advanced power n-channel insulated gate electronics corp. bipolar transistor high input impedance v ce high pick current capability i cp 4.5v gate drive strobe flash applications absolute maximum ratings electrical characteristics@t j =25 o c(unless otherwise specified) symbol min. typ. max. units i ges - - 10 ua i ces - - 10 ua v ce(sat) -68v v ge(th) 0.35 - 1.2 v q g - 64.5 - nc q ge -7- nc q gc -30- nc t d(on) - 11.5 - ns t r - 24.5 - ns t d(off) - 150 - ns t f - 3.3 - s c ies - 2227 - pf c oes - 200 - pf c res -79- pf rth ja 1 --50 /w notes: 1.surface mounted on 1 in 2 copper pad of fr4 board ; 125 /w when mounted on min. copper pad. data and specifications subject to change without notice thermal resistance junction-ambient v ge =4.5v fall time input capacitance output capacitance f=1.0mhz v ge = 6v, v ce =0v t stg turn-off delay time v ge =0v i c =50a r g =25 rise time t j gate-collector charge turn-on delay time collector-emitter saturation voltage gate threshold voltage total gate charge gate-emitter leakage current collector-emitter leakage current (tj=25 ) a reverse transfer capacitance v ce =450v, v ge =0v v ge =4.5v, i cp =150a (pulsed) v ce =v ge , i c =250ua i c =50a v ce =360v v ge =10v v ce =25v test conditions AP25G45EM symbol v ce 450v 150a rating collector-emitter voltage units v 450 6 150 8 pulsed collector current parameter maximum power dissipation v ge i cp i gep pulsed gate-emitter voltage p d @t c =25 1 -55 to 150 -55 to 150 w parameter storage temperature range v 2.5 200411031 v cc =225v v gate-emitter voltage gate-emitter charge operating junction temperature range g c e e e e g c c c c so-8
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. collector current v.s. fig 4. collector- emitter saturation voltage gate-emitter voltage v.s. junction temperature fig 5. gate threshold voltage fig 6. minimum gate drive area v.s. junction temperature AP25G45EM 0 20 40 60 80 100 120 140 160 180 0246810 v ce , collector-emitter voltage (v) i c , collector current (a) 4.5v 4.0v t a =25 o c vg=1.0v 5.0v 3.0v 2.0v 0 20 40 60 80 100 120 140 024681012 v ce , collector-emitter voltage (v) i c , collector current (a) 4.5v 4.0v t a =150 o c vg=1.0v 5.0v 3.0v 2.0v 0 2 4 6 8 10 0 20 40 60 80 100 120 140 160 junction temperature ( o c) v ce(sat), saturation voltage(v) v ge =4.5v i c =130a i c =50a i c =100a 0 0.3 0.6 0.9 1.2 1.5 -50 0 50 100 150 junction temperature ( o c ) v ge(th) (v) 0 40 80 120 160 200 01234567 v ge , gate-to-emitter voltage (v) i cp , peak collector current (a) 0 40 80 120 160 0123456 v ge , cate-emitter voltage (v) i c , collector current(a) v ce =4.5v 25 70 125 t a =150
fig 7. typical capacitance characterisitic s fig 8. gate charge waveform fig 9. switching time test circuit fig 10. switching time waveform fig 11. gate charge test circuit fig 12. application test circuit AP25G45EM t d(on) t r t d(off) t f v ce v ge 10% 90% 300v to the oscilloscope - + c g v ce v ge i c i g 1~3 ma e v cm v cm = 300v c m =100uf i cp = 150a v g =5v + _ c m r g v trig igbt v g flasher 10 100 1000 10000 1 5 9 1317212529 v ce , collector-emitter voltage (v) capacitance (pf) f =1.0mhz cies coes cres to the oscilloscope - + 5v c g e v ce v ge r g r c 225 v 0 2 4 6 8 10 12 0 30 60 90 120 150 q g , gate charge (nc) v ge , gate -emitter voltage (v) i cp =50a v cc =360v
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