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d2706 ms im b8-5775 no.8798-1/11 LB11980H overview LB11980H is a 3-phase brushless motor driver optimal for driving the vcr capstan motors. features ? 3-phase full-wave current-linear drive system. ? torque ripple correction circuit bu ilt-in.(correction factor variable) ? current limiter circuit built in. ? output stage upper/lower over-saturation prevention circuit built in. (no external capacitor required) ? fg amplifier built in. ? thermal shutdown circuit built in. absolute maximum ratings at ta = 25 c parameter symbol conditions ratings unit v cc max 7 v maximum supply voltage vs max 25 v maximum output current i o max 1.3 a mounted on a specified board * 1.81 w allowable power dissipation pd max independent ic 0.77 w operating temperature topr -20 to +75 c storage temperature tstg -55 to +150 c * mounted on a specified board: 114mm 71.1mm 1.6mm, glass epoxy board allowable operating range at ta = 25 c parameter symbol conditions ratings unit vs 5 to 24 v supply voltage v cc 4.5 to 5.5 v hall input amplitude vhall between hall inputs 30 to 80 mvo-p gsense input range vgsense with respect to the control system ground -0.20 to +0.20 v ordering number : en8798 monolithic digital ic for vcr capstan three-phase brushless motor driver any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before using any sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated val ues (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein.
LB11980H no.8798-2/11 electrical characteristics at ta = 25 c, v cc = 5v, vs = 15v ratings parameter symbol conditions min typ max unit v cc supply current i cc r l = , vctl = 0, vlim = 0v (quiescent) 12 18 ma output v o sat1 i o = 500ma, rf = 0.5 ? , sink+source vctl = vlim = 5v (with saturation prevention) 2.1 2.6 v output saturation voltage v o sat2 i o = 1.0a, rf = 0.5 ? , sink+source vctl = vlim = 5v (with saturation prevention) 2.6 3.5 v output leakage current i o leak 1.0 ma fr fr pin input threshold voltage vfsr 1.0 1.25 2 v fr pin input input bias current ib (fsr) vfr = 3v 100 150 200 a control ctl pin input input bias current ib (ctl) vctl = 5v 1.5 3 a ctl pin input motor current imctl vctl = 0v 5 ma ctl pin control start voltage vctl (st) rf = 0.5 ? , vlim = 5v, i o 10ma hall input logic fixed (u, v, w = h, h, l) 2.25 2.50 2.75 v ctl pin control gm gm (ctl) rf = 0.5 ? , ? i o = 200ma hall input logic fixed (u, v, w = h, h, l) 0.86 1.06 1.26 a/v current limit lim pin input current ilim vlim = 3v 1.5 3 a lim pin motor current imlim vlim = 0v 5 ma lim current limit offset vo ltage voff (lim) rf = 0.5 ? , vctl = 5v, i o 10ma hall input logic fixed (u, v, w = h, h, l) 1.0 1.25 1.5 v lim pin control gm gm (lim) rf = 0.5 ? , vctl = 5v hall input logic fixed (u, v, w = h, h, l) 0.59 0.71 0.83 a/v hall amplifier hall amplifier input offset voltage voff (hall) -6 +6 mv hall amplifier input bias curr ent ib (hall) 1.0 3.0 a hall amplifier common-mode input voltage vcm (hall) 1.3 3.3 v trc torque ripple correction ratio trc for the high and low peaks in the rf waveform when i o = 200ma (rf = 0.5 ? , adj-open) note.2 13 % adj pin voltage vadj 2.37 2.50 2.63 v fg amplifier fg amplifier input offset voltage voff (fg) -8 +8 mv fg amplifier input bias current ib (fg) -100 na fg amplifier output saturation voltage v o sat (fg) sink side; with internal pull-up resistance load 0.5 0.6 v fg amplifier voltage gain vg (fg) for open loop at f = 10khz 41.5 44.5 47.5 db fg amplifier common-mode input voltage vcm (fg) 0.5 4.0 v schmitt amplifier duty ratio duty under specified conditions (rf = 39k ? ) note 3 49.0 50 51.0 % upper side output saturation voltage vsatu (sh) i o = -20 a 4.8 v lower side output saturation voltage vsatd (sh) i o = 100 a 0.2 v hysteresis width vhys 32 46 60 mv fgs output pin pull-up resistance rfgout 4.7 k ? saturation saturation prevention circuit lower set voltage v o sat (det) voltage between each out and rf with i o = 10ma, rf = 0.5 ? , vctl = vlim = 5v 0.175 0.25 0.325 v tsd tsd operating temperature t-tsd (design target) note.1 180 c note 1. no measurements are made on th e parameters with note (design target).
