vom617a www.vishay.com vishay semiconductors rev. 1.3, 11-dec-12 1 document number: 83446 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 low input current, phototransistor output, sop-4, mini-flat package description the 110 c rated vom617a has a gaas infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package. it features a high current transfer ratio, low coupling capacitance, and high isolation voltage. these coupling devices are design ed for signal transmission between two electrically separated circuits. agency approvals (all parts are certified under base model vom617a) ? ul1577, file no. e52744 ? cul tested to csa 22.2 bulletin 5a ? din en 60747-5-5 (vde 0884-5), available with option 1 ? fimko en 60065 and en 60950-1 ? cqc gb8898-2011, gb4943.1-2001 features ? operating temperature from - 55 c to + 110 c ? sop-4 mini-flat package ? isolation test voltage, 3750 v rms ? low saturation voltage ? fast switching times ? low coupling capacitance ? end-stackable, 0.100" (2.54 mm) spacing ? ctr range 40 % to 600 %, i f = 5 ma ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ?plcs ? telecommunication ? lighting control system ? solar inverters ? ac drives e c a c 1 2 4 3 i179089 ordering information vom6 1 7a - #x0 0 1 t part number ctr bin vde option tape and reel agency certified/ package ctr (%) 5 ma ul, cul, fimko, cqc 50 to 600 63 to 125 100 to 200 160 to 320 250 to 500 80 to 160 130 to 260 200 to 400 sop-4, mini-flat vom617at vom617a-2t vom617a-3t vom617a-4t vom617a-6t vom617a-7t vom617a-8t vom617a-9t vde, ul, cul, fimko, cqc 50 to 600 63 to 125 100 to 200 160 to 320 250 to 500 80 to 160 130 to 260 200 to 400 sop-4, mini-flat vom617a- x001t vom617a- 2x001t vom617a- 3x001t vom617a- 4x001t vom617a- 6x001t vom617a- 7x001t vom617a- 8x001t vom617a- 9x001t s op-4 5
vom617a www.vishay.com vishay semiconductors rev. 1.3, 11-dec-12 2 document number: 83446 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? stresses in excess of the abso lute maximum ratings can cause permanent damage to the device. functional operation of the devic e is not implied at these or any other conditions in excess of those give n in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (1) see assembly instructions for surface mounted devices ( www.vishay.com/doc?80054 ). fig. 1 - total power dissipation vs. ambient temperature absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit input dc forward current i f 60 ma reverse voltage v r 6v power dissipation p diss 70 mw surge forward current t p 10 s i fsm 2.5 a output collector emitter voltage v ceo 80 v emitter collector voltage v eco 7v collector current i c 50 ma t p 1 ms 100 ma power dissipation p diss 150 mw coupler isolation test voltage between emitter and detector t = 1 min v iso 3750 v rms total power dissipation p tot 170 mw operating temperature range t amb - 55 to + 110 c storage temperature range t stg - 55 to + 150 c junction temperature t j 125 c soldering temperature (1) t sld 260 c 0 50 100 150 200 0 25 50 75 100 125 p tot - total power di ss ipation (mw) t amb - ambient temperature ( c) coupled device phototran s i s tor ir-diode
vom617a www.vishay.com vishay semiconductors rev. 1.3, 11-dec-12 3 document number: 83446 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? minimum and maximum values are testing requirements. typical valu es are characteristics of the device and are the result of en gineering evaluation. typical values are for information only and are not part of the testing requirements. electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit input forward voltage i f = 5 ma v f 1.1 1.6 v reverse current v r = 6 v i r 0.01 10 a capacitance v r = 0 v, f = 1 mhz c j 9pf output collector emitter leakage current v ce = 20 v i ceo 0.3 100 na collector emitter breakdown voltage i c = 100 a bv ceo 80 v emitter collector breakdown voltage i e = 10 a bv eco 7v collector emitter capacitance v ce = 5 v, f = 1 mhz c ce 2.8 pf coupler coupling capacitance f = 1 mhz c io 0.3 pf collector emitter sa turation voltage i f = 10 ma, i c = 2.5 ma v cesat 0.12 0.4 v cut-off frequency i f = 10 ma, v cc = 5 v, r l = 100 f ctr 110 khz current transfer ratio (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit i c /i f i f = 5 ma, v ce = 5 v vom617a ctr 50 600 % vom617a-2 ctr 63 125 % vom617a-3 ctr 100 200 % vom617a-4 ctr 160 320 % vom617a-6 ctr 250 500 % vom617a-7 ctr 80 160 % vom617a-8 ctr 130 260 % vom617a-9 ctr 200 400 % switching characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit non-saturated rise and fall time i c = 2 ma, v cc = 5 v, r l = 100 t r 3s fall time t f 3s turn-on time t on 6s turn-off time t off 4s saturated rise and fall time i f = 1.6 ma, v cc = 5 v, r l = 1.9 k t r 7s fall time t f 12 s turn-on time t on 9s turn-off time t off 15 s
