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rev 2.0 ?2012 advanced linear devices, inc. 415 tasman drive, sunnyvale, ca 94089-1706 tel: (408) 747-1155 fax: (408) 747-1286 www.aldinc.com ald1107/ald1117 a dvanced l inear d evices, i nc. quad/dual p-channel matched pair mosfet array general description the ald1107/ald1117 are monolithic quad/dual p-channel enhance- ment mode matched mosfet transistor arrays intended for a broad range of precision analog applications. the ald1107/ald1117 offer high input impedance and negative current temperature coefficient. the transistor pairs are matched for minimum offset voltage and differential thermal response, and they are designed for precision analog switching and amplifying applications in +2v to +12v systems where low input bias current, low input capacitance and fast switching speed are desired. these mosfet devices feature very large (almost infinite) current gain in a low frequency, or near dc, operating environment. the ald1107/ald1117 are building blocks for differential amplifier input stages, transmission gates, and multiplexer applications, current sources and many precision analog circuits. applications ? precision current mirrors ? precision current sources ? voltage choppers ? differential amplifier input stage ? voltage comparator ? data converters ? sample and hold ? analog signal processing block diagram features ? low threshold voltage of -0.7v ? low input capacitance ? low vos 2mv typical ? high input impedance -- 10 14 w typical ? negative current (i ds ) temperature coefficient ? enhancement-mode (normally off) ? dc current gain 10 9 ? low input and output leakage currents ? rohs compliant pin configuration top view sbl, pbl, db packages top view sal, pal, da packages operating temperature range* 0 c to +70 c0 c to +70 c -55 c to +125 c 8-pin soic 8-pin plastic dip 8-pin cerdip package package package ald1117sal ald1117pal ald1117da 14-pin soic 14-pin plastic dip 14-pin cerdip package package package ald1107sbl ald1107pbl ALD1107DB ordering information (l suffix denotes lead-free (rohs)) * contact factory for leaded (non-rohs) or high temperature versions. block diagram d p2 g p2 s p2 g p1 s p1 1 2 3 4 5 6 7 8 d p1 v + v - ald1117 d p2 g p2 s p2 g p3 s p3 g p1 s p1 d p4 g p4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 d p1 v + v - d p3 s p4 ald1107 d p1 (1) d p2 (8) ~ g p1 (2) s p1 (3) s p2 (6) v - (4) v+ (5) g p2 (7) ald1117 d p1 (1) d p2 (14) g p1 (2) s p1 (3) s p2 (12) v + (11) g p2 (13) d p3 (10) d p4 (5) g p3 (9) s p3 (8) s p4 (7) ~ v - (4) v + (11) g p4 (6) ald1107
ald1107/ald1117 advanced linear devices 2 of 11 drain-source voltage, v ds -10.6v gate-source voltage, v gs -10.6v power dissipation 500mw operating temperature range sal, pal, sbl, pbl packages 0 c to +70 c da, db packages -55 c to +125 c storage temperature range -65 c to +150 c lead temperature, 10 seconds +260 c caution: esd sensitive device. use static control procedures in esd controlled environment. absolute maximum ratings gate threshold v t -0.4 -0.7 -1.0 -0.4 -0.7 -1.0 v i ds = -1.0 m a v gs = v ds voltage offset voltage v os 2 10 2 10 mv i ds = -10 m a v gs = v ds v gs1 -v gs2 gate threshold temperature tc vt -1.3 -1.3 mv/ c drift 2 on drain i ds (on) -1.3 -2 -1.3 -2 ma v gs = v ds = -5v current transconductance g is 0.25 0.67 0.25 0.67 mmho v ds = -5v i ds = -10ma mismatch d g fs 0.5 0.5 % output g os 40 40 m mho v ds = -5v i ds = -10ma conductance drain source r