LB11980H no.8798-3/11 note 2. the torque ripple compensation ratio is determined as follows from the rf voltage waveform. note 3. apply the sine wave of 1khz, 20mvp-p under conditions with a sample circuit installed externally as shown above. package dimensions unit : mm (typ) 3233b sanyo : hsop28h(375mil) 15.2 (6.2) 0.3 7.9 (4.9) 10.5 2.7 0.8 2.0 (0.8) 1 14 15 28 0.65 0.25 2.45max 0.1 (2.25) heat spreader i ii iii iv v vi each hall logic setting gnd level vp vb correnction ratio = 2* (vp - vb) vp + vb 100* (%) 02025 -20 40 60 100 80 75 0 0.4 1.2 0.8 2.0 1.6 0.2 1.0 0.6 1.8 1.4 ilb01492 1.81 mounted on a specified board (114mm 71.1mm 1.6mm glass epoxy) 0.77 1.09 0.46 independent ic ambient temperature, ta - c pd max - ta allowable power dissipation, pd max - w
LB11980H no.8798-4/11 pin assignment LB11980H top view 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 fc lim ctl fgs fg out fg in + fg in - w out nc nc rf gsense fr gnd frame gnd hu+ hu- hv+ hv- hw+ hw- v cc frame gnd vs a dj rf nc nc u out v out
LB11980H no.8798-5/11 block diagram v w u tsd logarithmic inverse transformation output stage vs u-out u v w gm gm v-out w-out rf (pwr) rf (sense) a dj gsense fg in - fg in + fg out bandgap 1.25v v cc gnd fr lim ctl limref 12 fc u in + u in - v in + v in - w in + w in - fgs combined output logarithmic compression block hall input combination block ( linear matrix) upper saturation prevention control reference voltage drive distribution circuit & lower saturation prevention control differential distribution and torque ripple correction block feedback amplifier control amplifier approx.1/2v cc forward/ reverse selection fg amplifier
LB11980H no.8798-6/11 truth table and control function hall input source sink u v w fr v w h 1 w v h h l l u w h 2 w u h l l l u v h 3 v u h l h l w v h 4 v w l l h l w u h 5 u w l h h l v u h 6 u v l h l l note: ?h? in the fr column represents a voltage of 2.75 v or more. ?l? represents a voltage of 2.25v or less. (at v cc = 5v) note: ?h? under the hall input columns re presents a state in which ?+? has a potential which is higher by 0.01v or more than that of the ?-? phase inputs. conversely ?l? represents a state in which ?+? has a potential which is lower by 0.01v or more than that of the ?-? phase inputs. note: since a 180 energized system is used as a drive system, ot her phases than the sink and source are not off. [control function & current limiter function] 1 1out 2 3 4 5 0 control characteristics vlim = 5v gm = 1.06a/vtyp 2.50vtyp vctl 1 1out 23 4 0 current limiter characteristics vctl = 5v slope = 0.71a/vtyp vlim 1.25vtyp
LB11980H no.8798-7/11 pin functions pin name pin no functions fr 6 forward/reverse select pin. this pin voltage determines forward/reverse. (vth = 1.25v typ at v cc = 5v) gnd 7 gnd for others than the output transistor. minimum potential of output transistor is at rf pin. fg in (-) 8 input pin for the fg amplifier to be used with inverted input. a feedback resistor is connected between this pin and fg out. fg in (+) 9 non-inverted input pin for the fg am plifier to be used as differential input. no bias is applied internally. fg-out 10 fg amplifier output pin. resistive load provided internally. ctl 12 speed control pin. control is performed by means of const ant current drive which is appli ed by current feedback from rf. gm = 1.06a/vtyp at rf = 0.5 ? lim 13 current limiter function control pin. this pin voltage is capable of vary ing the output current linearly. slope = 0.71a/vtyp at rf = 0.5 ? fc 14 speed control loop?s frequency characteristics correction pin. u in +, u in - v in +, v in - w in +, w in - 15, 16 17, 18 19, 20 u-phase hall device input pin; logic ?h? presents in+>in- v-phase hall device input pin; logic ?h? presents in+>in- w-phase hall device input pin; logic ?h? presents in+>in- v cc 21 power supply pin for supplying power to all circuits expect