TSDF72830YS document number 85176 rev. 1.1, 02-may-05 vishay semiconductors www.vishay.com 1 vy cw wn7 4 5 6 3 2 1 18981 electrostatic sensitive device. observe precautions for handling dual - mosmic ? - two agc amplifiers for tv-tuner prestage with integrated band switch for one-line switching comments mosmic - mos m onolithic i ntegrated c ircuit description the dual-mosmic ? TSDF72830YS, assembled in the well-known sot-363 plastic package, is a combi- nation of two different mosmic ? amplifiers with com- mon source and common gate 2 leads and an integrated switch. one of the mosmic stages is opti- mized for use in vhf applications, especially regard- ing cross modulation performance and noise figure at lower vhf frequencies, whereas the other stage is optimized for use in uhf applications regarding gain and noise figure performance at higher frequencies of uhf range. the integrated switch is operated by the gate 1 bias of the uhf amplifier on pin 3. all of the gates are protected against excessive input voltage surges by integrated antiserial diodes between them- selves and source. drain output pin of each stage is opposite to corresponding gate 1 input pin what is called sot-363l pin configuration with vishay. features ? two differently opti mized amplifiers in a single package. one of them has a fully internal self-b iasing network on chip and the other has a partly integrated bias for easy gate 1 switch-off with pnp switching transis- tors inside pll -ic ? internal switch for saving lines on pcb layout as well as external components ? integrated gate protection diodes ? low noise figure, high gain ? typical forward transadmittance of 31 ms resp. 28 ms ? superior cross modulation at gain reduction ? high agc-range with soft slope ? main agc control range from 3 v to 0.5 v ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications low noise gain controlled vhf and uhf input stages with 5 v supply voltage, such as in digital and analog tv tuners and in other multimedia and communica- tions equipment. typical application mechanical data case: sot-363l plastic case weight: approx. 6.0 mg v - vishay y - year, is variable for digit from 0 to 9 (e.g. 3 = 2003, 4 = 2004) cw - calendar week, is variable for number from 01 to 52 number of calendar week is always indicating place of pin 1 pinning: 1 = gate 1 (vhf amplifier), 2 = gate 2 (common) 3 = gate 1 (uhf amplifier), 4 = drain (uhf amplifier), 5 = source (common), 6 = drain (vhf amplifier) amp2 amp1 g1 g1 3 1 agc v gg = 5 v: uhf amp is on; vhf amp is off v gg v gg = 0 v: uhf amp is off; vhf amp is on uhf in vhf in c c d 4 g2 (common) 2 s (common) c rfc uhf +5 v d 6 c rfc 18982 +5 v c 5 rg1 out vhf out (0 = shorted to ground or open) e3
www.vishay.com 2 document number 85176 rev. 1.1, 02-may-05 TSDF72830YS vishay semiconductors parts table absolute maximum ratings t amb = 25 c, unless otherwise specified amplifier 1 following data are valid for operating amplifier 1 (pin 1, 6, 2, 5) which is optimized for vhf applications amplifier 2 following data are valid for operating amplifier 2 (pin 3, 4, 2, 5) which is optimized for uhf applications maximum thermal resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m cu part marking package TSDF72830YS wn7 sot-363l parameter test condition symbol value unit drain - source voltage v ds 8v drain current i d 30 ma gate 1/gate 2 - source peak current i g1/g2sm 10 ma gate 1/gate 2 - source voltage + v g1 v g2sm 6v gate 1 - source voltage - v g1sm 1.5 v total power dissipation t amb 60 c p tot 200 mw channel temperature t ch 150 c storage temperature range t stg - 55 to + 150 c parameter test condition symbol value unit drain - source voltage v ds 8v drain current i d 25 ma gate 1/gate 2 - source peak current i g1/g2sm 10 ma gate 1/gate 2 - source voltage + v g1 / v g2sm 6v gate 1 - source voltage - v g1sm 1.5 v total power dissipation t amb 60 c p tot 200 mw channel temperature t ch 150 c storage temperature range t stg - 55 to + 150 c parameter test condition symbol value unit channel ambient 1) r thcha 450 k/w