ds (on) 1200 1800 1200 1800 w v ds = -0.1v v gs = -5v on resistance drain source on resistance d r ds (on) 0.5 0.5 % v ds = -0.1v v gs = -5v mismatch drain source breakdown bv dss -12 -12 v i ds = -1.0 m a v gs = 0v voltage off drain i ds (off) 10 400 10 400 pa v ds = -12v v gs = 0v current 1 44nat a = 125 c gate leakage i gss 0.1 10 0.1 10 pa v ds = 0v v gs = -12v current 1 1 na t a = 125 c input c iss 13 13pf capacitance 2 operating electrical characteristics t a = 25 c unless otherwise specified ald1107 ald1117 test parameter symbol min typ max min typ max unit conditions notes: 1 consists of junction leakage currents 2 sample tested parameters
ald1107/ald1117 advanced linear devices 3 of 11 typical performance characterisitcs output characteristics drain source voltage (v) drain source current (ma) -10 -7.5 -5.0 -2.5 0 v bs = 0v t a = 25 c -10v -8v -6v -4v -2v 0-8 -2 -6 -4 -10 -12 v gs = -12v low voltage output characteristics drain source voltage (mv) drain source current ( a) -320 -160 0 160 320 -500 500 250 0 -250 -4v v gs = -12v -6v v bs = 0v t a = 25 c -2v transfer characteristic with substrate bias gate source voltage (v) 0 -0.8 -1.6 -2.4 -3.2 -4.0 -20 -15 -10 -5 0 drain source current ( a) v bs = 0v 4v 6v 8v 10v 12v v gs = v ds t a = 25 c 2v -12 forward transconductance vs. drain source voltage drain source voltage (v) 0-8 -2 -6 -4 -10 forward transconductance (mmho) 1.0 0.5 0.2 0.1 0.05 0.02 0.01 v bs = 0v f = 1khz i ds = -5ma t a = +125 c t a = +25 c i ds = -1ma gate source voltage (v) drain source on resistance r ds (on) vs. gate source voltage drain source on resistance (k ) 100 10 1 0.1 -2 0 -4 -6 -8 -10 -12 v ds = 0.4v v bs = 0v t a = +125 c t a = +25 c off drain current vs. ambient temperature ambient temperature ( c) off drain source current (pa) -50 -25 +25 +50 +75 +125 +100 0 v ds = -12v v gs = v bs = 0v 1 10 100 1000
ald1107/ald1117 advanced linear devices 4 of 11 differential amplifier current source multiplication current source mirror current source with gate control typical applications i set r set q 3 v + = +5v i source q 1 , q 2 : n - channel mosfet q 3 , q 4 : p - channel mosfet i source = i set = v + -vt r set = 4 r set ~ q 1 q 2 v + = +5v q 4 1/2 ald1106 or ald1116 1/2 ald1107 or ald1117 v + pmos pair q 4 v in - nmos pair q 2 q 1 v in + current source q 3 q 1 , q 2 : n - channel mosfet q 3 , q 4 : p - channel mosfet v out 1/2 ald1106 or ald1116 1/2 ald1107 or ald1117 q set, q 1 ..q n : ald1106 or ald1116 n - channel mosfet i set v + = +5v i source = i set x n r set q 2 q 3 q set q 1 q n v + = +5v q 4 i source r set q 1 q 3 i set on off digital logic control of current source q 1 : n - channel mosfet q 3, q 4 : p - channel mosfet 1/2 ald1107 or ald1117 1/4 ald1106 or 1/2 ald1116
ald1107/ald1117 advanced linear devices 5 of 11 cascode current sources basic current sources p- channel current source n- channel current source i source v + = +5v r set i set 1 2 3 q 1 5 6 8 q 2 7 i source = i set = v + - vt r set = v + - 1.0 r set q 1, q 2 : n - channel mosfet ~ = 4 r set ~ 1/2 ald1106 or ald1116 v + = +5v 2 3 5 6 7 8 q 4 i source q 3 r set i set q 3 , q 4 : p - channel mosfet 1/2 ald1107 or ald1117 i set v + = +5v q 2 i source r set q 3 q 1 q 1 , q 2 , q 3 , q 4 : n - channel mosfet (ald1101 or ald1103) q 4 ald1106 i set v + = +5v q 1 q 3 q 2 q 4 i source q1, q2, q3, q4: p - channel mosfet (ald1102 or ald1103) i source = i set = v + - 2vt r set = 3 r set ~ r set ald1107 typical applications (cont.)
