f-48 01/99 NJ3600L process silicon junction field-effect transistor large capacitance detector pre-amplifier absolute maximum ratings at ta = 25?c gate current, ig 10 ma operating junction temperature, tj +150c storage temperature, ts C 65c to +175c device in this databook based on the NJ3600L process. datasheet if3601 if3602 at 25c free air temperature: NJ3600L process static electrical characteristics min typ max unit test conditions gate source breakdown voltage v (br)gss C 15 C 22 v i g = 1 a, v ds = ? v reverse gate leakage current i gss 100 1000 pa v gs = 10 v, v ds = ? v drain saturation current (pulsed) i dss 50 1000 ma v ds = 10 v, v gs = ? v gate source cutoff voltage v gs(off) C 0.5 C 3 v v ds = 10 v, i d = 1 na dynamic electrical characteristics drain source on resistance r ds(on) 14 i d = 1 ma, v gs = ? v f = 1 khz forward transconductance (pulsed) g fs 750 ms v ds = 10 v, v gs = ? v f = 1 khz input capacitance c iss 650 pf v ds = 10 v, v gs = ? v f = 1 khz feedback capacitance c rss 80 pf v ds = 10 v, v gs = ? v f = 1 khz equivalent noise voltage e n 0.35 nv/ hz v dg = 3v, i d = 5 ma f = 30 hz 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com g s-d s-d g d-s d-s s-d d-s die size = 0.074" x 0.074" all bond pads 3 0.004" sq. substrate is also gate. databook.fxp 1/13/99 2:09 pm page f-48
01/99 f-49 NJ3600L process silicon junction field-effect transistor 375 300 225 150 75 drain to source voltage in volts 02468 drain current as a function of v ds v gs = ?.2 v v gs = ?.9 v v gs = ?.6 v v gs = ?.3 v v gs = v v gs(off) = e1.25 v drain source cutoff voltage in volts drain saturation current as a function of v gs(off) 0 0.5 ?1 1.5 ?2 500 400 300 200 100 drain saturation current in ma transconductance in ms g fs as a function of i dss 0 100 200 300 400 250 200 150 100 gate source cutoff voltage in volts transconductance in ms g fs as a function of v gs(off) 0 0.4 ?0.8 ?1.2 ?1.6 200 150 100 50 drain current in ma drain saturation current in ma gate source voltage in volts input capacitance as a function of v gs 0 4 8 12 ?16 1000 800 600 400 200 input capacitance in pf v dg = 10 v, i d = 20 ma v dg = 10 v, i d = 20 ma v dg = v 10 100 1k 10k 100k 0.6 0.4 0.2 frequency in hz noise as a function of frequency v dg = 3 v i d = 5 ma noise voltage in nv/ hz databook.fxp 1/13/99 2:09 pm page f-49
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