TSDF72830YS document number 85176 rev. 1.1, 02-may-05 vishay semiconductors www.vishay.com 3 electrical dc characteristics t amb = 25 c, unless otherwise specified amplifier 1 following data are valid for operating amplifier 1 (pin 1, 6, 2, 5) which is optimized for vhf applications amplifier 2 following data are valid for operating amplifier 2 (pin 3, 4, 2, 5) which is optimized for uhf applications parameter test condition symbol min ty p. max unit gate 1 - source breakdown voltage + i g1s = 10 ma, v g2s = v ds = 0 + v (br)g1ss 710v gate 2 - source breakdown voltage i g2s = 10 ma, v g1s = v ds = 0 v (br)g2ss 710v gate 1 - source leakage current + v g1s = 5 v, v g2s = v ds = 0 + i g1ss 50 a gate 2 - source leakage current v g2s = 5 v, v g1s = v ds = 0 i g2ss 20 na drain - source operating current v ds = v rg1 = 5 v, v g2s = 4 v, gate 1 = nc i dsp 81317ma gate 2 - source cut-off voltage v ds = v rg1 = 5 v, gate 1 = nc, i d = 20 a v g2s(off) 0.3 1.2 v parameter test condition symbol min ty p. max unit drain - source breakdown voltage i d = 10 a, v g2s = v g1s = 0 v (br)dss 15 v gate 1 - source breakdown voltage + i g1s = 10 ma, v g2s = v ds = 0 + v (br)g1ss 710v i g2s = 10 ma, v g1s = v ds = 0 v (br)g2ss 710v gate 1 - source leakage current + v g1s = 5 v, v g2s = v ds = 0 + i g1ss 20 na gate 2 - source leakage current v g2s = 5 v, v g1s = v ds = 0 i g2ss 20 na drain - source operating current v ds = v rg1 = 5 v, v g2s = 4 v, r g1 = 100 k i dso 81217ma gate 1 - source cut-off voltage v ds = 5 v, v g2s = 4, i d = 20 av g1s(off) 0.3 1.0 v gate 2 - source cut-off voltage v ds = v rg1 = 5 v, r g1 =100 k , i d = 20 a v g2s(off) 0.3 1.2 v
www.vishay.com 4 document number 85176 rev. 1.1, 02-may-05 TSDF72830YS vishay semiconductors electrical ac characteristics t amb = 25 c, unless otherwise specified amplifier 1 v ds = v rg1 = 5 v, v g2s = 4 v, gate 1 = nc, i d = i dsp, f = 1 mhz, t amb = 25 c, unless otherwise specified following data are valid for operating am plifier 1 (pin 1, 6, 2, 5) which is optimized for vhf applications parameter test condition symbol min ty p. max unit forward transadmittance |y 21s |232833ms gate 1 input capacitance c issg1 2.2 2.7 pf feedback capacitance c rss 20 ff output capacitance c oss 1.0 pf power gain g s = 2 ms, b s = b sopt , g l = 0.5 ms, b l = b lopt , f = 200 mhz g ps 32 db g s = 2 ms, b s = b sopt , g l = 1 ms, b l = b lopt , f = 400 mhz g ps 28 db g s = 3.3 ms, b s = b sopt , g l = 1 ms, b l = b lopt , f = 800 mhz g ps 22 db agc range v ds = 5 v, v g2s = 0.5 to 4 v, f = 200 mhz g ps 50 db noise figure g s = g l = 20 ms, b s = b l = 0, f = 50 mhz f4.06.0db g s = 2 ms, g l = 1 ms, b s = b sopt , f = 400 mhz f1.01.6db g s = 3.3 ms, g l = 1 ms, b s = b sopt , f = 800 mhz f1.52.3db cross modulation input level for k = 1 % @ 0 db agc f w = 50 mhz, f unw = 60 mhz x mod 90 db v input level for k = 1 % @ 40 db agc f w = 50 mhz, f unw = 60 mhz x mod 105 db v
TSDF72830YS document number 85176 rev. 1.1, 02-may-05 vishay semiconductors www.vishay.com 5 amplifier 2 v ds = v rg1 = 5 v, v g2s = 4 v, r g1 = 100 k , i d = i dso, f = 1 mhz, t amb = 25 c, unless otherwise specified following data are valid for operating amplifier 2 (pin 3, 4, 2, 5) which is optimized for uhf applications remark on improving intermodulation behavior: by setting r g1 smaller than 100 k , typical value of i dso will raise and improved interm odulation behavior will be performed. parameter test condition symbol min ty p. max unit forward transadmittance |y 21s |27 31 35 ms gate 1 input capacitance c issg1 1.7 2.1 pf feedback capacitance c rss 20 ff output capacitance c oss 0.9 pf power gain g s = 2 ms, b s = b sopt , g l = 0.5 ms, b l = b lopt , f = 200 mhz g ps 33 db g s = 3.3 ms, b s = b sopt , g l = 1 ms, b l = b lopt , f = 400 mhz g ps 30 db g s = 3.3 ms, b s = b sopt , g l = 1 ms, b l = b lopt , f = 800 mhz g ps 25 db agc range v ds = 5 v, v g2s = 0.5 to 4 v, f = 800 mhz g ps 40 50 db noise figure g s = g l = 20 ms, b s = b l = 0, f = 50 mhz f5.07.0db g s = 2 ms, g l = 0.5 ms, b s = b sopt , f = 400 mhz f1.01.5db g s = 3.3 ms, g l = 1 ms, b s = b sopt , f = 800 mhz f1.32.0db cross modulation input level for k = 1 % @ 0 db agc f w = 50 mhz, f unw = 60 mhz x mod 90 db v input level for k = 1 % @ 40 db agc f w = 50 mhz, f unw = 60 mhz x mod 100 105 db v
www.vishay.com 6 document number 85176 rev. 1.1, 02-may-05 TSDF72830YS vishay semiconductors package dimensions in mm (inches) 1.60 (0.063) 1.30 (0.052) ref. 0.65 (0.026) ref. 0.35 (0.014) 0.90 (0.035) 142 8 0 0. 8 0 (0.031) 1.00 (0.039) 10 0.10 (0.004) 0.10 (0.004) 0.25 (0.010) 1. 8 0 (0.071) 2.20 (0.0 8 7) 2.00 (0.079) 2.20 (0.0 8 7) 1.15 (0.045) 1.35 (0.053) 0.20 (0.009) 0.30 (0.012) 0.65 (0.026) 1.3 (0.052) i s o m e t h o d e mountin g pad layout
TSDF72830YS document number 85176 rev. 1.1, 02-may-05 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health an d safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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