gunter semiconductor gmbh gunter semiconductor gmbh gunter semiconductor gmbh gunter semiconductor gmbh GFCF20 n channel power mosfet chip specification general description: * advanced process technology * dynamic dv/dt rating * 150 operating temperature * fast switching * fully avalanche rated mechanical data: d11 dimension 3.56mm x 3.63mm thickness: 480 ? m metallization : top : : al backside : crniag / au suggested bonding conditions: die mounting: solder perform 95/5 pbsn or 92.5./2.5/5 pbagin source bonding wire : 5 mil al absolute maximum rating @ta=25 characteristics symbol limit unit test conditions drain-to-source breakdown voltage v(br)dss 900 v vgs=0v, id=250 ? static drain-to - source on-resistance rds(on) 8 ? vgs=10v, id=1 continuous drain current ( in target package) id@25 1.7 a vgs=10v continuous drain current ( in target package) id@100 1.1 a vgs=10v operation junction tj -55~150 storage temperature t str -55~150 target device: irfbf20 to-220ab p d 54 w @tc=25
|
