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features ? access time: 70, 100, and 120 ns ? cmos low power operation ? ttl compatible interface levels ? single 2.7v-3.6v power supply ? fully static operation: no clock or refresh required ? three state outputs ? data control for upper and lower bytes ? industrial temperature available ? available in jedec std 44-pin soj package, 44-pin tsop (type ii), and 48-pin mini bga is62v6416bl/ll 64k x 16 low voltage, ultra low power cmos static ram description the issi is62v6416bl/ll is an ultra-low power, 1,048,576- bit static ram organized as 65,536 words by 16 bits. it is fabricated using issi 's high-performance cmos technology. this highly reliable process coupled with innovative circuit design techniques yields access times as fast as 70 ns with low power consumption. when cs is high (deselected) or when cs is low and both lb and ub are high, the device assumes a standby mode at which the power dissipation can be reduced down with cmos input levels. easy memory expansion is provided by using chip select and output enable inputs, cs and oe . the active low write enable ( we ) controls both writing and reading of the memory. a data byte allows upper byte ( ub ) and lower byte ( lb ) access. functional block diagram advance information may 1999 the specification contains advance information. issi reserves the right to make changes to its products at any time without not ice in order to improve design and supply the best possible product. we assume no responsibility for any errors which may appear in this publication. ? copyright 1999, integrated silico n solution, inc. a0-a15 cs oe we 64k x 16 memory array decoder column i/o control circuit gnd vcc i/o data circuit i/o0-i/o7 lower byte i/o8-i/o15 upper byte ub lb issi ? integrated silicon solution, inc. 1-800-379-4774 1 advance information sr059-0a 05/12/99
is62v6416bl/ll 2 integrated silicon solution, inc. 1-800-379-4774 advance information sr059-0a 05/12/99 issi ? pin descriptions a0-a15 address inputs i/o0-i/o15 data inputs/outputs cs chip enable input oe output enable input we write enable input lb lower-byte control (i/o0-i/o7) ub upper-byte control (i/o8-i/o15) nc no connection vcc power gnd ground 48-pin mini bga (top view) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 a4 a3 a2 a1 a0 cs i/o0 i/o1 i/o2 i/o3 vcc gnd i/o4 i/o5 i/o6 i/o7 we a15 a14 a13 a12 nc a5 a6 a7 oe ub lb i/o15 i/o14 i/o13 i/o12 gnd vcc i/o11 i/o10 i/o9 i/o8 nc a8 a9 a10 a11 nc 44-pin tsop pin configurations 44-pin soj 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 a4 a3 a2 a1 a0 cs i/o0 i/o1 i/o2 i/o3 vcc gnd i/o4 i/o5 i/o6 i/o7 we a15 a14 a13 a12 nc a5 a6 a7 oe ub lb i/o15 i/o14 i/o13 i/o12 gnd vcc i/o11 i/o10 i/o9 i/o8 nc a8 a9 a10 a11 nc 1 2 3 4 5 6 a b c d e f g h lb oe a0 a1 a2 n/c ub a3 a4 cs i/o 0 a5 a6 gnd nc a7 vcc vcc nc nc gnd i/o 14 i/o 15 i/o 13 i/o 12 i/o 11 i/o 10 i/o 1 i/o 3 i/o 2 i/o 5 i/o 4 i/o 6 i/o 7 i/o 9 i/o 8 a14 a15 nc a12 a13 we nc a8 a9 a10 a11 nc
