/dt=100a/ m s v gs =0v, v ds =15v, f=1mhz switching parameters body diode reverse recovery charge v ds =v gs i d =250 m a v gs =4.5v, i d =4a forward transconductance body diode reverse recovery time v gs =10v, i d =5a reverse transfer capacitance i f =5a, di/dt=100a/ m s maximum body-diode continuous current m w v gs =10v, v ds =15v, r l =3 w , r gen =3 w dynamic parameters turn-off delaytime turn-on delaytime gate resistance v gs =0v, v ds =0v, f=1mhz v ds =5v, i d =5a r ds(on) static drain-source on-resistance i dss m a zero gate voltage drain current turn-off fall time total gate charge v gs =10v, v ds =15v, i d =5a gate source charge gate drain charge i s =1a,v gs =0v diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =10v, v ds =5v v ds =0v, v gs =20v gate-body leakage current a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. rev 8: february 2011 www.aosmd.com page 2 of 5
ao6402 typical electrical and thermal characteristics 17 52 10 0 18 40 0 5 10 15 1 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 20 25 30 35 40 0 3 6 9 12 15 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =10v i d =5a v gs =4.5v i d =4a 20 40 60 80 100 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v i d =5a 25c 125c 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =3v 7v 10v 3.5v 4v 4.5v v gs =10v rev 8: february 2011 www.aosmd.com page 3 of 5
ao6402 typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 6 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =15v i d =5a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 11: single pulse power rating junction-to- ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) z q qq q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =130c/w single pulse rev 8: february 2011 www.aosmd.com page 4 of 5
ao6402 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 8: february 2011 www.aosmd.com page 5 of 5
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