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? semiconductor components industries, llc, 1999 february, 2000 rev. 2 1 publication order number: 2n6394/d
preferred device
reverse blocking thyristors designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. ? glass passivated junctions with center gate geometry for greater parameter uniformity and stability ? small, rugged, thermowatt construction for low thermal resistance, high heat dissipation and durability ? blocking voltage to 800 volts ? device marking: logo, device type, e.g., 2n6394, date code *maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive offstate voltage (1) (t j = 40 to 125 c, sine wave, 50 to 60 hz, gate open) 2n6394 2n6395 2n6397 2n6399 v drm, v rrm 50 100 400 800 volts on-state rms current (180 conduction angles; t c = 90 c) i t(rms) 12 a peak non-repetitive surge current (1/2 cycle, sine wave, 60 hz, t j = 125 c) i tsm 100 a circuit fusing (t = 8.3 ms) i 2 t 40 a 2 s forward peak gate power (pulse width 1.0 m s, t c = 90 c) p gm 20 watts forward average gate power (t = 8.3 ms, t c = 90 c) p g(av) 0.5 watts forward peak gate current (pulse width 1.0 m s, t c = 90 c) i gm 2.0 a operating junction temperature range t j 40 to +125 c storage temperature range t stg 40 to +150 c *indicates jedec registered data (1) v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. scrs 12 amperes rms 50 thru 800 volts preferred devices are recommended choices for future use and best overall value. device package shipping ordering information 2n6394 to220ab 500/box 2n6395 to220ab 2n6397 to220ab http://onsemi.com 500/box 500/box k g a to220ab case 221a style 3 1 2 3 4 pin assignment 1 2 3 anode gate cathode 4 anode 2n6399 to220ab 500/box
2n6394 series http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 2.0 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t c = 25 c unless otherwise noted.) characteristic symbol min typ max unit off characteristics * peak repetitive forward or reverse blocking current (v ak = rated v drm or v rrm , gate open) t j = 25 c t j = 125 c i drm , i rrm e e e e 10 2.0 m a ma on characteristics * peak forward onstate voltage (1) (i tm = 24 a peak) v tm e 1.7 2.2 volts * gate tri gger current (continuous dc) (v d = 12 vdc, r l = 100 ohms) i gt e 5.0 30 ma * gate tri gger v oltage (continuous dc) (v d = 12 vdc, r l = 100 ohms) v gt e 0.7 1.5 volts gate n ontrigger v oltage (v d = 12 vdc, r l = 100 ohms, t j = 125 c) v gd 0.2 e e volts * holding current (v d = 12 vdc, initiating current = 200 ma, gate open) i h e 6.0 50 ma turn-on time (i tm = 12 a, i gt = 40 madc, v d = rated v drm ) t gt e 1.0 2.0 m s turn-off time (v d = rated v drm ) (i tm = 12 a, i r = 12 a) (i tm = 12 a, i r = 12 a, t j = 125 c) t q e e 15 35 e e m s dynamic characteristics critical rateofrise of off-state voltage exponential (v d = rated v drm , t j = 125 c) dv/dt e 50 e v/ m s *indicates jedec registered data (1) pulse test: pulse width 300 m sec, duty cycle 2%.