is62v6416bl/ll integrated silicon solution, inc. 1-800-379-4774 3 advance information sr059-0a 05/12/99 1 2 3 4 5 6 7 8 9 10 11 12 issi ? truth table i/o pin mode we we we we we cs cs cs cs cs oe oe oe oe oe lb lb lb lb lb ub ub ub ub ub i/o0-i/o7 i/o8-i/o15 vcc current not selected x h x x x high-z high-z i sb 1 , i sb 2 x l x h h high-z high-z i sb 1 , i sb 2 output disabled h l h l l high-z high-z i cc read h l l l h d out high-z i cc h l l h l high-z d out hllll d out d out write l l x l h d in high-z i cc l l x h l high-z d in llxll d in d in ac test loads figure 1. ac test conditions parameter unit input pulse level 0 to 3v (1) input rise and fall times 5 ns input and output timing and reference level 1.5v (1) output load see figures 1 and 2 1076 w 30 pf including jig and scope 1262 w output 3v 1076 w 5 pf including jig and scope 1262 w output 3v figure 2. figure 3. 581 w thevenin equivalent output 1.61v
is62v6416bl/ll 4 integrated silicon solution, inc. 1-800-379-4774 advance information sr059-0a 05/12/99 issi ? operating range range ambient temperature v cc commercial 0 c to +70 c 2.7v (min.) to 3.6v (max.) industrial C40 c to +85 c 2.7v (min.) to 3.6v (max.) dc electrical characteristics (over operating range unless otherwise specified) symbol parameter test conditions min. max. unit v oh output high voltage v cc = min., i oh = C1 ma 2.2 v v ol output low voltage v cc = min., i ol = 2.1 ma 0.4 v v ih input high voltage 2.0 v cc + 0.3 v v il (1) input low voltage C0.2 0.4 v i li input leakage gnd v in v cc C1 1 m a i lo output leakage gnd v out v cc , outputs disabled C1 1 m a note: 1. v il (min.) = C1.5v for pulse width less than 30 ns. absolute maximum ratings (1) symbol parameter value unit v term terminal voltage with respect to gnd C0.5 to vcc +0.5 v t stg storage temperature C65 to +150 c p t power dissipation 1.5 w i out dc output current (low) 20 ma note: 1. stress greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec- tions of this specification is not im- plied. exposure to absolute maximum rating conditions for extended periods may affect reliability.
is62v6416bl/ll integrated silicon solution, inc. 1-800-379-4774 5 advance information sr059-0a 05/12/99 1 2 3 4 5 6 7 8 9 10 11 12 issi ? is62v6416bl: power supply characteristics (1) (over operating range unless otherwise specified) -70 -100 -120 symbol parameter test conditions min. max. min. max. min. max. unit i cc vcc dynamic v cc = max., com. 50 35 30 ma operating i out = 0 ma, f = f max ind. 65 45 40 supply current cs = v ih i sb 1 ttl standby v cc = max., com. 0.3 0.3 0.3 ma current v in = v ih or v il ind. 0.3 0.3 0.3 (ttl inputs) cs 3 v ih , f = 0 or ulb control v cc = max., v in = v ih or v il cs = v il , f = 0, ub = v ih , lb = v ih i sb 2 cmos standby v cc = max., com. 15 15 15 m a current cs 3 v cc C 0.2v ind. 15 15 15 (cmos inputs) v in 0.2v, f = 0 or ulb control v cc = max., cs = v il v in 0.2v, f = 0; ub / lb = v cc C 0.2v is62v6416bll: power supply characteristics (1) (over operating range unless otherwise specified) -70 -100 -120 symbol parameter test conditions min. max. min. max. min. max. unit i cc vcc dynamic v cc = max., com. 50 35 30 ma operating i out = 0 ma, f = f max ind. 65 45 40 supply current cs = v ih i sb 1 ttl standby v cc = max., com. 0.3 0.3 0.3 ma current v in = v ih or v il ind. 0.3 0.3 0.3 (ttl inputs) cs 3 v ih , f = 0 or ulb control v cc = max., v in = v ih or v il cs = v il , f = 0, ub = v ih , lb = v ih i sb 2 cmos standby v cc = max., com. 5 5 5 m a current cs 3 v cc C 0.2v ind. 5 5 5 (cmos inputs) v in 0.2v, f = 0 or ulb control v cc = max., cs = v il v in 0.2v, f = 0; ub / lb = v cc C 0.2v note: 1. at f = f max , address and data inputs are cycling at the maximum frequency; f = 0 means no input lines change.