outp ut section in ic; this voltage must be stabilized so as to eliminate ripple and noise. vs 22 power supply pin for supplying power to output section in ic. adj 23 pin to be used to adjust the to rque ripple correction factor externally. when adjusting the correction factor, apply voltage externally to the adj pin through a low impedance. increasing the applied voltage decreases the correction fact or; lowering the applied voltage increases the correction factor. the rate of change, when left open, ra nges approximately from 0 to 2 times. (approximately v cc /2 is set internally and the input impedance is approximately 5k ? .) rf (pwr) rf (sns) 24 4 output current detection pins. current feedback is provided to the control blocks by connecting rf between the pins and gnd. the operation of the lower over-sat uration prevention circuit and torque ripple correction circuit depends on the pin voltage. in particular, since the oversaturation prevention level is set by the pin voltage, decreasing the rf value extermely may cause the lower over-saturation prevention to work less efficiently in the large current region. the pwr pin and sense pin must be connected. fgs 11 fg schmidt amp output pin, that is pulled up with 4.7k ? . u out v out w out 27 28 1 u-phase output pin. v-phase output pin. (built-in spark killer diode) w-phase output pin. gsense 5 gnd sensing pin. by connecting this pin to gnd in the vicinity of the rf resi stor side of the rf included motor gnd wiring, the influence that the gnd common impedance exerts on rf can be excluded. (must not be left open.)
LB11980H no.8798-8/11 each input/output equivalent circuit pin no. pin name input/output equivalent circuit 15 16 17 18 19 20 u in (+) u in (-) v in (+) v in (-) w in (+) w in (-) each (+) input 100 a 200 ? ? each (-) input 27 28 1 22 24 4 u out v out w out vs rf (power) rf (sense) 200 ? a lower oversaturation prevention circuit block 10 a v cc 200 ? ? rf (power) 12 13 ctl lim v cc 200 ? ? 5k ? v cc 100 a ctl 200 ? ? v cc 200 a max 6 23 fr adj 10k ? v cc 200 a 10k ? 6k ? 500 ? 6k ? ? 10k ? 20 a v cc v cc adj 1.25v 200 ? ? continued on next page.
LB11980H no.8798-9/11 continued from preceding page. pin no. pin name input/output equivalent circuit 8 9 fg in (-) fg in (+) 5 a 300 ? 2k ? v cc 300 ? ? 10k ? 11 fgs 4.7k ? v cc 300 ? ? v cc v cc
LB11980H no.8798-10/11 sample application circuit note) the constant shown in this example is only fo r reference and does not gu arantee the characteristics. connect a capacitor between power supply an d gnd and between hall inputs as required. 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 hsop28h top view fc lim ctl fgs fg out fg in + fg in - w out nc nc rf gsense fr gnd frame gnd hu+ hu- hv+ hv- hw+ hw- v cc frame gnd vs adj rf nc nc u out v out mr v cc 39k ? 1 f 2.5v 5v 15v hall element 0.5 ? 0.1 f 0.1 f 0.1 f 0.1 f fgs pulse output torque instruction voltage supply pin current limiter setting voltage supply pin
LB11980H no.8798-11/11 ps this catalog provides information as of december, 2006. specifications and information herein are subject to change without notice. specifications of any and all sanyo semiconductor pr oducts described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify s ymptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high- quality high-reliability products. however, any and all semiconductor products fail with some probabi lity. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property . when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor produc ts (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording , or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circui t parameters) herein is for example only; it is not guaranteed for volume production. sanyo semicondu ctor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

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