? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m 500 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c22a i dm t c = 25 c, pulse width limited by t jm 66 a i ar t c = 25 c22a e ar t c = 25 c30mj e as t c = 25 c 750 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 10 p d t c = 25 c 350 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque 1.13/10 nm/lb.in. weight to-3p 5.5 g plus220 & plus220smd 4 g ds99351e(03/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.5 v i gss v gs = 30 v dc , v ds = 0 10 na i dss v ds = v dss 5 a v gs = 0 v t j = 125 c50 a r ds(on) v gs = 10 v, i d = 0.5 i d25 270 m pulse test, t 300 s, duty cycle d 2 % polarhv tm power mosfet n-channel enhancement mode avalanche rated features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density ixth 22n50p ixtq 22n50p ixtv 22n50p ixtv 22n50ps v dss = 500 v i d25 = 22 a r ds(on) 270 m g d s (tab) g = gate d = drain s = source tab = drain g s d plus220 (ixtv) g s plus220smd (ixtv...s) d (tab) d (tab) to-3p (ixtq) g d s to-247 (ixth) (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixth 22n50p ixtq 22n50p ixtv 22n50p ixtv 22n50ps symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 20 s c iss 2630 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 310 pf c rss 27 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 27 ns t d(off) r g = 10 (external) 75 ns t f 21 ns q g(on) 50 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 16 nc q gd 18 nc r thjc 0.35 k/w r thcs (to-247) 0.21 k/w r thcs (to-3p) 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 16 a i sm repetitive 55 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 22 a, -di/dt = 100 a/ s, v gs = 0 v 400 ns ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 to-247 (ixth) outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-3p (ixtq) outline
? 2006 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 45 50 55 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 5v 7v 6v fig. 3. output characteristics @ 125 o c 0 2 4 6 8 10 12 14 16 18 20 22 0246810121416 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 1. output characteristics @ 25 o c 0 2 4 6 8 10 12 14 16 18 20 22 01234567 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 22a i d = 11a v gs = 10v fig. 6. drain current vs. case temperature 0 4 8 12 16 20 24 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 0 5 10 15 20 25 30 35 40 45 50 55 i d - amperes r d s ( o n ) - normalized t j = 125 o c t j = 25 o c v gs = 10v ixth 22n50p ixtq 22n50p ixtv 22n50p ixtv 22n50ps
ixys reserves the right to change limits, test conditions, and dimensions. ixth 22n50p ixtq 22n50p ixtv 22n50p ixtv 22n50ps fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 q g - nanocoulombs v g s - volts v ds = 250v i d = 11a i g = 10ma fig. 7. input admittance 0 5 10 15 20 25 30 35 3.5 4 4.5 5 5.5 6 6.5 7 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 1 10 100 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds(on) limit 10ms 25s
? 2006 ixys all rights reserved fig. 13. maxim um transient therm al resistance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - o c / w ixth 22n50p ixtq 22n50p ixtv 22n50p ixtv 22n50ps plus220 (ixtv) outline plus220smd (ixtv_s) outline
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