2n6394 series http://onsemi.com 3 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode forward blocking region i rrm at v rrm (off state) c t , maximum allowable case temperature ( c) 6.0 120 90 100 110 130 60 a = 30 0 1.0 2.0 3.0 8.0 a = conduction angle i t(av) , average on-state forward current (amps) a 90 p , average power (watts) (av) 12 0 4.0 8.0 20 t j 125 c i t(av) , average on-state current (amps) 7.0 0 1.0 2.0 3.0 8.0 a = conduction angle a 4.0 5.0 7.0 180 dc 10 2.0 6.0 18 14 16 4.0 5.0 6.0 60 a = 30 90 180 dc 125 95 105 115 figure 1. current derating figure 2. maximum onstate power dissipation
2n6394 series http://onsemi.com 4 1.0 0.02 0.03 0.05 0.07 0.1 100 0.2 0.3 0.5 0.7 0.2 0.3 0.5 1.0 2.0 1.2 0.1 z q jc(t) = r q jc ? r(t) 1.0 60 surge is preceded and followed by rated current t j = 125 c f = 60 hz number of cycles 70 80 90 100 20 2.0 3.0 4.0 6.0 8.0 10 0.1 0.4 0.01 t, time (ms) 3.0 5.0 50 0.2 0.3 0.5 0.7 7.0 5.0 1.0 2.0 10 50 3.0 20 30 70 v th , instantaneous onstate voltage (volts) 2.8 4.4 3.6 5.2 6.0 2.0 30 50 100 200 300 500 2.0 k 10 3.0 k 5.0 k 10 k 1.0 k i , peak surge current (amp) tsm r(t), transient thermal resistance (normalized) tm i , instantaneous onstate current (amps) t j = 25 c 125 c 1 cycle 55 65 75 85 95 figure 3. onstate characteristics figure 4. maximum nonrepetitive surge current figure 5. thermal response
2n6394 series http://onsemi.com 5 i , holding current (ma) h typical characteristics 140 120 100 80 60 40 0 60 30 20 40 20 t j , junction temperature ( c) 20 10 3.0 3.0 1.0 0.7 0.5 0.3 5.0 2.0 off-state voltage = 12 v off-state voltage = 12 v 30 50 20 10 5.0 70 7.0 140 120 100 80 60 40 0 20 40 20 t j , junction temperature ( c) 200 100 50 20 10 5.0 0.2 1.0 0.5 2.0 pulse width ( s) i gtm i gt v gt 140 120 100 80 60 40 0 60 1.0 20 40 20 t j , junction temperature ( c) 0.8 0.6 0.4 0.5 , p eak ga t e c u rr en t (ma) 3.0 100 200 300 16 0 , ga t e tr igge r volt age ( volt s) 0.7 1.1 0.9 off-state voltage = 12 v off-state voltage = 12 v 7.0 t j = 40 c 25 c 100 c , gate trigger current (normalized) figure 6. typical gate trigger current versus pulse width figure 7. typical gate trigger current versus temperature figure 8. typical gate trigger voltage versus temperature figure 9. typical holding current versus temperature
2n6394 series http://onsemi.com 6 package dimensions to220ab case 221a07 issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.022 0.36 0.55 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 1.15 z 0.080 2.04 a k l v g d n z h q f b 123 4 t seating plane s r j u t c style 3: pin 1. cathode 2. anode 3. gate 4. anode
2n6394 series http://onsemi.com 7 notes
2n6394 series http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent r ights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into t he body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1418549 phone : 81357402745 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. 2n6394/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (mf 1:00pm to 5:00pm munich time) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (mf 1:00pm to 5:00pm toulouse time) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (mf 12:00pm to 5:00pm uk time) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, england, ireland
on semiconductor - product catalog page 1 of 2 file:\\roarer\root\data13\imaging\bitting\cpl_mismatch\20000817\08162000_3\onsm\08032000\0,1824,products1_prodsum_base=2n6397t,00.html 8/19/00 ? ? register ??|?? site index ??|?? contact us ??|?? home ??|?? china site ?? ? press room ? sales & distribution ? about us ? quality ? trade?shows ? investor relations ? employment products ??? product catalog ??? new products ??? on/cherry products ??? documentation ????? selector guide ????? on-line ordering ??? models ??? reliability data ??? pcn ??? samples search ????? order status ??? tech support ? ? product quick links ? associated documents item short desc size data sheet silicon controlled rectifiers 111?kb?pdf ? device 2n6397t silicon controlled rectifier 12a 400v ? ? reverse blocking thyristors designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. ? features: ? glass passivated junctions with center gate geometry for greater parameter uniformity and stability ? small, rugged, thermowatt construction for low thermal resistance, high heat dissipation and durability ? blocking voltage to 800 volts ? device marking: logo, device type, e.g., 2n6394, date code ? ? orderable parts action orderable part short desc. package desc. pin count case outline status n/a 2n6397t silicon controlled to-220 3 221a-09 active
on semiconductor - product catalog page 2 of 2 file:\\roarer\root\data13\imaging\bitting\cpl_mismatch\20000817\08162000_3\onsm\08032000\0,1824,products1_prodsum_base=2n6397t,00.html 8/19/00 rectifier 12a 400v ? ? register ??|?? site index ??|?? contact us ??|?? home ??|?? china site ?? products ?|? press room ?|? sales ?|? about ?|? investor ?|? employment ? semiconductor components industries, l.l.c., 1999, 2000. all rights reserved. ?? terms of use.

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