ald1107/ald1117 advanced linear devices 6 of 11 8 pin plastic soic package soic-8 package drawing millimeters inches min max min max dim a a 1 b c d-8 e e h l s 1.75 0.25 0.45 0.25 5.00 4.05 6.30 0.937 8 0.50 0.053 0.004 0.014 0.007 0.185 0.140 0.224 0.024 0 0.010 0.069 0.010 0.018 0.010 0.196 0.160 0.248 0.037 8 0.020 1.27 bsc 0.050 bsc 1.35 0.10 0.35 0.18 4.69 3.50 5.70 0.60 0 0.25 l c h s (45 ) e a a 1 b d s (45 ) e
ald1107/ald1117 advanced linear devices 7 of 11 8 pin plastic dip package pdip-8 package drawing b 1 s b e e 1 d e a 2 a 1 a l c e 1 millimeters inches min max min max dim a a 1 a 2 b b 1 c d-8 e e 1 e e 1 l s-8 3.81 0.38 1.27 0.89 0.38 0.20 9.40 5.59 7.62 2.29 7.37 2.79 1.02 0 5.08 1.27 2.03 1.65 0.51 0.30 11.68 7.11 8.26 2.79 7.87 3.81 2.03 15 0.105 0.015 0.050 0.035 0.015 0.008 0.370 0.220 0.300 0.090 0.290 0.110 0.040 0 0.200 0.050 0.080 0.065 0.020 0.012 0.460 0.280 0.325 0.110 0.310 0.150 0.080 15
ald1107/ald1117 advanced linear devices 8 of 11 8 pin cerdip package cerdip-8 package drawing a a 1 b b 1 c d-8 e e 1 e e 1 l l 1 l 2 s 3.55 1.27 0.97 0.36 0.20 -- 5.59 7.73 3.81 3.18 0.38 -- 0 5.08 2.16 1.65 0.58 0.38 10.29 7.87 8.26 5.08 -- 1.78 2.49 15 millimeters inches min max min max dim 0.140 0.050 0.038 0.014 0.008 -- 0.220 0.290 0.150 0.125 0.015 -- 0 0.200 0.085 0.065 0.023 0.015 0.405 0.310 0.325 0.200 -- 0.070 0.098 15 2.54 bsc 7.62 bsc 0.100 bsc 0.300 bsc e e 1 c e 1 s b l d b 1 e a l 2 a 1 l 1
ald1107/ald1117 advanced linear devices 9 of 11 millimeters inches min max min max dim a a 1 b c d-14 e e h l s 1.75 0.25 0.45 0.25 8.75 4.05 6.30 0.937 8 0.50 0.053 0.004 0.014 0.007 0.336 0.140 0.224 0.024 0 0.010 0.069 0.010 0.018 0.010 0.345 0.160 0.248 0.037 8 0.020 1.27 bsc 0.050 bsc 1.35 0.10 0.35 0.18 8.55 3.50 5.70 0.60 0 0.25 14 pin plastic soic package soic-14 package drawing e d e a a 1 b s (45 ) l c h s (45 )
ald1107/ald1117 advanced linear devices 10 of 11 14 pin plastic dip package pdip-14 package drawing b 1 d s b e a 2 a 1 a l e e 1 c e 1 millimeters inches min max min max dim a a 1 a 2 b b 1 c d-14 e e 1 e e 1 l s-14 3.81 0.38 1.27 0.89 0.38 0.20 17.27 5.59 7.62 2.29 7.37 2.79 1.02 0 5.08 1.27 2.03 1.65 0.51 0.30 19.30 7.11 8.26 2.79 7.87 3.81 2.03 15 0.105 0.015 0.050 0.035 0.015 0.008 0.680 0.220 0.300 0.090 0.290 0.110 0.040 0 0.200 0.050 0.080 0.065 0.020 0.012 0.760 0.280 0.325 0.110 0.310 0.150 0.080 15
ald1107/ald1117 advanced linear devices 11 of 11 e e 1 c e 1 d s b 1 e b l a l 2 a 1 l 1 a a 1 b b 1 c d-14 e e 1 e e 1 l l 1 l 2 s 3.55 1.27 0.97 0.36 0.20 -- 5.59 7.73 3.81 3.18 0.38 -- 0 5.08 2.16 1.65 0.58 0.38 19.94 7.87 8.26 5.08 -- 1.78 2.49 15 millimeters inches min max min max dim 0.140 0.050 0.038 0.014 0.008 -- 0.220 0.290 0.150 0.125 0.015 -- 0 0.200 0.085 0.065 0.023 0.015 0.785 0.310 0.325 0.200 -- 0.070 0.098 15 2.54 bsc 7.62 bsc 0.100 bsc 0.300 bsc 14 pin cerdip package cerdip-14 package drawing

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