w e s t c o d e semiconductors i trms = 2 x 80 a i tavm = 2 x 51 a v rrm = 800 - 1800 v v rsm v rrm type v dsm v drm vv 900 800 wpt 44-08 wph 44-08 1300 1200 wpt 44-12 wph 44-12 1500 1400 wpt 44-14 wph 44-14 1700 1600 wpt 44-16 wph 44-16 1900 1800 wpt 44-18 wph 44-18 wpt 44 features l international standard package, jedec to-240 aa l direct copper bonded al 2 o 3 -ceramic base plate l planar passivated chips l isolation voltage 3600 v~ l gate-cathode twin pins for wpt applications l dc motor control l softstart ac motor controller l light, heat and temperature control advantages l space and weight savings l simple mounting with two screws l improved temperature and power cycling l reduced protection circuits 6 7 4 5 3 2 1 3 6 7 1 5 4 2 3 1 5 2 symbol test conditions maximum ratings i trms , i frms t vj = t vjm 80 a i tavm , i favm t c = 83 c; 180 sine 51 a t c = 85 c; 180 sine 49 a i tsm , i fsm t vj = 45 c; t = 10 ms (50 hz), sine 1150 a v r = 0 t = 8.3 ms (60 hz), sine 1230 a t vj = t vjm t = 10 ms (50 hz), sine 1000 a v r = 0 t = 8.3 ms (60 hz), sine 1070 a i 2 dt t vj = 45 c t = 10 ms (50 hz), sine 6600 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 6280 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 5000 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 4750 a 2 s (di/dt) cr t vj = t vjm repetitive, i t = 150 a 150 a/ m s f =50 hz, t p =200 m s v d = 2/3 v drm i g = 0.45 a non repetitive, i t = i tavm 500 a/ m s di g /dt = 0.45 a/ m s (dv/dt) cr t vj = t vjm ;v dr = 2/3 v drm 1000 v/ m s r gk = ; method 1 (linear voltage rise) p gm t vj = t vjm t p = 30 m s10w i t = i tavm t p = 300 m s5w p gav 0.5 w v rgm 10 v t vj -40...+125 c t vjm 125 c t stg -40...+125 c v isol 50/60 hz, rms t = 1 min 3000 v~ i isol 1 ma t = 1 s 3600 v~ m d mounting torque (m5) 2.5-4.0/22-35 nm/lb.in. terminal connection torque (m5) 2.5-4.0/22-35 nm/lb.in. weight typical including screws 90 g wph 44 to-240 aa thyristor modules thyristor/diode modules .com .com .com 4 .com u datasheet
symbol test conditions characteristic values i rrm , i drm t vj = t vjm ; v r = v rrm ; v d = v drm 5ma v t , v f i t , i f = 200 a; t vj = 25 c 1.75 v v t0 for power-loss calculations only (t vj = 125 c) 0.85 v r t 5.3 m w v gt v d = 6 v; t vj = 25 c 1.5 v t vj = -40 c 1.6 v i gt v d = 6 v; t vj = 25 c 100 ma t vj = -40 c 200 ma v gd t vj = t vjm ;v d = 2/3 v drm 0.2 v i gd 10 ma i l t vj = 25 c; t p = 10 m s, v d = 6 v 450 ma i g = 0.45 a; di g /dt = 0.45 a/ m s i h t vj = 25 c; v d = 6 v; r gk = 200 ma t gd t vj = 25 c; v d = 1/2 v drm 2 m s i g = 0.45 a; di g /dt = 0.45 a/ m s t q t vj = t vjm ; i t = 120 a, t p = 200 m s; -di/dt = 10 a/ m s typ. 150 m s v r = 100 v; dv/dt = 20 v/ m s; v d = 2/3 v drm q s t vj = t vjm ; i t , i f = 50 a, -di/dt = 0.64 a/ m s90 m c i rm 11 a r thjc per thyristor/diode; dc current 0.53 k/w per module other values 0.265 k/w r thjk per thyristor/diode; dc current see fig. 8/9 0.73 k/w per module 0.365 k/w d s creepage distance on surface 12.7 mm d a strike distance through air 9.6 mm a maximum allowable acceleration 50 m/s 2 optional accessories for module-type wpt keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red type u9910 ul 758, style 1385, csa class 5851, guide 460-1-1 dimensions in mm (1 mm = 0.0394") wpt 44 wph 44 10 100 1000 1 10 100 1000 10 0 10 1 10 2 10 3 10 4 0.1 1 10 i g v g ma ma i g 1: i gt , t vj = 125 c 2: i gt , t vj = 25 c 3: i gt , t vj = -40 c m s t gd v 4: p gav = 0.5 w 5: p gm = 5 w 6: p gm = 10 w i gd , t vj = 125 c 3 4 2 1 5 6 limit typ. t vj = 25 c fig. 1 gate trigger characteristics fig. 2 gate trigger delay time .com .com .com .com 4 .com u datasheet
fig. 3 surge overload current i tsm , i fsm : crest value, t: duration fig. 4 i 2 dt versus time (1-10 ms) fig. 4a maximum forward current at case temperature fig. 5 power dissipation versus on- state current and ambient temperature (per thyristor or diode) fig. 6 three phase rectifier bridge: power dissipation versus direct output current and ambient temperature circuit b6 3 x wpt 44 or 3 x wph 44 .com .com .com .com 4 .com u datasheet
w e s t c o d e semiconductors uk : westcode semiconductors ltd p.o. box 97, chippenham, wiltshire, england sn15 1jl tel : +44 (0)1249 444524 fax : +44 (0)1249 659448 e-mail : wsl.sales@westcode.com usa : westcode semiconductors inc 3270 cherry avenue long beach, california 90807 tel : 562 595 6971 fax : 562 595 8182 www: http//www.westcode.com in the interest of product improvement westcode reserves the right to change specifications at any time without notice. ? westc ode semiconductors ltd fig. 7 three phase ac-controller: power dissipation versus rms output current and ambient temperature fig. 8 transient thermal impedance junction to case (per thyristor or diode) fig. 9 transient thermal impedance junction to heatsink (per thyristor or diode) r thjc for various conduction angles d: d r thjc (k/w) dc 0.53 180 0.55 120 0.58 60 0.6 30 0.62 constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.015 0.0035 2 0.026 0.02 3 0.489 0.195 r thjk for various conduction angles d: dr thjk (k/w) dc 0.73 180 0.75 120 0.78 60 0.8 30 0.82 constants for z thjk calculation: ir thi (k/w) t i (s) 1 0.015 0.0035 2 0.026 0.02 3 0.489 0.195 4 0.2 0.68 circuit w 3 3 x wpt 44 or 3 x wph 44 wpt 44 wph 44 wpt 44 wph 44 .com .com .com 4 .com u datasheet
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