is62v6416bl/ll 6 integrated silicon solution, inc. 1-800-379-4774 advance information sr059-0a 05/12/99 issi ? read cycle switching characteristics (1) (over operating range) -70 -100 -120 symbol parameter min. max. min. max. min. max. unit t rc read cycle time 70 100 120 ns t aa address access time 70 100 120 ns t oha output hold time 10 10 15 ns t acs cs access time 70 100 120 ns t doe oe access time 40 50 70 ns t hzoe (2) oe to high-z output 0 25 0 30 0 35 ns t lzoe (2) oe to low-z output 5 5 5 ns t hzcs (2) cs to high-z output 0 25 0 30 0 35 ns t lzcs (2) cs to low-z output 5 10 10 ns t ba lb , ub access time 70 100 120 ns t hzb (2) lb , ub to high-z output 0 30 0 40 0 45 ns t lzb (2) lb , ub to low-z output 10 10 10 ns capacitance (1) symbol parameter conditions max. unit c in input capacitance v in = 0v 8 pf c out input/output capacitance v out = 0v 10 pf note: 1. tested initially and after any design or process changes that may affect these parameters. notes: 1. test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5v, input pulse levels of 0 to 3v and output loading specified in figure 1. 2. tested with the load in figure 2. transition is measured 500mv from steady-state voltage. not 100% tested.
is62v6416bl/ll integrated silicon solution, inc. 1-800-379-4774 7 advance information sr059-0a 05/12/99 1 2 3 4 5 6 7 8 9 10 11 12 issi ? data valid read1.eps previous data valid t aa t oha t oha t rc d out address t rc t oha t aa t doe t lzoe t acs t lzcs t hzoe high-z data valid t hzb address oe cs lb, ub d out t hzcs t ba t lzb ub_csrd2.eps read cycle no. 2 (1,3) ( cs , oe , and ub / lb controlled) ac waveforms read cycle no. 1 (1,2) (address controlled) ( cs = oe = v il , ub or lb = v il ) notes: 1. we is high for a read cycle. 2. the device is continuously selected. oe , cs , ub , or lb = v il . 3. address is valid prior to or coincident with cs low transition.
is62v6416bl/ll 8 integrated silicon solution, inc. 1-800-379-4774 advance information sr059-0a 05/12/99 issi ? write cycle switching characteristics (1,2) (over operating range) -70 -100 -120 symbol parameter min. max. min. max. min. max. unit t wc write cycle time 70 100 120 ns t scs cs to write end 60 80 100 ns t aw address setup time to write end 60 80 100 ns t ha address hold from write end 0 0 0 ns t sa address setup time 0 0 0 ns t pwb lb , ub valid to end of write 60 80 100 ns t pwe 1,2 we pulse width 60 80 100 ns t sd data setup to write end 40 50 60 ns t hd data hold from write end 0 0 0 ns t hzwe (3) we low to high-z output 0 25 0 30 0 ns t lzwe (3) we high to low-z output 5 5 5 ns notes: 1. test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5v, input pulse levels of 0 to 3v and output loading specified in figure 1. 2. the internal write time is defined by the overlap of cs low and ub or lb , and we low. all signals must be in valid states to initiate a write, but any one can go inactive to terminate the write. the data input setup and hold timing are referenced to the rising or falling edge of the signal that terminates the write. 3. tested with the load in figure 2. transition is measured 500 mv from steady-state voltage. data retention characteristics (l/ll) symbol parameter test condition min. max. unit v dr vcc for data retention cs 3 v cc C 0.2v 2.0 v i dr data retention current v cc = v dr 5.0 m a cs 3 v cc C 0.2v t sdr data retention set up time see data retention waveform 0 ns t rdr recovery time see data retention waveform t rc ns data retention timing diagram v cc cs 3 v cc ?0.2v t sdr t rdr v dr cs gnd data retention mode cs_dr.eps