vom617a www.vishay.com vishay semiconductors rev. 1.3, 11-dec-12 4 document number: 83446 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 2 - test circuit fig. 3 - test circui t and waveforms note ? as per din en 60747-5-5 (vde 0884), 7.4.3.8.2, this optocoupler is suitable for safe electrical insulation only within the safety ratings. compliance with the safety ra tings shall be ensured by means of protective circuits. input v out v cc = 5 v r l 10 % 90 % input pulse output pulse t r t on t f t off safety and insulation ratings parameter symbol value unit maximum safety ratings output safety power p so 300 mw input safety current i si 200 mw safety temperature t s 150 c comparative tracking index cti 175 insulation rated parameters maximum withstanding isolation voltage v iso 3750 v rms maximum transient isolation voltage v iotm 6000 v peak maximum repetitive pe ak isolation voltage v iorm 565 v peak insulation resistance t amb = 25 c, v dc = 500 v r io 10 12 isolation resistance t amb = 100 c, v dc = 500 v r io 10 11 climatic classification (according to iec 68 part 1) 55/110/21 environment (pollution degree in accordance to din vde 0109) 2 internal creepage 5 mm external creepage 5 mm clearance 5 mm insulation thickness 0.4 mm
vom617a www.vishay.com vishay semiconductors rev. 1.3, 11-dec-12 5 document number: 83446 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 4 - forward voltage vs. forward current fig. 5 - collector current vs. collector emitter voltage (ns) fig. 6 - leakage current vs. ambient temperature fig. 7 - collector current vs. collector emitter voltage (sat) fig. 8 - normalized current transfer ratio (non-sat) vs. ambient temperature fig. 9 - normalized current transfer ratio (sat) vs. ambient temperature 0.1 1 10 100 0.6 0.8 1.0 1.2 1.4 1.6 i f - forward current (ma) v f - forward voltage (v) t amb = 110 c t amb = 75 c t amb = 25 c t amb = 0 c t amb = - 55 c 0 5 10 15 20 25 30 35 40 45 50 55 0 1 2 3 4 5 6 7 8 9 10 i c - collector current (ma) v ce - collector emitter voltage (non- s at) (v) i f = 30 ma i f = 35 ma i f = 1 ma i f = 20 ma i f = 15 ma i f = 10 ma i f = 5 ma i f = 25 ma 0.001 0.01 0.1 1 10 100 1000 10 000 - 60 - 40 - 20 0 20 40 60 80 120 i ce0 - leakage current (na) t amb - ambient temperature ( c) i f = 0 ma v ce = 40 v v ce = 24 v v ce = 12 v 100 0 2 4 6 8 10 12 14 00.10.20.30.4 i c - collector current (ma) v ce - collector emitter voltage ( s at) (v) i f = 1 ma i f = 10 ma i f = 5 ma i f = 2 ma 0 0.2 0.4 0.6 0.8 1.0 1.2 - 60 - 40 - 20 0 20 40 60 80 100 120 n ctr - normalized ctr (non- s aturated) t amb - ambient temperature ( c) normalized to ctr value: i f = 5 ma, v ce = 5 v, t amb = 25 c i f = 5 ma 0 0.2 0.4 0.6 0.8 1.0 1.2 - 60 - 40 - 20 0 20 40 60 80 100 120 n ctr - normalized ctr ( s at) t amb - ambient temperature ( c) i f = 5 ma normalized to ctr value: i f = 5 ma, v ce = 5 v, t amb = 25 c
vom617a www.vishay.com vishay semiconductors rev. 1.3, 11-dec-12 6 document number: 83446 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 10 - collector emitter voltage vs. ambient temperature (saturated) fig. 11 - normalized ctr (ns) vs. forward current fig. 12 - normalized ctr (sat) vs. forward current fig. 13 - f ctr vs. phase angle fig. 14 - f ctr vs. collector current fig. 15 - switching time vs. load resistance 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 - 60 - 40 - 20 0 20 40 60 80 100 120 v ce s at - collector emitter voltage (v) t amb - ambient temperature ( c) i c = 1 ma i c = 2 ma i c = 5 ma i f = 10 ma 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 n ctr - normalized ctr (n s ) i f - forward current (ma) normalized to: i f = 5 a, v ce = 5 v, t amb = 25 c t amb = 0 c t amb = 100 c t amb = 75 c t amb = - 55 c t amb = 25 c 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 n ctr - normalized ctr ( s at) i f - forward current (ma) v ce = 0.4 v normalized to: i f = 5 ma, v ce = 5 v, t amb = 25 c t amb = 0 c t amb = 75 c t amb = - 55 c t amb = 25 c t amb = 100 c - 160 - 140 - 120 - 100 - 80 - 60 - 40 - 20 0 1 10 100 1000 pha s e angle (deg) f - cut-off fre q uency (khz) v ce = 5 v r l = 100 r l = 1000 s witching time ( s ) r l - load re s i s tance (k ) t off ( s ) t on ( s ) v ce = 5 v, i f = 2 ma
vom617a www.vishay.com vishay semiconductors rev. 1.3, 11-dec-12 7 document number: 83446 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters package marking (example of VOM617A-3X001T) notes ? only option 1 is reflected in the package marking with the characters x. ? tape and reel suffix (t) is not part of the package marking. tape and reel dimensions in millimeters fig. 16 - reel dimensio ns (3000 units per reel) fi g. 17 - tape dimensions 4.40 0.2 2.54 0.25 1 4 2 3 pin one id 3.85 0.3 2.00 0.2 0.10 0.1 0.40 0.1 0.8 6.5 2.54 1 0.40 0.1 7.00 + 0.2 - 0.7 5.30 0.3 0.2 0.05 i178048 617a3 v yww 25x 330 (13 " ) 100 17.1 12 0.3 4 0.1 5.5 0.1 2 0.1 1.75 0.1 1.5 0.1 8 0.1 0.3 0.05 2.45 0.1
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