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| semitop ? 2 igbt module SK20GH123 preliminary data features ! " # ! ! $ % # & ' ( ' ) * + , - . / . 0 typical applications 1 $ 2 1 ( " 1 gh absolute maximum ratings # 3 0 / 4 * symbol conditions values units igbt 5 , 1 # 6 3 0 / 4 8 0 9 9 5 $ # 6 3 8 0 / 4 # 3 0 / 4 0 . : # 3 ; 9 4 8 / : $ < = $ < = 3 0 $ . 9 : 5 % , 1 > 0 9 5 5 3 - 9 9 5 ? 5 % , @ 0 9 5 ? 5 , 1 a 8 0 9 9 5 # 6 3 8 0 / 4 8 9 b inverse diode $ c # 6 3 8 / 9 4 # 3 0 / 4 0 d : # 3 ; 9 4 8 e : $ c < = $ c < = 3 0 $ c : $ c 1 = 3 8 9 ? 2 # 6 3 8 / 9 4 8 ; 9 : module $ < = 1 : # 2 6 ! d 9 + + + f 8 / 9 4 # ! d 9 + + + f 8 0 / 4 5 : * 8 + 0 / 9 9 5 characteristics # 3 0 / 4 * symbol conditions min. typ. max. units igbt 5 % , 5 % , 3 5 , * $ 3 9 * - : d * / / * / - * / 5 $ , 1 5 % , 3 9 5 * 5 , 3 5 , 1 # 6 3 0 / 4 9 * 8 : # 6 3 8 0 / 4 : $ % , 1 5 , 3 9 5 * 5 % , 3 . 9 5 # 6 3 0 / 4 d ; 9 : # 6 3 8 0 / 4 : 5 , 9 # 6 3 0 / 4 8 * 0 5 # 6 3 8 0 / 4 8 * 0 5 , 5 % , 3 8 / 5 # 6 3 0 / 4 ; - g # 6 3 8 0 / 4 8 0 - g 5 , $ 3 8 / : * 5 % , 3 8 / 5 # 6 3 0 / 4 2 + 0 0 * / . 5 # 6 3 8 0 / 4 2 + . * 8 . * e 5 8 c 5 , 3 0 / * 5 % , 3 9 5 3 8 = ) 9 * 8 / c 9 * 9 e c h % 5 % , 3 9 + + + 0 9 5 i 9 . / < % 3 d 9 g 5 3 - 9 9 5 d / , $ 3 8 / : 0 j < % 3 d 9 g # 6 3 8 0 / 4 0 / 9 5 % , 3 > 8 / 5 e 9 , 8 * ; j < 6 ! $ % # 8 * d k l m SK20GH123 1 30-10-2006 dil ? by semikron semitop ? 2 igbt module SK20GH123 preliminary data features ! " # ! ! $ % # & ' ( ' ) * + , - . / . 0 typical applications 1 $ 2 1 ( " 1 gh characteristics symbol conditions min. typ. max. units inverse diode 5 c 3 5 , $ c 3 8 / : ? 5 % , 3 9 5 # 6 3 0 / 4 2 + 0 0 * / 5 # 6 3 8 0 / 4 2 + 8 * ; 0 * . 5 5 c 9 # 6 3 8 0 / 4 8 8 * 0 5 c # 6 3 8 0 / 4 / . e . g $ < < = $ c 3 8 / : # 6 3 8 0 / 4 8 - : h l 3 ! 0 9 9 : l b 0 * e b , 5 3 - 9 9 5 9 * - j < 6 ! 8 * e k l m = n = 8 0 0 8 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. SK20GH123 2 30-10-2006 dil ? by semikron fig. 1 typ. output characteristic, inclusive r cc'+ ee' fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 6 typ. gate charge characteristic SK20GH123 3 30-10-2006 dil ? by semikron fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 10 cal diode forward characteristic SK20GH123 4 30-10-2006 dil ? by semikron ul recognized file no. e 63 532 # / 1 * " * o 0 # / % SK20GH123 5 30-10-2006 dil ? by semikron |
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