is62v6416bl/ll integrated silicon solution, inc. 1-800-379-4774 9 advance information sr059-0a 05/12/99 1 2 3 4 5 6 7 8 9 10 11 12 issi ? notes: 1. write is an internally generated signal asserted during an overlap of the low states on the cs and we inputs and at least one of the lb and ub inputs being in the low state. 2. write = ( cs ) [ ( lb ) = ( ub ) ] ( we ). ac waveforms write cycle no. 1 (1,2) ( cs controlled, oe = high or low) data undefined t wc valid address t scs t pwe1 t pwe2 t aw t ha high-z t pbw t hd t sa t hzwe address cs ub, lb we d out d in data in valid t lzwe t sd ub_cswr1.eps
is62v6416bl/ll 10 integrated silicon solution, inc. 1-800-379-4774 advance information sr059-0a 05/12/99 issi ? write cycle no. 2 ( we controlled: oe is high during write cycle) data undefined low t wc valid address t pwe1 t aw t ha high-z t pbw t hd t sa t hzwe address cs ub, lb we d out d in oe data in valid t lzwe t sd ub_cswr2.eps write cycle no. 3 ( we controlled: oe is low during write cycle) data undefined t wc valid address low low t pwe2 t aw t ha high-z t pbw t hd t sa t hzwe address cs ub, lb we d out d in oe data in valid t lzwe t sd ub_cswr3.eps
is62v6416bl/ll integrated silicon solution, inc. 1-800-379-4774 11 advance information sr059-0a 05/12/99 1 2 3 4 5 6 7 8 9 10 11 12 issi ? write cycle no. 4 ( ub / lb controlled) data undefined t wc address 1 address 2 t wc high-z t pbw word 1 low word 2 t hd t sa t hzwe address cs ub, lb we d out d in oe data in valid t lzwe t sd t pbw data in valid t sd t hd t sa t ha t ha ub_cswr4.eps
is62v6416bl/ll 12 integrated silicon solution, inc. 1-800-379-4774 advance information sr059-0a 05/12/99 issi ? is62v6416bl: ordering information commercial range: 0 c to +70 c speed (ns) order part no. package 70 is62v6416bl-70t plastic tsop (type ii) is62v6416bl-70k 400-mil plastic soj is62v6416bl-70b mini bga (6mm x 8mm) 100 is62v6416bl-10t plastic tsop (type ii) is62v6416bl-10k 400-mil plastic soj is62v6416bl-10b mini bga (6mm x 8mm) 120 is62v6416bl-12t plastic tsop (type ii) is62v6416bl-12k 400-mil plastic soj is62v6416bl-12b mini bga (6mm x 8mm) is62v6416bl: ordering information industrial range: C40 c to +85 c speed (ns) order part no. package 70 is62v6416bl-70ti plastic tsop (type ii) is62v6416bl-70ki 400-mil plastic soj is62v6416bl-70bi mini bga (6mm x 8mm) 100 is62v6416bl-10ti plastic tsop (type ii) is62v6416bl-10ki 400-mil plastic soj is62v6416bl-10bi mini bga (6mm x 8mm) 120 is62v6416bl-12ti plastic tsop (type ii) is62v6416bl-12ki 400-mil plastic soj is62v6416BL-12BI mini bga (6mm x 8mm) issi ? integrated silicon solution, inc. 2231 lawson lane santa clara, ca 95054 tel: 1-800-379-4774 fax: (408) 588-0806 e-mail: sales@issi.com www.issi.com is62v6416bll: ordering information commercial range: 0 c to +70 c speed (ns) order part no. package 70 is62v6416bll-70t plastic tsop (type ii) is62v6416bll-70k 400-mil plastic soj is62v6416bll-70b mini bga (6mm x 8mm) 100 is62v6416bll-10t plastic tsop (type ii) is62v6416bll-10k 400-mil plastic soj is62v6416bll-10b mini bga (6mm x 8mm) 120 is62v6416bll-12t plastic tsop (type ii) is62v6416bll-12k 400-mil plastic soj is62v6416bll-12b mini bga (6mm x 8mm) is62v6416bll: ordering information industrial range: C40 c to +85 c speed (ns) order part no. package 70 is62v6416bll-70ti plastic tsop (type ii) is62v6416bll-70ki 400-mil plastic soj is62v6416bll-70bi mini bga (6mm x 8mm) 100 is62v6416bll-10ti plastic tsop (type ii) is62v6416bll-10ki 400-mil plastic soj is62v6416bll-10bi mini bga (6mm x 8mm) 120 is62v6416bll-12ti plastic tsop (type ii) is62v6416bll-12ki 400-mil plastic soj is62v6416bll-12bi mini bga (6mm x 8mm)

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